Zetex BC372P Npn silicon planar medium power darlington transistor Datasheet

PART OBSOLETE - USE ZTX603
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
BC372P
ISSUE 2 – SEPT 93
FEATURES
* 100 Volt VCEO
* Gain of 8k at IC=250mA
* Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
12
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb=25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Breakdown Voltage
UNIT
CONDITIONS.
100
V
IC=100µ A, IE=0
V(BR)CES
100
V
IC=100µ A, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
12
V
IE=10µ A, IC=0
Collector Cut-Off
Current
ICBO
100
nA
VCB=80V, IE=0
Emitter Cut-Off Current IEBO
100
nA
VEB=10V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
1.1
V
IC=250mA, IB=0.25mA
Base-Emitter
Saturation Voltage
VBE(sat)
2
V
IC=250mA, IB=0.25mA
Static Forward Current hFE
Transfer Ratio
10K
8K
Transition
Frequency
fT
100
Output Capacitance
Cobo
TYP.
MAX.
IC=100mA, VCE=5V*
IC=250mA, VCE=5V*
25
3-17
MHz
IC=100mA, VCE=5V
f=100MHz
pF
VCB=10V, f=1MHz
Similar pages