BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD240 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD239A Collector-emitter voltage (RBE = 100 Ω) BD239B VCER 90 BD239C 115 45 BD239B UNIT 70 BD239 BD239A Collector-emitter voltage (IC = 30 mA) VALUE 55 BD239 V CEO 60 80 V V 100 BD239C VEBO 5 V IC 2 A ICM 4 A IB 0.6 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 30 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 32 mJ °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) BD239 45 BD239A 60 BD239B 80 BD239C 100 TYP MAX V VCE = 55 V VBE = 0 BD239 0.2 Collector-emitter VCE = 70 V VBE = 0 BD239A 0.2 cut-off current VCE = 90 V VBE = 0 BD239B 0.2 VCE = 115 V VBE = 0 BD239C 0.2 Collector cut-off VCE = 30 V IB = 0 BD239/239A 0.3 current VCE = 60 V IB = 0 BD239B/239C 0.3 VEB = 5V IC = 0 Forward current VCE = 4V IC = 0.2 A transfer ratio VCE = 4V IC = 1A 0.2 A IC = 1A 4V IC = 1A Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IB = VCE = UNIT mA mA 1 µA (see Notes 5 and 6) 0.7 V (see Notes 5 and 6) 1.3 V 40 (see Notes 5 and 6) 15 VCE = 10 V IC = 0.2 A f = 1 kHz 20 VCE = 10 V IC = 0.2 A f = 1 MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 4.17 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 200 mA IB(on) = 20 mA IB(off) = -20 mA 0.3 µs toff Turn-off time VBE(off) = -3.4 V RL = 150 Ω tp = 20 µs, dc ≤ 2% 0.8 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 4 V tp = 300 µs, duty cycle < 2% TC = 25°C TC = 80°C 100 10 0·01 0·1 IC = 100 mA IC = 300 mA IC = 1 A 1·0 0·1 0·01 0·1 1·0 TCS631AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V TCS631AG 1000 hFE - DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC - Collector Current - A 1·0 10 100 1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·0 TCS631AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 0·9 0·8 0·7 0·6 0·5 0·01 0·1 1·0 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS631AE tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1·0 0·1 BD239 BD239A BD239B BD239C 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AB Ptot - Maximum Power Dissipation - W 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MDXXBE 5