AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications). AO4822AL is a Green Product ordering option. AO4822A and AO4822AL are electrically identical. VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 D2 G2 S1 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V 30 2 W 1.28 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 8.5 TA=25°C Power Dissipation Maximum 30 RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W AO4822A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, V DS=5V 30 TJ=55°C 3 V 13.4 16 20 25 VGS=4.5V, ID=6A 19.5 26 VDS=5V, ID=8.5A 23 gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 1.7 Static Drain-Source On-Resistance Crss 5 nA RDS(ON) Output Capacitance Units 100 VGS=10V, ID=8.5A Coss Max V VDS=24V, V GS=0V IDSS IS Typ A 0.75 955 VGS=0V, VDS=15V, f=1MHz VGS=10V, V DS=15V, ID=8.5A 1 V 3 A 1250 pF 145 pF pF 0.5 0.85 Ω 17 24 nC 9 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.7 tD(on) Turn-On DelayTime 5 6.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=15V, R L=1.8Ω, RGEN=3Ω mΩ S 112 VGS=0V, VDS=0V, f=1MHz mΩ 3.4 nC nC ns 6 7.5 ns 19 25 ns 4.5 6 ns IF=8.5A, dI/dt=100A/µs 16.7 21 IF=8.5A, dI/dt=100A/µs 6.7 10 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4822A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 35 4V 10V 25 20 3.5V 21 ID(A) ID (A) VDS=5V 28 4.5V 15 125°C 14 10 13.4 VGS=3V 5 22 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 26 30.76 3.5 2.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 26 1.6 24 VGS=10V Normalized On-Resistance VGS=4.5V 22 RDS(ON) (mΩ) 16 25°C 7 20 18 16 VGS=10V 14 12 ID=8.5A 1.4 VGS=4.5V 1.2 1 10 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4822A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 4 8 12 16 20 0 5 22 26 15 20 25 0.76 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 20 0 0.001 0.1 10 100 VDS (Volts) D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 30 10 10s 1 30 TJ(Max)=150°C TA=25°C 40 10µs 100µs 1ms 10.0 0.1 10 50 RDS(ON) limited Power (W) ID (Amps) 16 Crss 0 0 ZθJA Normalized Transient Thermal Resistance 13.4 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000