GE BF820 Small signal transistors (npn) Datasheet

BF820, BF822
Small Signal Transistors (NPN)
FEATURES
SOT-23
♦ NPN Silicon Epitaxial Planar Transistors
.122 (3.1)
.118 (3.0)
.016 (0.4)
.056 (1.43)
.052 (1.33)
3
♦ As complementary types, the PNP transistors BF821 and BF823 are recommended.
.016 (0.4)
.045 (1.15)
.037 (0.95)
.037(0.95) .037(0.95)
.007 (0.175)
.005 (0.125)
2
max. .004 (0.1)
1
especially suited for application in class-B
video output stages of TV receivers and
monitors.
Top View
MECHANICAL DATA
.102 (2.6)
.094 (2.4)
.016 (0.4)
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking code
BF820 = 1V
BF822 = 1X
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
BF820
BF822
VCBO
VCBO
300
250
V
V
Collector-Emitter Voltage
BF822
VCEO
250
V
Collector-Emitter Voltage
BF820
VCER
300
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
50
mA
Peak Collector Current
ICM
100
mA
Power Dissipation at TSB = 50 °C
Ptot
3001)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1)
4/98
Device on fiberglass substrate, see layout
BF820, BF822
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
at IC = 100 µA, IB = 0
BF820
BF822
V(BR)CBO
V(BR)CBO
300
250
–
–
–
–
V
V
Collector-Emitter Breakdown Voltage
at IC = 10 mA, IE = 0
BF822
V(BR)CEO
250
–
–
V
Collector-Emitter Breakdown Voltage
at RBE = 2.7 kΩ, IC = 10 mA
BF820
V(BR)CER
300
–
–
V
Emitter-Base Breakdown Voltage
at IE = 100 µA, IB = 0
V(BR)EBO
5
–
–
V
Collector-Base Cutoff Current
at VCB = 200 V, IE = 0
ICBO
–
–
10
nA
50
10
nA
µA
Collector-Emitter Cutoff Current
at RBE = 2.7 kΩ, VCE = 250 V
at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C
ICER
ICER
Collector Saturation Voltage
at IC = 30 mA, IB = 5 mA
VCEsat
–
–
0.6
V
DC Current Gain
at VCE = 20 V, IC = 25 mA
hFE
50
–
–
–
Gain-Bandwidth Product
at VCE = 10 V, IC = 10 mA
fT
60
–
–
MHz
Feedback Capacitance
at VCE = 30 V, IC = 0, f = 1 MHz
Cre
–
–
1.6
pF
Thermal Resistance Junction to Ambient Air
RthJA
–
–
4301)
K/W
1)
Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.06 (1.5)
Dimensions in inches (millimeters)
.20 (5.1)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Similar pages