CHA2266 RoHS COMPLIANT 12.5-17GHz Low-Noise Driver Amplifier GaAs Monolithic Microwave IC Description VD 1 The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs PHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. VD 2 IN Main Features OUT Typical on wafer measurements ( Vds = 4V, Ids = 130mA ) 40 35 • • • • • • Broad band performance 12.5–17GHz 2.5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0.1mm 30 Gain & Return loss / dB 25 20 15 MS11 MS21 MS22 NF 10 4,1 5 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency / GHz 18 19 20 21 22 23 Main Characteristics Tamb=+25°C Symbol Fop Parameter Min Operating frequency range Typ 12.5 G Small signal gain NF Noise Figure 2.5 Output power at 1 dB gain compression 14.5 P1dB 31 Max Unit 17 GHz 34 dB 3 dB dBm ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22667082- 23 Mar 07 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24 25 12.5-17GHz Driver Amplifier CHA2266 Electrical Characteristics on wafer Tamb = +25°C, Vd = 4V Symbol Fop Parameter Min Operating frequency range G Typ 12.5 Small signal gain 31 Max Unit 17 GHz 34 dB ± 0.5 dB ∆G Small signal gain flatness NF Noise Figure 2.5 3.0 dB Input return loss -10 -6 dB RLout Output return loss -10 -6 dB P1dB Output power at 1 dB gain compression P3dB Saturated output power RLin Id small signal Rth 13.5 14.5 15 16 Drain bias current 130 Thermal resistance @ Tback side=25°C dBm 170 mA 80°C °C/W Absolute maximum Ratings (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.3 V Pin Maximum continuous input power overdrive -15 dBm Maximum peak input power overdrive(2) +15 dBm Maximum junction temperature 175 °C Tj max Top Operating temperature range -40 to +85 °C Tstg Storage temperature -55 to +125 °C (1) Operation of this device above any of these parameters may cause permanent damage. (2) Duration <1s Ref. : DSCHA22667082- 23 Mar 07 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12.5-17 GHz Driver Amplifier CHA2266 Typical Results Typical Chip Response ( On wafer S-parameter*) ( Vds = 4V, Ids = 130mA ) 40 35 30 Gain & Return loss / dB 25 20 15 MS11 MS21 MS22 NF 10 4,1 5 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency / GHz 18 19 20 21 22 23 24 25 *Return loss improves with bondings. Typical On Wafer Scattering Parameters: Tamb = +25°C, Bias Conditions: Vd = 4V Freq/GHz 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 19.00 20.00 21.00 22.00 23.00 24.00 25.00 MS11 -0.19 -0.30 -0.46 -0.80 -1.44 -2.86 -6.63 -17.39 -18.06 -12.00 -9.86 -9.01 -8.27 -6.40 -5.55 -4.88 -4.83 -5.31 -5.85 -6.91 -7.45 PS11 -60.43 -74.26 -89.33 -106.32 -125.75 -151.22 177.56 153.85 -84.40 -98.21 -113.78 -121.29 -129.83 -139.02 -156.24 -174.36 166.53 149.22 132.80 118.54 103.68 Ref. : DSCHA22667082- 23 Mar 07 MS12 -80.46 -78.78 -75.88 -72.20 -73.72 -66.33 -70.35 -66.55 -65.32 -59.86 -76.73 -56.32 -57.21 -62.54 -65.06 -67.73 -55.41 -53.79 -52.72 -50.50 -71.86 PS12 -28.08 -70.24 2.69 32.17 -51.84 -115.35 -76.43 -128.54 168.52 -136.83 168.29 80.85 -170.04 -89.64 53.72 -90.69 154.09 91.59 -168.14 80.81 -7.37 MS21 -9.27 -0.12 6.56 12.83 19.02 25.20 30.42 33.53 34.77 35.15 35.05 34.64 34.05 33.15 31.28 28.65 25.68 22.47 19.33 16.33 13.42 PS21 55.33 -24.96 -88.05 -142.23 165.74 108.42 42.05 -28.39 -94.85 -154.68 149.44 97.72 46.71 -4.88 -55.40 -101.56 -143.31 -179.42 148.56 119.70 93.05 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 MS22 -2.21 -2.68 -3.27 -4.19 -5.51 -7.08 -8.70 -9.87 -11.53 -12.46 -13.41 -12.58 -11.91 -11.24 -10.37 -9.43 -8.53 -7.66 -7.00 -6.35 -6.02 PS22 -70.44 -82.41 -95.03 -107.99 -118.06 -126.35 -131.49 -134.03 -135.84 -131.75 -127.10 -114.59 -113.66 -113.55 -116.41 -117.46 -120.11 -125.61 -131.61 -137.67 -145.44 NF 4.06 2.88 2.46 2.01 1.92 1.60 1.55 1.46 2.24 Specifications subject to change without notice 12.5-17GHz Driver Amplifier CHA2266 Typical Test-Jig Results S- Parameters @ small signal Tamb 25 °C, Vd = 4V 40 35 30 25 Gain, Return loss / dB 20 15 10 S11 5 S21 S22 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency / GHz S21 in the full temperature range 40 35 30 S21 (dB) 25 -50°C 20 25°C +85°C 15 10 5 0 5 10 15 20 25 30 Frequency (GHz) NF vs Frequency and Temperature Ref. : DSCHA22667082- 23 Mar 07 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 30 12.5-17 GHz Driver Amplifier CHA2266 NF in the full temperature range 6 5 NF (dB) 4 -50°C 3 +25°C +85°C 2 1 0 10 11 12 13 14 15 16 17 18 Frequency (GHz) Gain & Pout vs Pin @ 14, 15 and 16GHz Tamb = 25°C,Vd =4 V Gain / Pout @ 14GHz 40 18 38 16 14 Gain Pout Compression Gain (dB) 34 12 32 10 30 8 28 6 26 4 24 2 22 0 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 PIN (dBm) Ref. : DSCHA22667082- 23 Mar 07 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Pout (dBm), compression (dB) 36 12.5-17GHz Driver Amplifier CHA2266 Gain / Pout @ 15GHz 40 18 38 16 14 Gain Pout Gain / dB 34 12 Compression 32 10 30 8 28 6 26 4 24 2 22 Pout (dBm),compression (dB) 36 0 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 Pin / dBm Gain / Pout @ 16GHz 40 18 38 16 36 14 Pout Compression Gain / dB 34 12 32 10 30 8 28 6 26 4 24 2 22 0 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 Pin / dBm Ref. : DSCHA22667082- 23 Mar 07 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice Pout (dBm), compression (dB) Gain 12.5-17 GHz Driver Amplifier CHA2266 Psat #3dB 17 16 Output power (dBm) 15 14 13 12 11 12GHz 10 14GHz 16GHz 18GHz 9 8 7 -50 -25 0 25 50 75 50 75 Temperature (°C) Pout @ 1dB compression 17 16 Output power (dBm) 15 14 13 12 11 10 12GHz 9 14GHz 16GHz 18GHz 8 7 -50 -25 0 25 Temperature (°C) Ref. : DSCHA22667082- 23 Mar 07 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 12.5-17GHz Driver Amplifier CHA2266 Chip Assembly and Mechanical Data Drain supply feed 100 pF VD 1 VD 2 IN OUT Notes: Vd1 & Vd2 pads are internally connected Supply feed should be bypassed. 25µm diameter gold wire is recommended Bond pad positions and Pin references (Chip thickness : 100 µm. all dimensions are in micrometers) Dimensions : 2320 x 1020µm ± 35µm Ordering Information: CHA2266-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22667082- 23 Mar 07 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice