PART OBSOLETE - USE ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372P ISSUE 2 SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 12 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb=25°C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 100 V IC=100µ A, IE=0 V(BR)CES 100 V IC=100µ A, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 12 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=80V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=10V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.1 V IC=250mA, IB=0.25mA Base-Emitter Saturation Voltage VBE(sat) 2 V IC=250mA, IB=0.25mA Static Forward Current hFE Transfer Ratio 10K 8K Transition Frequency fT 100 Output Capacitance Cobo TYP. MAX. IC=100mA, VCE=5V* IC=250mA, VCE=5V* 25 3-17 MHz IC=100mA, VCE=5V f=100MHz pF VCB=10V, f=1MHz