FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). • –8.8 A, –30 V Applications • Fast switching speed • Power management • High performance trench technology for extremely low RDS(ON) RDS(ON) = 20 mΩ @ V GS = –10 V RDS(ON) = 35 mΩ @ V GS = –4.5 V • Low gate charge (17nC typical) • Load switch • Battery protection • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 G G S SS S SS Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –30 V V GSS Gate-Source Voltage ±25 V ID Drain Current –8.8 A – Continuous (Note 1a) – Pulsed PD –50 Power Dissipation for Single Operation TJ , TSTG (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Junction Temperature Range W –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4435 FDS4435 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS4435 Rev F1(W) FDS4435 October 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –24 V, V GS = 0 V –1 µA IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse V GS = 25 V, V GS = –25 V, V DS = 0 V V DS = 0 V 100 –100 nA nA –3 V On Characteristics –30 ID = –250 µA, Referenced to 25°C V –21 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –10 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –8.8 A 24 S V DS = –15 V, f = 1.0 MHz V GS = 0 V, 1604 pF 408 pF 202 pF –1 –1.7 5 V GS = –10 V, ID = –8.8 A V GS = –4.5 V, ID = –6.7 A V GS = –10 V, ID = –8.8A, TJ =125°C 15 22 19 mV/°C 20 35 32 –50 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) V DD = –15 V, V GS = –10 V, V DS = –15 V, V GS = –5 V ID = –1 A, RGEN = 6 Ω ID = –8.8 A, 13 23 ns 13.5 24 ns 42 68 ns 25 40 ns 17 24 nC 5 nC 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = –2.1 A Voltage (Note 2) –0.73 –2.1 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS4435 Rev F1(W) FDS4435 Electrical Characteristics FDS4435 Typical Characteristics 2 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V 40 -4.5V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 -4.0V 30 -3.5V 20 -3.0V 10 0 V GS=-4.5V 1.8 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -7.0V -8.0V -10V 1 0.8 0 1 2 3 0 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 50 0.07 ID = -8.8A V GS = -10V ID = -4.4A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 0.06 0.05 0.04 TA = 125 oC 0.03 0.02 T A = 25o C 0.01 -50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) T J, JUNCTION TEMPERATURE ( oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V DS = -5V o T A = -55 C -IS , REVERSE DRAIN CURRENT (A) 40 -I D, DRAIN CURRENT (A) 20 -I D, DRAIN CURRENT (A) 25o C 30 125oC 20 10 0 1.5 2 2.5 3 3.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 V GS =0V 10 T A = 125o C 1 25o C 0.1 -55o C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4435 Rev F1(W) FDS4435 Typical Characteristics 2500 V DS = -5V ID = -8.8A f = 1 MHz V GS = 0 V -10V 8 2000 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 1500 1000 COSS 500 CRSS 0 0 0 6 12 18 24 30 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) 100µ s 1ms 10ms 10 100ms 1s 1 10s DC V GS = -10V SINGLE PULSE Rθ JA = 125o C/W 0.1 T A = 25o C 0.01 0.1 1 10 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 100 0.01 -V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA o 0.2 0.1 RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4435 Rev F1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4