Anachip AF4410NSL N-channel enhancement mode power mosfet Datasheet

AF4410N
N-Channel Enhancement Mode Power MOSFET
„ Features
„ General Description
- Simple Drive Requirement
- Low On-resistance
- Fast Switching
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
13.5
ID (A)
10
„ Pin Assignments
„ Pin Descriptions
S
1
8
D
Pin Name
Description
S
2
7
D
S
3
6
D
S
G
D
Source
Gate
Drain
G
4
5
D
SO-8
„ Ordering information
Feature
F :MOSFET
A X
4410N X X X
PN
Package
Lead Free
Packing
S: SO-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Aug 30, 2005
1/5
AF4410N
N-Channel Enhancement Mode Power MOSFET
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25ºC
TA=70ºC
ID
Continuous Drain Current (Note 1)
IDM
Pulsed Drain Current (Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
PD
TSTG
TJ
Rating
30
±25
10
8
50
2.5
0.02
-55 to 150
-55 to 150
TA=25ºC
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient (Note 1)
Maximum
50
Max.
Units
ºC/W
„ Electrical Characteristics at TJ=25ºC unless otherwise specified
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance (Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(TJ=25oC)
Drain-Source Leakage Current
(TJ=70oC)
Gate-Source Leakage
Total Gate Charge (Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time (Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
∆BVDSS / ∆TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Min.
Typ.
Max.
Units
30
-
-
V
-
0.037
-
V/oC
1
-
20
13.5
22
3
-
VDS=30V, VGS=0V
-
-
1
VDS=24V, VGS=0V
-
-
25
VGS=±25V
ID=10A,
VDS=15V,
VGS=5V
VDS=25V,
ID=1A,
RG=3.3Ω, VGS=5V
RD=25Ω
VGS=0V,
VDS=15V,
f=1.0MHz
-
13.5
4
7
14
16
21
15
1160
240
165
±100
-
Min.
-
Typ.
17.1
12
Max.
1.2
-
VGS=0V, ID=250uA
Reference to 25oC,
ID=1mA
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=15V, ID=10A
mΩ
V
S
uA
nA
nC
ns
pF
„ Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
2
Test Conditions
IS=2.1A, VGS=0V
IS=5A, VGS=0V,
dl/dt=100A/µs
o
Unit
V
ns
nC
Note 1: Surface mounted on 1 in copper pad of FR4 board, 125 C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature.
Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 30, 2005
2/5
AF4410N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 30, 2005
3/5
AF4410N
N-Channel Enhancement Mode Power MOSFET
„ Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 30, 2005
4/5
AF4410N
N-Channel Enhancement Mode Power MOSFET
„ Marking Information
SO-8
( Top View )
8
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Logo
4410N
AA Y W X
Part Number
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
~
Factory code
„ Package Information
Package Type: SO-8
D
7
6
5
2
3
4
E1
E
8
1
L
DETAIL A
B
C
A1
A
e
θ
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A
A1
B
C
D
E
E1
L
θ
e
Dimensions In Millimeters
Min.
Nom.
Max.
1.35
1.55
1.75
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
5.80
6.15
6.50
3.80
3.90
4.00
0.38
0.71
1.27
o
o
o
0
4
8
1.27 TYP.
Anachip Corp.
www.anachip.com.tw
Rev. 1.1 Aug 30, 2005
5/5
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