BCX38A/B/C VCE=5V IC/IB=100 hFE - Normalised Gain VCE(sat) - (Volts) 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.1 1 +100°C 1.4 C B E 1.2 1.0 +25°C 0.8 0.4 ABSOLUTE MAXIMUM RATINGS. -55°C 0.2 10 0.001 IC - Collector Current (Amps) 0.01 0.1 VCE(sat) v IC hFE v IC VCE=5V IC/IB=100 2.0 -55°C VBE - (Volts) VBE(sat) - (Volts) 10 1 IC - Collector Current (Amps) 2.0 1.5 +25°C +100°C 1.0 -55°C 0.01 0.1 1 0.5 0.001 10 IC - Collector Current (Amps) Thermal Resistance (°C/W) D=0.5 50 D=0.2 0 0.0001 D=0.1 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 0.01 1 Maximum transient thermal impedance V 10 V Peak Pulse Current ICM 2 A 800 mA 1 W -55 to +200 °C Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg IC=10µ A, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 60 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA* Base-Emitter Turn-on Voltage VBE(on) 1.8 V IC=800mA, VCE=5V* +175°C 0.01 0.1 1 10 Single Pulse Test at Tamb=25°C D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-21 60 VEBO V 100 Pulse Width (seconds) VCEO Emitter-Base Voltage 80 1 0.1 Collector-Emitter Voltage V(BR)CBO VBE(on) v IC 100 V Collector-Base Breakdown Voltage VBE(sat) v IC 150 UNIT 80 +100°C IC - Collector Current (Amps) 10 VALUE VCBO PARAMETER IC - Collector Current (Amps) D=1 (D.C.) SYMBOL Collector-Base Voltage +25°C +175°C 0.001 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.5 1.0 0.5 E-Line TO92 Compatible 0.6 0 0.01 BCX38A/B/C ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.0 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 1000 Static Forward Current Transfer Ratio BCX38A SYMBOL hFE MIN. TYP. MAX. UNIT CONDITIONS. 500 1000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* BCX38B 2000 4000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* BCX38C 5000 10000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* 3-20 BCX38A/B/C VCE=5V IC/IB=100 hFE - Normalised Gain VCE(sat) - (Volts) 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.1 1 +100°C 1.4 C B E 1.2 1.0 +25°C 0.8 0.4 ABSOLUTE MAXIMUM RATINGS. -55°C 0.2 10 0.001 IC - Collector Current (Amps) 0.01 0.1 VCE(sat) v IC hFE v IC VCE=5V IC/IB=100 2.0 -55°C VBE - (Volts) VBE(sat) - (Volts) 10 1 IC - Collector Current (Amps) 2.0 1.5 +25°C +100°C 1.0 -55°C 0.01 0.1 1 0.5 0.001 10 IC - Collector Current (Amps) Thermal Resistance (°C/W) D=0.5 50 D=0.2 0 0.0001 D=0.1 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 0.01 1 Maximum transient thermal impedance V 10 V Peak Pulse Current ICM 2 A 800 mA 1 W -55 to +200 °C Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg IC=10µ A, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 60 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 10 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=60V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.25 V IC=800mA, IB=8mA* Base-Emitter Turn-on Voltage VBE(on) 1.8 V IC=800mA, VCE=5V* +175°C 0.01 0.1 1 10 Single Pulse Test at Tamb=25°C D.C. 1s 100ms 10ms 1.0ms 0.1ms 10 100 VCE - Collector Voltage (Volts) Safe Operating Area 3-21 60 VEBO V 100 Pulse Width (seconds) VCEO Emitter-Base Voltage 80 1 0.1 Collector-Emitter Voltage V(BR)CBO VBE(on) v IC 100 V Collector-Base Breakdown Voltage VBE(sat) v IC 150 UNIT 80 +100°C IC - Collector Current (Amps) 10 VALUE VCBO PARAMETER IC - Collector Current (Amps) D=1 (D.C.) SYMBOL Collector-Base Voltage +25°C +175°C 0.001 PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1.5 1.0 0.5 E-Line TO92 Compatible 0.6 0 0.01 BCX38A/B/C ISSUE 1 MARCH 94 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt TYPICAL CHARACTERISTICS 1.0 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS 1000 Static Forward Current Transfer Ratio BCX38A SYMBOL hFE MIN. TYP. MAX. UNIT CONDITIONS. 500 1000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* BCX38B 2000 4000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* BCX38C 5000 10000 IC=100mA, VCE=5V* IC=500mA, VCE=5V* 3-20 Maximum Power Dissipation - (W) BCX38A/B/C The maximum permissable operational temperature can be obtained using the equation: 1.0 RS≤10kΩ T amb (max ) = RS=47kΩ 0.8 RS=1MΩ 0.6 0.2 1 10 Tamb(max)= Maximum operating ambient temperature Power (max) = Maximum power dissipation figure, for a given VCE and source resistance (RS) RS= ∞ 0.4 Power (max ) −Power (actual ) + 25° C 0.0057 100 Power (actual) = Actual power dissipation in users circuit VCE - Collector-Emitter Voltage - (V) 3-22