Analog Power AM4535C N & P-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 -30 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 18 @ VGS = 4.5V 12.5 @ VGS = -10V 19 @ VGS = -4.5V SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 TA=25°C 11.3 -10.6 ID Continuous Drain Current a TA=70°C 8.9 -8.3 b IDM Pulsed Drain Current 40 -40 a I 3.1 -2.9 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a ID (A) 11.3 8.8 -10.6 -8.6 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4535C_1A Analog Power AM4535C Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Symbol Test Conditions Static VDS = VGS, ID = 250 uA VGS(th) VDS = VGS, ID = -250 uA IGSS VDS = 0 V, VGS = ±20 V VDS = 24 V, VGS = 0 V IDSS VDS = -24 V, VGS = 0 V VDS = 5 V, VGS = 10 V ID(on) VDS = -5 V, VGS = -4.5 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A rDS(on) VGS = -10 V, ID = -8 A VGS = -4.5 V, ID = -6 A VDS = 15 V, ID = 12 A gfs VDS = -15 V, ID = -12 A IS = 1.6 A, VGS = 0 V VSD IS = -1.5 A, VGS = 0 V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min (Nch) (Pch) (Nch) (Pch) (Nch) (Pch) (Nch) (Nch) (Pch) (Pch) (Nch) (Pch) (Nch) (Pch) Dynamic b N - Channel VDS = 15 V, VGS = 4.5 V, ID = 2 A N - Channel VDS = 15 V, RL = 7.5 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -15 V, VGS = -4.5 V, ID = -2 A P - Channel VDS = -15 V, RL = 7.5 Ω, ID = -2 A, VGEN = -4.5 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 Typ Max 1 -1 ±100 1 -1 16 -15 Unit V V nA uA A A 11 18 12.5 19 40 28 0.72 -0.76 12 2.6 4.4 3 7 34 12 1935 182 200 28 8.1 8.5 7 9 91 35 2309 283 230 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM4535C_1A Analog Power AM4535C Typical Electrical Characteristics - N-channel 0.03 30 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 0.025 3.5V 0.02 4V 0.015 0.01 20 10 4.5V,6V,8V,10V 0.005 0 0 0 10 20 ID-Drain Current (A) 0 30 1 3 4 5 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.1 TJ = 25°C ID = 2A TJ = 25°C 0.08 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 30 3000 F = 1MHz 10V,8V, 6V,4.5V 2500 Ciss 4V 20 Capacitance (pf) ID - Drain Current (A) 0.2 3.5V 10 2000 1500 1000 Coss 500 0 Crss 0 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM4535C_1A Analog Power AM4535C Typical Electrical Characteristics - N-channel 2 VDS = 15V ID = 2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0 0.5 0 10 20 30 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 100 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC 1 0.1 DC Idm limit Limited by RDS 1 10 100 60 40 20 0 0.001 0.01 0.1 80 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 RθJA = 110 °C /W 0.1 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM4535C_1A Analog Power AM4535C Typical Electrical Characteristics - P-channel 15 TJ = 25°C 3V 0.03 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.04 3.5V 0.02 0.01 10 5 4V,4.5V,6V,8V,10V 0 0 0 5 10 ID-Drain Current (A) 0 15 1 1. On-Resistance vs. Drain Current 4 5 100 TJ = 25°C ID = -2A TJ = 25°C 0.08 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 0.1 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 3000 15 F = 1MHz 10V,8V,6V, 4.5V,4V Ciss 2500 3.5V 10 Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 3V 5 2000 1500 1000 Coss 500 Crss 0 0 0 0.1 0.2 0.3 0.4 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AM4535C_1A Analog Power AM4535C Typical Electrical Characteristics - P-channel 2 VDS = -15V ID = -2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 1.5 1 0.5 0 0 10 20 30 40 50 -50 60 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 120 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC 1 0.1 DC Idm limit Limited by RDS 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 RθJA = 110 °C /W 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM4535C_1A Analog Power AM4535C Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4535C_1A