AOD409/AOI409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD/I409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = -60V ID = -26A (VGS = -10V) RDS(ON) < 40mΩ (VGS = -10V) @ -20A RDS(ON) < 55mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested TO252 DPAK Top View TO-251A IPAK Bottom View Top View Bottom View D D D D D G S G S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Avalanche Current C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum -60 Units V ±20 V A -18 IAR -26 A EAR 33.8 mJ -60 60 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 30 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C D ID IDM PD TC=100°C TA=25°C Power Dissipation A S G -26 TC=100°C Pulsed Drain Current D S RθJA RθJC Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W AOD409/AOI409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 VDS=-48V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 VGS=-10V, ID=-20A TJ=125°C Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A gFS Forward Transconductance VSD IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=-5V, ID=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge -0.003 -1 V µA ±100 nA -1.9 -2.4 V 32 40 A 53 43 mΩ 55 mΩ -1 V -30 A 3600 pF 32 -0.73 2977 VGS=0V, VDS=-30V, f=1MHz Units -5 IGSS IS Max TJ=55°C VGS(th) RDS(ON) Typ S 241 pF 153 VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-20A pF 2 2.4 Ω 44 54 nC 22.2 28 nC Qgs Gate Source Charge 9 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω 14.5 ns 38 ns 15 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 40 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 59 50 ns nC A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 5: Jan 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V 25 VDS=-5V 25 -6V -5V 20 -ID(A) 20 -ID (A) 30 -4V 15 15 125°C -3.5V 10 10 5 5 25°C VGS=-3V 0 0 0 1 2 3 4 0 5 1 50 2 40 1.8 Normalized On-Resistance RDS(ON) (mΩ) 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 30 VGS=-10V 20 10 VGS=-10V ID=-20A 1.6 VGS=-4.5V ID=-20A 1.4 1.2 1 0 0 5 0.8 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 80 ID=-20A 125°C 1.0E+00 1.0E-01 125°C -IS (A) 60 RDS(ON) (mΩ) 50 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 40 1.0E-05 1.0E-06 20 0.0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS=-30V ID=-20A Ciss 3200 Capacitance (pF) -VGS (Volts) 8 3600 6 4 2800 2400 2000 1600 1200 Coss 800 2 Crss 400 0 0 0 5 10 15 20 25 30 35 40 45 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 50 30 TJ(Max)=175°C TC=25°C 1ms RDS(ON) limited 10ms DC TJ(Max)=175°C, TC=25°C 600 400 200 0 0.1 0.1 1 10 100 -VDS (Volts) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 800 Power (W) -ID (Amps) 100µs 1.0 10 1000 10µs 10.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 L ⋅ ID tA = BV − VDD 25 60 Power Dissipation (W) -ID(A), Peak Avalanche Current 30 20 15 TA=25°C 50 40 30 20 10 0 10 0.00001 0.0001 0 0.001 25 60 25 50 20 40 Power (W) Current rating -ID(A) 30 15 10 5 75 100 125 150 175 TA=25°C 30 20 10 0 0 0 25 50 75 100 125 150 175 0.001 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD409/AOI409 G ate C harge Test Circuit & W aveform Vgs Qg -10V + VD C - Q gs Vds Q gd + VD C D UT Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs VD C - DUT Vgs Rg t d (off) tr tf 90% Vdd + Vgs 10% Vds U nclam ped Inductive Sw itching (U IS) Test C ircuit & W aveform s 2 L E AR = 1/2 LIAR V ds V ds Id V DC - Vgs V gs + Rg B VD SS V dd Id I AR D UT V gs V gs D iode Recovery Test C ircuit & W aveform s Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VD C - -I F t rr dI/dt -I R M -V ds Vdd