Transistors IC SMD Type NPN Medium Frequency Transistor BF840 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low current (max. 25 mA). 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low voltage (max. 40 V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 4 V Collector current IC 25 mA Peak collector current ICM 25 mA Total power dissipation * Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO IE = 0; VcB = 20 V 100 nA Emitter cutoff current IEBO Ic = 0; VEB = 4 V 100 nA DC current gain hFE Ic = 1 mA; VcE = 10 V 67 Base to emitter voltage VBE Ic = 1 mA; VcE = 10 V 675 Feedback capacitance Cre Ic = 0; VcB = 10 V; f = 1 MHz 0.3 pF Ic = 1 mA; VcE = 10 V; f = 100 MHz 380 MHz Transition frequency fT Testconditons Min Typ 222 725 775 mV Marking Marking NC www.kexin.com.cn 1