AOSMD AOI409 P-channel enhancement mode field effect transistor Datasheet

AOD409/AOI409
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD/I409 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
VDS (V) = -60V
ID = -26A (VGS = -10V)
RDS(ON) < 40mΩ (VGS = -10V) @ -20A
RDS(ON) < 55mΩ (VGS = -4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
TO252
DPAK
Top View
TO-251A
IPAK
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Avalanche Current
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Maximum
-60
Units
V
±20
V
A
-18
IAR
-26
A
EAR
33.8
mJ
-60
60
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
30
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
D
ID
IDM
PD
TC=100°C
TA=25°C
Power Dissipation A
S
G
-26
TC=100°C
Pulsed Drain Current
D
S
RθJA
RθJC
Typ
16.7
40
1.9
°C
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
AOD409/AOI409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-60
VDS=-48V, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
VGS=-10V, ID=-20A
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-20A
gFS
Forward Transconductance
VSD
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
-0.003
-1
V
µA
±100
nA
-1.9
-2.4
V
32
40
A
53
43
mΩ
55
mΩ
-1
V
-30
A
3600
pF
32
-0.73
2977
VGS=0V, VDS=-30V, f=1MHz
Units
-5
IGSS
IS
Max
TJ=55°C
VGS(th)
RDS(ON)
Typ
S
241
pF
153
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-20A
pF
2
2.4
Ω
44
54
nC
22.2
28
nC
Qgs
Gate Source Charge
9
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
12
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-30V, RL=1.5Ω,
RGEN=3Ω
14.5
ns
38
ns
15
ns
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
40
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
59
50
ns
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 5: Jan 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD409/AOI409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-4.5V
-10V
25
VDS=-5V
25
-6V
-5V
20
-ID(A)
20
-ID (A)
30
-4V
15
15
125°C
-3.5V
10
10
5
5
25°C
VGS=-3V
0
0
0
1
2
3
4
0
5
1
50
2
40
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
VGS=-4.5V
30
VGS=-10V
20
10
VGS=-10V
ID=-20A
1.6
VGS=-4.5V
ID=-20A
1.4
1.2
1
0
0
5
0.8
10
15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
80
ID=-20A
125°C
1.0E+00
1.0E-01
125°C
-IS (A)
60
RDS(ON) (mΩ)
50
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
40
1.0E-05
1.0E-06
20
0.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOD409/AOI409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
VDS=-30V
ID=-20A
Ciss
3200
Capacitance (pF)
-VGS (Volts)
8
3600
6
4
2800
2400
2000
1600
1200
Coss
800
2
Crss
400
0
0
0
5
10
15
20
25 30 35 40 45
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
0
50
30
TJ(Max)=175°C
TC=25°C
1ms
RDS(ON)
limited
10ms
DC
TJ(Max)=175°C, TC=25°C
600
400
200
0
0.1
0.1
1
10
100
-VDS (Volts)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
800
Power (W)
-ID (Amps)
100µs
1.0
10
1000
10µs
10.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOD409/AOI409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
L ⋅ ID
tA =
BV − VDD
25
60
Power Dissipation (W)
-ID(A), Peak Avalanche Current
30
20
15
TA=25°C
50
40
30
20
10
0
10
0.00001
0.0001
0
0.001
25
60
25
50
20
40
Power (W)
Current rating -ID(A)
30
15
10
5
75
100
125
150
175
TA=25°C
30
20
10
0
0
0
25
50
75
100
125
150
175
0.001
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
1
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
AOD409/AOI409
G ate C harge Test Circuit & W aveform
Vgs
Qg
-10V
+
VD C
-
Q gs
Vds
Q gd
+
VD C
D UT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveform s
RL
Vds
t off
t on
td(on)
Vgs
VD C
-
DUT
Vgs
Rg
t d (off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
U nclam ped Inductive Sw itching (U IS) Test C ircuit & W aveform s
2
L
E AR = 1/2 LIAR
V ds
V ds
Id
V DC
-
Vgs
V gs
+
Rg
B VD SS
V dd
Id
I AR
D UT
V gs
V gs
D iode Recovery Test C ircuit & W aveform s
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VD C
-
-I F
t rr
dI/dt
-I R M
-V ds
Vdd
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