Sony CXG1039TN High isolation absorptive spdt switch mmic with integrated control logic Datasheet

CXG1039TN
High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic
Description
The CXG1039TN is a high isolation absorptive
SPDT (Single Pole Dual Throw) switch MMIC used
in PCS handsets.
This IC is designed using the Sony’s GaAs J-FET
process and operates with CMOS input.
Features
• Absorptive type
• CMOS input control
• Low insertion loss 0.8 dB (Typ.) at 2.0 GHz
• High isolation
50 dB (Typ.) at 2.0 GHz
• Small Package
TSSOP-10pin
Applications
High isolation switch for digital cellular telephones
such as PCS handsets.
10 pin TSSOP (Plastic)
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage
VDD
7
V
• Control voltage
Vctl
5
V
• Input power
Pin
25
dBm
• Operating temperature Topr
–35 to +85
°C
• Storage temperature
Tstg
–65 to +150
°C
Structure
GaAs J-FET MMIC
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E99143-TE
CXG1039TN
Pin Configuration
Block Diagram
Unit : mm
RF1
1
10
CTL
RF3
GND
GND
RF1
RF2
RF3
SW1
SW2
SW3
SW4
50Ω
50Ω
GND
GND
GND
VDD
RF2
6
5
10pin TSSOP (PLASTIC)
Recommended Circuit
Rctl 1kΩ
CTL
1
10
C1 100pF
RF3
C2 100pF
2
9
Rrf 100kΩ
3
RF1
CXG1039TN
8
C2 100pF
VDD
4
7
5
6
C1 100pF
RF2
C2 100pF
When using the CXG1039TN, the following external components should be used:
C1: This is used for signal line filtering 100 pF is recommended.
C2: This is used for RF De-coupling and must be used in all applications. 100 pF is recommended.
Rctl: This is used to give improved ESD performance.
Rrf: This resistor is used to stabilize the dc operating point at high power levels. A value of 100 kΩ is
recommended.
—2—
CXG1039TN
Truth Table
CTL
H
L
RF1 - RF2 ON
RF1 - RF3 ON
SW1
ON
OFF
SW2
OFF
ON
SW3
OFF
ON
Operating Condition
Control voltage (High)
Control voltage (Low)
Bias voltage
SW4
ON
OFF
(Ta=–35 °C to +85 °C)
Symbol
Vctl (H)
Vctl (L)
VDD
Min.
2.5
0
2.7
Typ.
—3—
Max.
3.6
0.5
4
Unit.
V
V
V
CXG1039TN
Electrical Characteristics (1)
VDD=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50 Ω
Item
Insertion loss
Isolation
ON port VSWR
OFF port VSWR
3rd order input intercept point
Input power for 1 dBm compression
Switching speed
Bias current
Control current
∗1
Symbol
IL
ISO
VSWR (ON)
VSWR (OFF)
IP3
P1dB
TSW
IDD
ICRL
(Ta=25 °C)
Min.
40
35
12
Typ.
0.8
50
1.2
1.7
17
1
220
80
Max.
1.2
Unit
dB
dB
1.5
2.0
5
350
150
dBm
dBm
µs
µA
µA
∗1 two-tone input power up to 5 dBm
Electrical Characteristics (2)
VDD=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50 Ω
Item
Insertion loss
Isolation
ON port VSWR
OFF port VSWR
3rd order input intercept point
Input power for 1 dBm compression
Switching speed
Bias current
Control current
∗1
Symbol
IL
ISO
VSWR (ON)
VSWR (OFF)
IP3
P1dB
TSW
IDD
ICRL
∗1 two-tone input power up to 5 dBm
—4—
(Ta=–35 °C to +85 °C)
Min.
40
35
12
Typ.
0.8
50
1.2
1.7
17
1
220
80
Max.
1.4
Unit
dB
dB
1.5
2.0
5
450
180
dBm
dBm
µs
µA
µA
CXG1039TN
Unit : mm
10PIN TSSOP(PLASTIC)
1.2MAX
∗2.8 ± 0.1
0.1
10
6
+ 0.15
0.1 – 0.05
0.45 ± 0.15
3.2 ± 0.2
∗2.2 ± 0.1
5
1
0.5
+ 0.08
0.22 – 0.07
0.1
0.25
0° to 10°
M
A
(0.1)
+ 0.025
0.12 – 0.015
Package Outline
(0.2)
+ 0.08
0.22 – 0.07
DETAIL A
NOTE: Dimension “∗” does not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
LEAD MATERIAL
COPPER ALLOY
JEDEC CODE
PACKAGE MASS
0.02g
SONY CODE
TSSOP-10P-L01
—5—
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