isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE BDT63 60 BDT63A 80 BDT63B 100 BDT63C 120 BDT63 60 BDT63A 80 BDT63B 100 BDT63C 120 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A 0.25 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.39 ℃/W isc Website：www.iscsemi.cn BDT63/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 Collector-Emitter Breakdown Voltage TYP. MAX UNIT 60 BDT63A V(BR)CEO MIN 80 IC= 30mA ;IB=0 V B BDT63B 100 BDT63C 120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA 2.5 V Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VECF C-E Diode Forward Voltage IF= 3A 2.0 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 0.5 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TC= 150℃ 0.2 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 mA hFE-1 DC Current Gain IC= 3A ; VCE= 3V hFE-2 DC Current Gain IC= 10A ; VCE= 3V 3000 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1MHz 100 VBE(on) B B 1000 pF Switching times ton Turn-On Time toff Turn-Off Time isc Website：www.iscsemi.cn IC= 3A; IB1= -IB2= 12mA; VCC= 10V 2 1.0 2.5 μs 5.0 10 μs