TSC BZT52B2V4S 200mw, 2% tolerance smd zener diode Datasheet

BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
SOD-323F
B
C
Features
A
—Wide zener voltage range selection : 2.4V to 75V
—VZ Tolerance Selection of ±2%
D
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
E
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
F
Dimensions
Mechanical Data
Unit (mm)
Unit (inch)
Min
Max
Min
Max
—Case : Flat lead SOD-323 small outline plastic package
A
1.15
1.35
0.045 0.053
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
2.30
2.70
0.091
0.106
C
0.25
0.40
0.010
0.016
—High temperature soldering guaranteed: 260°C/10s
D
1.60
1.80
0.063 0.071
—Polarity : Indicated by cathode band
E
0.80
1.00
0.031 0.039
—Weight : 4.02±0.5 mg
F
0.05
0.20
0.002 0.008
Ordering Information
Part No.
Package
Packing
BZT52BxxS RR
SOD-323F
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Forward Voltage
IF=10mA
Thermal Resistance (Junction to Ambient)
(Note 1)
Junction and Storage Temperature Range
Symbol
Value
Units
PD
200
mW
VF
1
V
RθJA
625
°C/W
TJ, TSTG
-65 to + 150
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Current
IF
VZM VZ VBR
VR
IR
IZK
VF
Voltage
IZT
IZM
BreakdownRegion
Leakage Region
Forward Region
VBR
: Voltage at IZK
IZK
: Test current for voltage VBR
ZZK
: Dynamic impedance at IZK
IZT
: Test current for voltage VZ
VZ
: Voltage at current IZT
ZZT
: Dynamic impedance at IZT
IZM
: Maximum steady state current
VZM
: Voltage at IZM
Version : B09
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Voltage = 1V Maximum @ I F = 10 mA for all part numbers
Part Number
VZ @ IZT (Volt)
Nom
Min
Max
IZT(mA)
ZZT @ IZT(Ω)
Max
IZK(mA)
ZZK @ IZK(Ω) IR @ VR(μA)
Max
Max
VR(V)
BZT52B2V4S
2.35
2.4
2.45
5
100
1
564
45
BZT52B2V7S
2.65
2.7
2.75
5
100
1
564
18
1
1
BZT52B3V0S
2.94
3
3.06
5
100
1
564
9
1
BZT52B3V3S
3.23
3.3
3.37
5
95
1
564
4.5
1
BZT52B3V6S
3.53
3.6
3.67
5
90
1
564
4.5
1
BZT52B3V9S
3.82
3.9
3.98
5
90
1
564
2.7
1
BZT52B4V3S
4.21
4.3
4.39
5
90
1
564
2.7
1
BZT52B4V7S
4.61
4.7
4.79
5
80
1
470
2.7
2
BZT52B5V1S
5
5.1
5.2
5
60
1
451
1.8
2
BZT52B5V6S
5.49
5.6
5.71
5
40
1
376
0.9
2
BZT52B6V2S
6.08
6.2
6.32
5
10
1
141
2.7
4
BZT52B6V8S
6.66
6.8
6.94
5
15
1
75
1.8
4
BZT52B7V5S
7.35
7.5
7.65
5
15
1
75
0.9
5
BZT52B8V2S
8.04
8.2
8.36
5
15
1
75
0.63
5
BZT52B9V1S
8.92
9.1
9.28
5
15
1
94
0.45
6
BZT52B10S
9.8
10
10.2
5
20
1
141
0.18
7
BZT52B11S
10.78
11
11.22
5
20
1
141
0.09
8
BZT52B12S
11.76
12
12.24
5
25
1
141
0.09
8
BZT52B13S
12.74
13
13.26
5
30
1
160
0.09
8
BZT52B15S
14.7
15
15.3
5
30
1
188
0.045
10.5
BZT52B16S
15.68
16
16.32
5
40
1
188
0.045
11.2
BZT52B18S
17.64
18
18.36
5
45
1
212
0.045
12.6
BZT52B20S
19.60
20
20.40
5
55
1
212
0.045
14.0
BZT52B22S
21.56
22
22.44
5
55
1
235
0.045
15.4
BZT52B24S
23.52
24
24.48
5
70
1
235
0.045
16.8
BZT52B27S
26.46
27
27.54
2
80
0.5
282
0.045
18.9
BZT52B30S
29.40
30
30.60
2
80
0.5
282
0.045
21.0
BZT52B33S
32.34
33
33.66
2
80
0.5
306
0.045
23.0
BZT52B36S
35.28
36
36.72
2
90
0.5
329
0.045
25.2
BZT52B39S
38.22
39
39.78
2
130
0.5
329
0.045
27.3
BZT52B43S
42.14
43
43.86
2
150
0.5
353
0.045
30.1
BZT52B47S
46.06
47
47.94
2
170
0.5
353
0.045
33.0
BZT52B51S
49.98
51
52.02
2
180
0.5
376
0.045
35.7
BZT52B56S
54.88
56
57.12
2
200
0.5
400
0.045
39.2
BZT52B62S
60.76
62
63.24
2
215
0.5
423
0.045
43.4
BZT52B68S
66.64
68
69.36
2
240
0.5
447
0.045
47.6
BZT52B75S
73.50
75
76.50
2
255
0.5
470
0.045
52.5
Notes:
1. The Zener Voltage (V Z) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest Taiwan semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value
equal to 10% of the DC zener current (I ZT or IZK) is superimposed to I ZT or IZK.
Version : B09
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Zener Breakdown Characteristics
FIG 1 Typical Forward Characteristics
100
Zener Current (mA)
Forward Current (mA)
1000
100
Ta=25°C
10
Ta=25°C
10
1
0.10
1
0.01
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
1
2
3
Forward Voltage (V)
6
7
8
9
10
11
12
FIG 4 Admissible Power Disspation Curve
FIG 3 Zener Breakdown Characteristics
Power Dissipation (mW)
300
10
Zener Current (mA)
5
Zener Voltage (V)
100
1
0
250
200
150
100
50
0
0
15
25
35
45
55
65
0
75
50
Zener Voltage (V)
100
150
200
Ambient Tempeture (°C)
FIG 5 Typical Capacitance
FIG 6 Effect of Zener Voltage on Impedence
1000
1000
100
Dynamic Impedence (Ώ)
Capacitance(pF)
4
100
1V Bias
Ta=150°C
10
Bias at 50% of VZ(Nom)
Iz=1mA
Ta=25°C
Iz=5mA
10
Iz=20m
1
1
1
10
Zener Voltage (V)
100
1
10
100
Zener Voltage (V)
Version : B09
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