BLC573 HF / VHF power LDMOS transistor Rev. 01 — 11 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation CW f VDS PL Gp ηD (MHz) (V) (W) (dB) (%) 225 50 300 26.5 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: u Average output power = 300 W u Power gain = 26.5 dB u Efficiency = 70 % n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (HF and VHF band) n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n Industrial, scientific and medical applications n Broadcast transmitter applications BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLC573 Package Name Description Version - plastic flanged cavity package; 2 mounting slots; 2 leads SOT895A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 110 V VGS gate-source voltage −0.5 +11 V ID drain current - 42 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 300 W [1] Typ Unit 0.21 K/W Rth(j-c) is measured under RF conditions. BLC573_1 Preliminary data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 2 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 6. Characteristics Table 6. DC characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA Min Typ Max Unit 110 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 375 mA 1.25 1.7 2.25 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 900 mA 1.45 1.95 2.45 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 4.2 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 44 56 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 18.75 A - 20 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 12.49 A - 0.09 - Ω Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 2.3 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 300 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 103 - pF Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 300 W 25 26.5 28 dB RLin input return loss PL = 300 W 10 13 - dB ηD drain efficiency PL = 300 W 67 70 - % BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 3 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj155 800 Coss (pF) 600 400 200 0 0 10 20 30 40 50 VDS (V) VGS = 0 V; f = 1 MHz. Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching 6.1 Ruggedness in class-AB operation The BLC573 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W; f = 225 MHz. 7. Application information 7.1 Impedance information Table 8. Typical impedance Measured ZS and ZL test circuit impedances. f ZS ZL MHz Ω Ω 225 0.7 + j2.0 1.95 + j2.0 drain ZL gate ZS 001aaf059 Fig 2. Definition of transistor impedance BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 4 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 7.2 Reliability 001aaj156 105 Years 104 (1) (2) (3) (4) (8) (9) (10) (11) (5) (6) 103 102 10 (7) 1 0 4 8 12 16 20 Idc (A) TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C Fig 3. BLC573 electromigration (ID, total device) BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 5 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aaj157 30 Gp (dB) ηD (%) ηD 28 Gp 26 001aaj158 30 80 Gp (dB) 60 28 40 26 (7) (6) (5) (1) (2) (3) (4) 24 24 20 22 0 100 200 0 400 300 22 0 100 200 PL (W) 300 400 PL (W) VDS = 50 V; IDq = 900 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA Fig 4. Power gain and drain efficiency as functions of load power; typical values Fig 5. Power gain as function of load power; typical values BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 6 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 001aaj159 60 PL (dBm) ideal PL 58 (2) 56 (1) PL 54 52 50 24 26 28 30 32 34 Pi (dBm) VDS = 50 V; IDq = 900 mA; f = 225 MHz. (1) PL(1dB) = 55.2 dBm (331 W) (2) PL(3dB) = 55.8 dBm (380 W) Fig 6. Load power as function of input power; typical values BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 7 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 8.1.2 2-Tone CW 001aaj160 30 Gp (dB) ηD (%) ηD 28 26 Gp 24 22 0 100 200 300 001aaj161 0 80 IMD3 (dBc) 60 −20 40 −40 20 −60 (1) (2) (3) (4) (5) (6) (7) (8) −80 0 400 500 PL(PEP) (W) 0 VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz; f2 = 225.05 MHz. 100 200 300 400 500 PL(PEP) (W) VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 500 mA (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA (8) IDq = 1800 mA Fig 7. Power gain and drain efficiency as functions of peak envelope load power; typical values Fig 8. Third order intermodulation distortion as a function of peak envelope load power; typical values 8.2 Test circuit Table 9. List of components For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 mm. Component Description Value B1 ferrite SMD bead 100 Ω; 100 MHz Remarks Ferroxcube BDS3/3/8.9-4S2 or equivalent C1 multilayer ceramic chip capacitor 100 pF [1] C2 multilayer ceramic chip capacitor 39 pF [1] C3, C4 multilayer ceramic chip capacitor 180 pF [1] C5, C6, C7 multilayer ceramic chip capacitor 220 pF [1] C8 multilayer ceramic chip capacitor 4.7 µF TDK C4532X7R1E475MT020U or equivalent C9, C10, C20 multilayer ceramic chip capacitor 1 nF [1] C11 multilayer ceramic chip capacitor 30 pF [1] C12 electrolytic capacitor 220 µF; 63 V BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 8 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor Table 9. List of components …continued For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 mm. Component Description Value Remarks C13, C14, C15, C16 multilayer ceramic chip capacitor 47 pF [2] C17 multilayer ceramic chip capacitor 33 pF [1] C18 multilayer ceramic chip capacitor 36 pF [1] C19 multilayer ceramic chip capacitor 16 pF [1] L1 2 turns enamelled copper wire D = 3 mm; d = 1 mm; length = 2 mm; leads = 2 × 6 mm L2 4 turns enamelled copper wire D = 2 mm; d = 1 mm; length = 13 mm; leads = 2 × 5 mm R1 metal film resistor 100 Ω; 0.6 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 180R or capacitor of same quality. VDD VGG C12 C8 B1 C10 C9 C13 R1 input 50 Ω C3 C15 L1 output C6 L2 C1 C20 50 Ω C19 C2 C4 C5 C7 C11 C14 C16 C18 C17 001aaj162 Fig 9. Class-AB common-source production test circuit BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 9 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor B1 C12 C10 C8 C9 C3 C13 C15 C6 R1 L1 C1 C2 C4 C5 C20 L2 C7 C14 C11 C18 C16 C19 C17 12.2 mm Use isolated washer 16 mm 29 mm 28 mm 76 mm 001aaj163 Fig 10. Component layout for class-AB production test circuit BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 10 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 9. Package outline Plastic flanged cavity package; 2 mounting slots; 2 leads SOT895A D F A D1 U1 B q C c 1 L H w1 M A M p U2 B M E E1 3 A 2 w2 b 0 5 M C Q M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 mm 4.1 3.3 12.83 12.57 0.17 0.14 19.9 19.7 20.42 20.12 9.53 9.27 9.78 9.53 1.14 0.89 19.94 18.92 5.3 4.5 3.38 3.12 1.75 1.50 27.94 34.16 33.91 9.98 9.65 0.25 0.6 1.345 0.392 0.161 0.505 0.0065 0.785 0.804 0.375 0.385 0.045 0.785 0.209 0.133 0.069 1.100 1.335 0.380 0.130 0.495 0.0055 0.775 0.792 0.365 0.375 0.035 0.745 0.177 0.123 0.059 0.01 0.023 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-02-21 06-04-03 SOT895A Fig 11. Package outline SOT895A BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 11 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 10. Handling information 10.1 Moisture sensitivity Table 10. Moisture sensitivity level Test methodology Class IPC/JEDEC J-STD-020-D 3 11. Abbreviations Table 11. Abbreviations Acronym Description CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal-Oxide Semiconductor RF Radio Frequency SMD Surface Mount Device TTF Time To Failure VHF Very High Frequency VSWR Voltage Standing-Wave Ratio 12. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLC573_1 20081211 Preliminary data sheet - - BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 12 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLC573_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 11 December 2008 13 of 14 BLC573 NXP Semiconductors HF / VHF power LDMOS transistor 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 8 8.1 8.1.1 8.1.2 8.2 9 10 10.1 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 6 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Handling information. . . . . . . . . . . . . . . . . . . . 12 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2008 Document identifier: BLC573_1