AOD4182 80V N-Channel MOSFET TM SDMOS General Description Product Summary The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS RDS(ON) (at VGS=10V) 80V 53A < 15.5mΩ RDS(ON) (at VGS=7V) < 20mΩ ID (at VGS=10V) 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Jan 2010 IAS, IAR 45 A EAS, EAR 101 mJ 100 Steady-State Steady-State W 50 2.5 RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s A 6.8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 8.5 PD TC=100°C A 85 IDSM TA=70°C V 38 IDM TA=25°C Continuous Drain Current Units V 53 ID TC=100°C Pulsed Drain Current Maximum 80 ±25 -55 to 175 Typ 16 40 1 °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 7 AOD4182 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=80V, VGS=0V 50 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.8 VGS=10V, VDS=5V 85 VGS=10V, ID=20A TJ=125°C VGS=7V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=40V, ID=20A Units V 10 TJ=55°C Static Drain-Source On-Resistance Max 80 IGSS RDS(ON) Typ µA 100 nA 3.3 4.2 V 12.5 15.5 22.5 28 16 20 mΩ 1 V 54 A A 33 0.7 mΩ S 1335 1670 2005 pF 150 215 280 pF 40 72 100 pF 0.35 0.75 1.2 Ω 22 28 34 nC 8.8 11 13 nC 5 8 11 nC 12 VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω ns 9 ns 20 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14.5 21 27.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 45.5 65 85 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Jan 2010 www.aosmd.com Page 2 of 7 AOD4182 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V 60 7V 60 ID(A) ID (A) VDS=5V 8V 80 6.5V 40 20 VGS=5.5V 0 1 2 3 125°C 20 6V 0 40 4 0 2 5 3 4 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 Normalized On-Resistance 2.4 18 VGS=7V 16 RDS(ON) (mΩ) 25°C 14 12 10 VGS=10V 8 6 VGS=10V ID=20A 2.2 2 1.8 17 5 2 VGS=7V 10 1.6 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 125°C 20 IS (A) RDS(ON) (mΩ) 1.0E+00 15 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOD4182 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=40V ID=20A 2000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1200 800 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 0.1 60 100µs DC 10ms 160 17 5 2 10 120 TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 80 0.0001 0.001 0.01 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=175°C TC=25°C Power (W) RDS(ON) limited 1.0 10 20 10µs 10µs 100.0 10.0 10 200 1000.0 ZθJC Normalized Transient Thermal Resistance Coss 400 0 ID (Amps) 1600 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan 2010 www.aosmd.com Page 4 of 7 AOD4182 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 TA=150°C 10.0 TA=125°C 1.0 100 80 60 40 20 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 175 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 17 5 2 10 100 10 10 0 0 25 50 75 100 125 150 1 0.00001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Jan 2010 www.aosmd.com Page 5 of 7 AOD4182 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 125ºC 10 6 125ºC 90 80 Qrr 70 5 10 15 20 25 S 0 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 8 Qrr 40 125ºC 6 25ºC 20 4 Irm 0 0 200 400 600 800 25 30 2 1000 2.5 Is=20A 2 25ºC 20 1.5 trr 15 1 10 25ºC 0.5 S 5 125º 0 0 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0: Jan 2010 20 25 Irm (A) Qrr (nC) 25ºC 60 15 125ºC 30 12 80 10 35 trr (ns) 125ºC 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 14 Is=20A 0.5 125ºC 30 100 1 25ºC 0 0 1.5 5 2 60 2 10 4 25ºC 2.5 25ºC trr 15 trr (ns) 100 Irm (A) 25ºC 125ºC 20 8 110 3 di/dt=800A/µs Irm 120 Qrr (nC) 25 S 130 di/dt=800A/µs S 12 140 www.aosmd.com 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOD4182 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Jan 2010 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7