DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Sep 18 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD81 package through Implotec(1) technology. The SOD81 package is • High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability k handbook, 4 columns a • Available in ammo-pack. MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER MIN. MAX. BYD53D − 200 V BYD53G − 400 V BYD53J − 600 V BYD53K − 800 V BYD53M − 1000 V BYD53U − 1200 V BYD53V − 1400 V BYD53D − 200 V BYD53G − 400 V BYD53J − 600 V BYD53K − 800 V BYD53M − 1000 V continuous reverse voltage BYD53U − 1200 V BYD53V − 1400 V Ttp = 55 °C; lead length = 10 mm see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 − 0.75 A − 0.85 A Tamb = 65 °C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 − 0.40 A − 0.45 A BYD53D to M − 6.5 A BYD53U and V − 8.25 A average forward current BYD53U and V average forward current BYD53D to M BYD53U and V IFRM UNIT repetitive peak reverse voltage BYD53D to M IF(AV) CONDITIONS repetitive peak forward current 1998 Dec 04 Ttp = 55 °C; see Figs 6 and 7 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM BYD53 series PARAMETER CONDITIONS MIN. MAX. UNIT BYD53D to M − 3.6 A BYD53U and V − 4.45 A A Tamb = 65 °C; see Figs 8 and 9 repetitive peak forward current IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 5 ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C MIN. TYP. MAX. − − 2.1 V − − 1.7 V BYD53D to M − − 3.6 V BYD53U and V − − 2.3 V BYD53D 300 − − V BYD53G 500 − − V see Fig.12 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD53D to M CONDITIONS IF = 1 A; Tj = Tj max; see Figs 13 and 14 BYD53U and V VF V(BR)R IR trr forward voltage reverse avalanche breakdown voltage IF = 1 A; see Figs 13 and 14 IR = 0.1 mA BYD53J 700 − − V BYD53K 900 − − V BYD53M 1100 − − V BYD53U 1300 − − V BYD53V 1500 − − V VR = VRRMmax; see Fig.15 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.15 − − 100 µA − − 30 ns reverse current reverse recovery time BYD53D to J BYD53K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 BYD53U and V Cd diode capacitance 1998 Dec 04 UNIT f = 1 MHz; VR = 0; see Fig.16 3 − − 75 ns − − 150 ns − 20 − pF Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL dI R -------dt PARAMETER BYD53 series MIN. TYP. − − 7 A/µs BYD53K and M − − 6 A/µs BYD53U and V − − 5 A/µs maximum slope of reverse recovery current BYD53D to J CONDITIONS when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.19 MAX. UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 60 K/W 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17. For more information please refer to the ‘General Part of associated Handbook’. 1998 Dec 04 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series GRAPHICAL DATA MGM267 1.0 MLC303 1.6 handbook, halfpage handbook, halfpage IF(AV) I F(AV) (A) (A) 0.8 1.2 0.6 lead length 10 mm 0.8 0.4 0.4 0.2 0 0 40 0 80 120 160 200 Ttp (°C) 0 T tp ( oC) 200 BYD53U and V a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. BYD53D to M a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 100 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 MGM266 0.6 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MLC304 0.8 handbook, halfpage handbook, halfpage I F(AV) IF(AV) (A) (A) 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 200 Tamb (°C) 0 100 Device mounted as shown in Fig. 17. Switched mode application. BYD53U and V a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig. 17. Switched mode application. Fig.4 Fig.5 BYD53D to M a = 1.42; VR = VRRMmax; δ = 0.5. Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1998 Dec 04 5 Tamb ( o C) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series MGM269 8 handbook, full pagewidth IFRM (A) δ = 0.05 6 0.1 4 0.2 2 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 BYD53D to M Ttp = 55°C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLC307 10 handbook, full pagewidth I FRM (A) 8 δ = 0.05 6 0.1 4 0.2 0.5 2 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYD53U and V Ttp = 55°C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1998 Dec 04 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series MGM268 4 handbook, full pagewidth IFRM δ = 0.05 (A) 3 0.1 2 0.2 1 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 BYD53D to M Tamb = 65 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLC308 5 handbook, full pagewidth I FRM (A) 4 δ = 0.05 3 0.1 2 0.2 0.5 1 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 BYD53U and V Tamb = 65 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1998 Dec 04 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series MGM265 4 MLC302 3 handbook, halfpage handbook, halfpage P (W) a = 3 2.5 3 2 P (W) 1.57 a = 3 2.5 2 1.42 1.57 2 1.42 2 1 1 0 0 0.2 0.4 0.6 0 0.8 1.0 IF(AV) (A) BYD53D to M a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. 0.5 0 I F(AV) (A) 1.0 BYD53U and V a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MBK457 200 MGM264 6 handbook, halfpage handbook, halfpage IF (A) Tj ( oC) 4 100 2 D 0 G J K M U V 0 0 1000 VR (V) 2000 0 4 6 8 10 VF (V) BYD53D to M Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature as a function of reverse voltage. 1998 Dec 04 2 Fig.13 Forward current as a function of forward voltage; maximum values. 8 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series MLC301 6 MGA853 3 10halfpage handbook, handbook, halfpage IF (A) IR (µA) 4 102 2 10 0 0 1 2 3 4 V F (V) 1 5 100 0 T j ( o C) 200 BYD53U and V Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.14 Forward current as a function of forward voltage; maximum values. Fig.15 Reverse current as a function of junction temperature; maximum values. MLC305 102 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 10 10 2 V R (V) 103 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.16 Diode capacitance as a function of reverse voltage; typical values. 1998 Dec 04 Fig.17 Device mounted on a printed-circuit board. 9 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series DUT handbook, full pagewidth IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.19 Reverse recovery definitions. 1998 Dec 04 10 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD53 series PACKAGE OUTLINE Hermetically sealed glass package; ImplotecTM(1) technology; axial leaded; 2 leads SOD81 G1 (2) k a b D L G L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G max. G1 max. L min. mm 0.81 2.15 3.8 5 28 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 SOD81 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135106/00/04/pp12 Date of release: 1998 Dec 04 Document order number: 9397 750 04887