AMMC-6442 37 - 40 GHz 1W Power Amplifier Data Sheet Description Features The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz. In the operational band, it provides typical 30 dBm of output power (P-1dB) and 23dB of small-signal gain. This MMIC is suitable for high linear applications, with typical performance of 37dBm OIP3 at 18dBm SCL output. x MMIC die using 4mil thickness x 1 watt output power x 50 : match on input and output x ESD protection (50V MM, and 250V HBM) Typical Performance (Vd=5V, Idsq=0.7A) x Frequency range 37 to 40 GHz x Small signal Gain of 23dB x Output power @P-1 of 30dBm (Typ.) x Output IP3 37dBm (Typ.) @Po=18dBm x Input and Output return losses -8dB Applications x Point-to-Point Radio systems x mmW Communications Attention: Observe Precautions for handling electrostatic sensitive devices. Chip Dimensions Chip Size: 2650 x 2000 Pm (100 x 80 mils) Chip Size Tolerance: ± 10Pm (±0.4 mils) Chip Thickness: 100 ± 10Pm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 Pm (4 x 4 ± 0.4 mils) Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing. ESD Machine Model (Class A): 50V ESD Human Body Model (Class 1A): 250V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Absolute Maximum Ratings[1,2,3,4] Symbol Parameters Unit Max Vd Positive Supply Voltage[2] V 5.5 Vg Gate Supply Voltage V -2 to 0 PD Power Dissipation[2] W 6 Pin CW Input Power[2] dBm 20 Tch Operating Channel Temp.[3,4] °C +150 Tstg Storage Case Temp. °C -65 to +155 Tmax Maximum Assembly Temp (30 sec max) °C +260 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. These ratings apply to each individual FET 4. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. DC Specifications/ Physical Properties [1] Symbol Parameters and Test Conditions Unit Min Typ Id(q) Drain Supply Current (Vd=5 V, Vg set for Id(q)Typical) mA Vg Gate Supply Operating Voltage (Id(q) = 700 (mA)) V Tch-bs Thermal Resistance (Channel-to-Base Plate) °C/W 12 Tch Channel Temperature °C 150 Max 700 -1.3 -1 -0.7 Note: 1. Assume die epoxied to evaluation RF module at 92.25°C base plate temperature. RF Specifications [1, 2] TA= 25°C, Vdd = 5.0 V, Idq =0.7 A, Vg = -1V, Zo=50 : Symbol Parameters and Test Conditions Units Freq Operational Frequency GHz 37 Gain Small-signal Gain [2] dB 20 23 P-1dB Output Power at 1dB [2] Gain Compression dBm 28 30 IM3 Relative third Order Inter-modulation Level dBc 'f=20MHz, Po=+18dBm, SCL 37 RLin Input Return Loss dB 8 RLout Output Return Loss dB 8 Isolation Reverse Isolation dB 50 Note: 1. Small/Large -signal data measured at TA = 25°C. 2. 100% on wafer RF test is done at frequency= 37, 38 and 40GHz. 2 Minimum Typical Maximum 40 Typical Performance (Measured data includes approximately 0.2nH bonding wire for RF input and RF output ports.) (TA = 25°C, Vdd = 5V, Idq = 0.7 A, Vg = -1 V, Zin = Zout = 50 :) 30 -30 S21[dB] S12[dB] 25 0 -35 15 -45 10 -50 5 -55 Return Loss [dB] -40 S12 [dB] S21[dB] -5 20 -10 -15 0 S11[dB] S22[dB] -60 20 25 30 35 40 Frequency [GHz] 45 -20 50 20 Figure 1. Typical gain and reverse Isolation 45 50 8 25 Noise Figure [dB] P1, P3 [dBm], PAE[%] 35 40 Frequency [GHz] 10 30 20 15 P-1 PAE@P1 P-3 PAE@P3 10 5 6 4 2 0 0 34 35 36 37 38 39 Frequency[GHz] 40 41 -20 39 41 Frequency [GHz] 43 45 40 1400 Pout(dBm) PAE[%] Id(total) 35 30 1300 1200 25 1100 20 1000 15 900 10 800 5 700 -55 0 600 -60 -5 -35 -40 -45 -50 34 35 36 37 38 Frequency [GHz] 39 40 41 Figure 5. Typical third order inter-modulation product level vs. frequency at different single carrier output level (SCL) -15 -10 -5 0 Pin [dBm] 5 10 15 Ids [mA] Po[dBm], and, PAE[%] -30 37 Figure 4. Typical noise figure SCL=[10dBc] SCL=[15dBc] SCL=[18dBc] SCL=[20dBc] -25 35 42 Figure 3. Typical output power (P-1 and P-3) vs. frequency Relative IM3 level [dBc] 30 Figure 2. Typical return Loss (input and output) 35 3 25 500 Figure 6. Typical output power, PAE, and drain current versus Input power at 38GHz Typical over temperature dependencies (This test has been done by a chip-on-module environment.) (TA = 25°C, Vdd = 5 V, Id(q) = 0.7 A, Zin = Zout = 50 :) 0 S21[dB] S11[dB] -5 -10 S11_25 S11_-40 S11_85 -15 -20 20 25 30 35 40 Frequency[GHz] 45 50 Figure 7. Typical S11 over temperature P-1 [dBm] S22[dB] -5 -10 S22_25 S22_-40 S22_85 -20 20 25 30 35 40 Frequency[GHz] 45 20 25 30 35 40 Frequency[GHz] 45 50 35 34 33 32 31 30 29 28 27 26 25 P-1_-40deg P-1_25deg P-1_85deg 34 50 Figure 9. Typical S22 over temperature 35 36 37 38 39 Frequency [GHz] 40 41 42 Figure 10. Typical P1 over temperature 20 10 45 -10 40 -15 35 -20 30 -25 25 -30 20 -35 15 5 0 20 K() Meas_25C K() Meas_85C K() Meas_n40C 25 5 30 35 40 Frequency (GHz) Figure 11. Typical K-factor over temperature 4 -40 OIP3(-40C) OIP3(85C) IM3(25C) 10 45 50 0 34 35 36 37 38 39 Frequency [GHz] OIP3(25C) IM3(-40C) IM3(85C) 40 41 Figure 12. Typical IM3 level over temperature at Po=18dBm, SCL -45 -50 42 -55 IM3 Level [dBc] OIP3 [dBm] 15 K_factor S21_25 S21_-40 S21_85 Figure 8. Typical Gain over temperature 0 -15 30 28 26 24 22 20 18 16 14 12 10 Typical Scattering Parameters [1], (TA = 25°C, Vd = 5 V, ID = 0.7A, Zin = Zout = 50 :) Freq S11 [dB] S11 Mag. S11 Ang. S21 [dB] S21 Mag. S21 Ang. S12 [dB] S12 Mag. S12 Ang. S22 [dB] S22 Mag. S22 Ang. 20 -1.98 0.80 -162.60 -23.67 0.07 -70.83 -53.79 2.04E-03 60.16 -1.76 0.82 42.11 21 -2.10 0.79 -172.27 -15.54 0.17 -118.13 -51.86 2.55E-03 43.77 -1.52 0.84 32.76 22 -2.20 0.78 177.22 -6.91 0.45 -177.73 -54.11 1.97E-03 12.05 -1.29 0.86 20.76 23 -2.35 0.76 164.63 -0.36 0.96 106.90 -51.77 2.58E-03 2.58 -1.72 0.82 7.75 24 -2.43 0.76 152.29 3.51 1.50 35.80 -53.86 2.03E-03 -15.98 -2.37 0.76 -0.32 25 -2.51 0.75 140.18 6.93 2.22 -30.19 -54.72 1.84E-03 -21.05 -2.44 0.76 -8.00 26 -2.79 0.73 127.42 9.58 3.01 -96.01 -52.80 2.29E-03 -30.10 -2.31 0.77 -17.39 27 -2.90 0.72 113.96 11.57 3.79 -156.30 -52.44 2.39E-03 -39.63 -2.38 0.76 -29.13 28 -2.77 0.73 98.12 14.02 5.02 148.66 -51.53 2.65E-03 -44.10 -2.58 0.74 -42.00 29 -2.64 0.74 80.74 17.48 7.48 91.27 -50.63 2.94E-03 -63.53 -2.86 0.72 -55.04 30 -3.06 0.70 60.69 21.20 11.48 23.71 -50.95 2.83E-03 -63.05 -3.43 0.67 -70.00 31 -4.42 0.60 38.62 23.10 14.28 -53.25 -49.48 3.36E-03 -84.29 -4.04 0.63 -86.88 32 -6.02 0.50 24.17 23.31 14.63 -123.77 -50.23 3.08E-03 -114.02 -4.90 0.57 -106.93 33 -7.22 0.44 12.92 23.55 15.04 172.04 -52.01 2.51E-03 -118.15 -5.99 0.50 -131.80 34 -7.75 0.41 -0.90 24.10 16.03 107.61 -53.34 2.15E-03 -145.73 -7.86 0.40 -164.40 35 -7.80 0.41 -17.10 24.48 16.74 40.77 -53.03 2.23E-03 169.78 -10.09 0.31 152.89 36 -8.41 0.38 -45.04 24.21 16.23 -25.74 -51.86 2.55E-03 158.04 -11.90 0.25 108.71 37 -9.59 0.33 -78.60 23.77 15.43 -90.78 -52.60 2.34E-03 131.86 -12.03 0.25 70.77 38 -11.03 0.28 -121.28 23.59 15.12 -154.92 -54.53 1.88E-03 84.13 -10.77 0.29 44.48 39 -10.87 0.29 -167.81 23.47 14.91 137.66 -58.23 1.23E-03 134.51 -9.02 0.35 20.62 40 -9.38 0.34 149.81 23.20 14.45 67.14 -59.62 1.04E-03 80.24 -7.65 0.41 -3.15 41 -7.55 0.42 115.59 22.60 13.49 -7.76 -54.15 1.96E-03 131.10 -7.17 0.44 -31.16 42 -6.41 0.48 85.95 21.52 11.92 -88.85 -54.99 1.78E-03 85.64 -7.97 0.40 -64.60 43 -6.92 0.45 63.21 19.07 