Comset BD649 Silicon darlington power transistor Datasheet

SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue
switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
17/10/2012
Value
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
COMSET SEMICONDUCTORS
60
80
100
120
140
45
60
80
100
120
Unit
V
V
5
V
8
A
12
A
1|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
@ Tmb < 25°
Storage Temperature range
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
Unit
300
mA
62.5
Watts
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
From junction to mounting base
RthJ-A
From junction to ambient in free air
17/10/2012
COMSET SEMICONDUCTORS
Value
Unit
2
K/W
62.5
K/W
2|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE=0,VCB =VCEOMax
ICBO
Collector Cutoff Current
IE=0,VCB =1/2
VCBOMax
TJ=150°C
ICEO
Collector Cutoff Current
IE=0, VCE =1/2
VCEOMax
IEBO
Emitter Cutoff Current
VEB=5 V, IC=0
VCEO
Collector-Emitter
Breakdown Voltage
IC=30 mA, IB= 0
IC=4 A, IB=16 mA
IC=3 A, IB=12 mA
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC=5 A, IB=50 mA
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
17/10/2012
IC=12 A, IB=50 mA
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
0.2
mA
-
-
2
mA
-
-
0.5
mA
-
-
5.0
mA
45
60
80
100
120
-
-
2
-
-
2
V
V
-
-
2.5
-
-
3
V
3|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IC=4 A, VCE=3 V
VBE
hFE
hfe
BD643
BD645
Base-Emitter Voltage (*)
BD647
IC=3 A, VCE=3 V
BD649
BD651
BD643
BD645
VCE=3.0 V, IC=0.5 A BD647
BD649
BD651
VCE=3.0 V, IC=4 A
BD643
BD645
DC Current Gain (*)
BD647
VCE=3.0 V, IC=3 A
BD649
BD651
BD643
BD645
VCE=3.0 V, IC=8 A
BD647
BD649
BD651
VCE=3.0 V, IC=4 A
BD643
f=1MHz
BD645
Small Signal Current Gain
BD647
VCE=3.0 V, IC=3 A
f=1MHz
BD649
BD651
Min
Typ
Max
-
-
2.5
-
-
2.5
-
1900
-
750
-
-
750
-
-
-
1800
-
10
-
-
10
10
10
10
-
-
Unit
V
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
17/10/2012
COMSET SEMICONDUCTORS
4|5
SEMICONDUCTORS
BD643 – 645 – 647 – 649 – 651
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Case :
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
17/10/2012
[email protected]
COMSET SEMICONDUCTORS
5|5
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