BF820, BF822 Small Signal Transistors (NPN) FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the PNP transistors BF821 and BF823 are recommended. .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 especially suited for application in class-B video output stages of TV receivers and monitors. Top View MECHANICAL DATA .102 (2.6) .094 (2.4) .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code BF820 = 1V BF822 = 1X Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage BF820 BF822 VCBO VCBO 300 250 V V Collector-Emitter Voltage BF822 VCEO 250 V Collector-Emitter Voltage BF820 VCER 300 V Emitter-Base Voltage VEBO 5 V Collector Current IC 50 mA Peak Collector Current ICM 100 mA Power Dissipation at TSB = 50 °C Ptot 3001) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) 4/98 Device on fiberglass substrate, see layout BF820, BF822 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage at IC = 100 µA, IB = 0 BF820 BF822 V(BR)CBO V(BR)CBO 300 250 – – – – V V Collector-Emitter Breakdown Voltage at IC = 10 mA, IE = 0 BF822 V(BR)CEO 250 – – V Collector-Emitter Breakdown Voltage at RBE = 2.7 kΩ, IC = 10 mA BF820 V(BR)CER 300 – – V Emitter-Base Breakdown Voltage at IE = 100 µA, IB = 0 V(BR)EBO 5 – – V Collector-Base Cutoff Current at VCB = 200 V, IE = 0 ICBO – – 10 nA 50 10 nA µA Collector-Emitter Cutoff Current at RBE = 2.7 kΩ, VCE = 250 V at RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C ICER ICER Collector Saturation Voltage at IC = 30 mA, IB = 5 mA VCEsat – – 0.6 V DC Current Gain at VCE = 20 V, IC = 25 mA hFE 50 – – – Gain-Bandwidth Product at VCE = 10 V, IC = 10 mA fT 60 – – MHz Feedback Capacitance at VCE = 30 V, IC = 0, f = 1 MHz Cre – – 1.6 pF Thermal Resistance Junction to Ambient Air RthJA – – 4301) K/W 1) Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm)