DMN313DLT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) ID TA = 25°C 2Ω @ VGS = 4V 270mA 3.2Ω @ VGS = 2.5V 210mA V(BR)DSS • • • • • • • • NEW PRODUCT 30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected up to 2kV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • • • • Backlighting DC-DC Converters Power management functions • • Case: SOT-523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) • • Drain SOT-523 D Gate Gate Protection Diode Top View ESD PROTECTED TO 2kV G Source Equivalent Circuit S Top View Pin-Out Ordering Information (Note 3) Part Number DMN313DLT-7 Notes: Case SOT-523 Packaging 3000 / Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information NA2 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMN313DLT Document number: DS35078 Rev. 2 - 2 Mar 3 NA2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM 2012 Z Apr 4 May 5 2013 A Jun 6 2014 B Jul 7 1 of 5 www.diodes.com Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D August 2011 © Diodes Incorporated DMN313DLT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 4.0V Steady State Continuous Drain Current (Note 5) VGS = 4.0V Steady State Continuous Drain Current (Note 5) VGS = 4.0V t ≤ 10s Continuous Drain Current (Note 4) VGS = 2.5V Steady State Continuous Drain Current (Note 5) VGS = 2.5V t ≤ 10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 30 ±20 0.27 0.21 ID 0.31 0.25 A ID 0.38 0.3 A ID 0.21 0.15 A IDM 0.29 0.22 1.2 Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Max 0.28 474 0.36 361 0.52 252 -55 to +150 ID Pulsed Drain Current (Note 6) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Power Dissipation (Note 5) t ≤ 10s Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s Operating and Storage Temperature Range Unit W °C/W W °C/W W °C/W °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 0.1 ±1.0 V μA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 1.3 1.6 93 0.7 1.5 2 3.2 1.3 V Static Drain-Source On-Resistance 0.5 - VDS = VGS, ID = 250μA VGS = 4V, ID = 10mA VGS = 2.5V, ID = 1mA VDS = 3V, ID = 10mA VGS = 0V, IS = 115mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 36.3 7.6 4.7 128 0.5 0.1 0.1 4.5 2.24 19.2 28.2 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω mS V Test Condition pF VDS = 5V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 4.5V, VDS = 15V, ID = 10mA ns ns ns ns VGS = 4.5V, VDS = 15V, RG = 2Ω, ID = 180mA 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN313DLT Document number: DS35078 Rev. 2 - 2 2 of 5 www.diodes.com August 2011 © Diodes Incorporated DMN313DLT 1 1.0 VGS = 10V TA = 85°C VGS = 4.0V ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = 5.0V VGS = 3.0V 0.6 VGS = 2.0V 0.4 TA = 125°C 0.1 TA = 25°C TA = 150°C TA = -55°C 0.01 0.2 VGS = 1.5V 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 VGS = 2.5V VGS = 4.5V 1.5 VGS = 10V 1 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 0.5 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.0 10 VGS = 5.0V T A = 150°C TA = 125°C 1 T A = -55°C TA = 85°C TA = 25°C 0.1 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1 1.6 3 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 0 0.001 0 5 3 RDSON , STATIC DRAIN-SOURCE, ON-RESISTANCE (Ω) NEW PRODUCT 0.8 VDS = 10V VGS = 2.5V VGS = 10V ID = 300mA 2 VGS = 10V ID = 150mA 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN313DLT Document number: DS35078 Rev. 2 - 2 1.4 1.2 1 ID = 1mA 0.8 0.6 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 3 of 5 www.diodes.com -25 August 2011 © Diodes Incorporated DMN313DLT 10 60 f=1MHz 50 8 45 40 CISS 35 VGS (V) CT, JUNCTION CAPACITANCE (pF) 30 25 VDS = 15V 6 ID = 800mA 4 20 15 2 10 COSS 5 CRSS 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Junction Capacitance 0 0 20 0.2 0.4 0.6 0.8 1 QG - (nC) Fig. 08 Gate Charge Characteristics 1.2 1 r(t) @ D=0.5 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 55 r(t) @ D=0.7 r(t) @ D=0.3 r(t) @ D=0.9 0.1 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 r(t) @ D=0.005 RθJA(t)=r(t) * RθJA RθJA=54°C/W Duty Cycle, D=t1/ t2 r(t) @ D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 9 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions A SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm B C G H K J DMN313DLT Document number: DS35078 Rev. 2 - 2 M N D L 4 of 5 www.diodes.com August 2011 © Diodes Incorporated DMN313DLT Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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