8.98 -179.14 -56.12 1.56E-03 157.70 -9.80 0.32 -96.97 44 -7.55 0.42 57.34 13.35 4.65 91.28 -53.62 2.08E-03 124.82 -11.56 0.26 -139.97 45 -6.13 0.49 54.28 6.04 2.00 16.93 -54.40 1.91E-03 120.31 -11.18 0.28 171.25 46 -4.85 0.57 46.36 -1.24 0.87 -45.80 -47.20 4.36E-03 55.90 -8.94 0.36 124.43 47 -3.77 0.65 35.82 -8.39 0.38 -103.32 -55.39 1.70E-03 44.65 -5.98 0.50 91.95 48 -2.83 0.72 26.24 -15.48 0.17 -157.72 -67.79 4.08E-04 -34.88 -4.07 0.63 67.05 49 -2.10 0.78 17.00 -23.02 0.07 150.75 -55.43 1.69E-03 -89.47 -2.90 0.72 46.03 50 -1.44 0.85 7.21 -32.04 0.03 115.26 -53.98 2.00E-03 -1.66 -1.83 0.81 29.63 Note: 1. Data obtained with approximately 0.2nH bonding wire for RF in and RF out ports. 5 Application and Usage Recommended quiescent DC bias condition for optimum power and linearity performances is Vd=5 volts with Vg (-1V) set for Id=700 mA. Minor improvements in performance are possible depending on applications. The quiescent drain current range is 500 to 900mA. Muting can be accomplished by setting Vg1, Vg2, and Vg3 to the pinch-off voltage Vp (-2V). A typical DC bias configuration is shown in Figure 13. Vd3 can be biased from either side. The RF input and output are DC decoupled internally. No ground wires are needed since ground connections are made with plated throughholes to the backside of the device. Figure 14 illustrates a simplified schematic of the AMMC-6442 MMIC. 0.1uF Vd1, Vd2, Vd3 >68pf >68pf >68pf RFin RFout >68pf Vg >68pf >68pf 0.1uF Vd3 0.1uF y and bias configuration Notes: 1. Vd3 can be biased from either side. 2. 1uF capacitors, not shown on gate and drain lines are required. Figure 13. Typical Assembly and bias configuration Vd1 Vd2 Vd3 RFin RFout Vg1 Vg2 Vg3 Figure 14. Schematic and recommended assemble example 6 Vd3 Note: No RF performance degradation is seen due to ESD up to 250V HBM and 50V MM. The DC characteristics in general show increased leakage at lower ESD discharge voltages. The user is reminded that this device is ESD sensitive and needs to be handled with all necessary ESD protocols. Recommended Assembly Techniques The chip should be attached directly to the ground plane using electrically conductive epoxy (Note 1). For conductive epoxy, the amount should be just enough to provide a thin fillet around the bottom perimeter of the die. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. Thermo-sonic wedge bonding is the preferred method for wire attachment to the bond pads. To optimize performance for this device, the RF connections should be kept at approximately 9mils in length using 1mil gold bond wire. The recommended wire bonding stage temperature is 150±2˚C. Vd1 GND 0 300 Vd2 550 GND This MMIC is static sensitive and ESD handling precautions should be taken. For more detailed information, see Avago Application Note 54 “GaAs MMIC ESD, Die Attach and Bonding Guidelines.” Notes: 1. Sumitomo 1295SA silver epoxy is recommended. 2. Eutectic attach is not recommended any may jeopardize reliability of the device Vd3 1800 800 The chip is 100Pm thick and should be handled with care. This chip has exposed air bridges on the top surface. Handle at the edges or with a custom collet, (do not pick up die with vacuum on die center). 2650 2070 2000 2000 RF_IN 1000 1000 RF_OUT 0 0 0 96 260 Vg1 Figure 15. Die dimensions 7 580 GND 1075 Vg2 1800 Vg3 2650 2070 GND Vd3 Ordering Information: AMMC-6442-W10 = 10 devices per tray AMMC-6442-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2010 Avago Technologies. All rights reserved. AV02-2237EN - August 19, 2010