PHILIPS BYC58X-600 8 a hyperfast rectifier diode Datasheet

BYC58X-600
8 A hyperfast rectifier diode
Rev. 01 — 23 February 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package
specifically for use in CCM PFC applications for reduced switching losses.
1.2 Features and benefits
„ Allows use of smaller MOSFETs and
heatsinks
„ Low thermal resistance
„ Isolated package
„ Reduces switching losses in
associated MOSFET
„ Low reverse recovery current
„ Superfast switching
1.3 Applications
„ Continuous Current Mode (CCM)
Power Factor Correction (PFC)
„ Power supply adapters
„ Desk top computer power supplies
„ Telecom power supplies
„ Server power supplies
„ Flat panel TV power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
600
V
VRRM
repetitive peak
reverse voltage
IF(AV)
average forward
current
square-wave pulse; δ = 0.5;
Th ≤ 93 °C; see Figure 1 and 2
-
-
8
A
IFSM
non-repetitive peak
forward current
Tj(init) = 25 °C; tp = 10 ms;
sine-wave pulse
-
-
110
A
Tj(init) = 25 °C; tp = 8.3 ms;
sine-wave pulse
-
-
120
A
with heatsink compound;
see Figure 3
-
2.5
3
K/W
Rth(j-h)
thermal resistance
from junction to
heatsink
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
Table 1.
Quick reference …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IF = 8 A; VR = 400 V;
dIF/dt = 200 A/µs; Tj = 25 °C;
see Figure 6
-
12.5
-
ns
IF = 8 A; VR = 400 V;
dIF/dt = 200 A/µs; Tj = 125 °C;
see Figure 6 and 7
-
21
-
ns
IF = 8 A; VR = 400 V;
dIF/dt = 200 A/µs; Tj = 125 °C;
see Figure 5 and 6
-
40
-
nC
IF = 8 A; Tj = 25 °C;
see Figure 4
-
2.35
3.2
V
IF = 8 A; Tj = 150 °C;
see Figure 4
-
2
2.4
V
Dynamic characteristics
trr
Qr
reverse recovery
time
recovered charge
Static characteristics
VF
forward voltage
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
1
K
cathode
Simplified outline
2
A
anode
mb
n.c.
mounting base; isolated
mb
Graphic symbol
K
A
001aaa020
1
2
SOD113 (TO-220F)
3. Ordering information
Table 3.
Ordering information
Type number
BYC58X-600
BYC58X-600_1
Product data sheet
Package
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
SOD113
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
2 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
600
V
VRWM
crest working reverse
voltage
-
600
V
IF(AV)
average forward
current
square-wave pulse; δ = 0.5; Th ≤ 93 °C; see Figure 1
and 2
-
8
A
IFRM
repetitive peak forward
current
square-wave pulse; δ = 0.5; tp = 25 µs
-
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C
-
110
A
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C
-
120
A
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
003aae164
28
Ptot
(W)
24
δ=1
66
Th(max)
(°C)
78
003aae165
20
a = 180°
Ptot
(W)
120
16
0.5
90
90
20
0.2
16
60
12
102
30
0.1
12
114
8
126
4
138
8
4
0
0
Fig 1.
4
8
IF(AV) (A)
150
12
Product data sheet
0
2
4
6
8
IF(AV) (A)
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYC58X-600_1
0
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
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Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
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BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance from
junction to heatsink
with heatsink compound; see Figure 3
-
2.5
3
K/W
Rth(j-a)
thermal resistance from
junction to ambient free air
in free air
-
55
-
K/W
003aac889
10
Zth(j-h)
(K/W)
1
10−1
P
10−2
t
tp
10−3
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 3.
Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to
external heatsink; sinusoidal waveform; clean
and dust free
-
-
2500
V
Cisol
isolation capacitance
f = 1 MHz; from cathode to external heatsink
-
10
-
pF
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
4 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
2.35
3.2
V
Static characteristics
VF
forward voltage
IF = 8 A; Tj = 25 °C; see Figure 4
IF = 8 A; Tj = 150 °C; see Figure 4
-
2
2.4
V
IR
reverse current
VR = 600 V; Tj = 25 °C
-
-
150
µA
Dynamic characteristics
Qr
recovered charge
IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs;
Tj = 125 °C; see Figure 5 and 6
-
40
-
nC
trr
reverse recovery time
IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs;
Tj = 25 °C; see Figure 6
-
12.5
-
ns
IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs;
Tj = 125 °C; see Figure 6 and 7
-
21
-
ns
IF = 8 A; VR = 400 V; dIF/dt = 200 A/µs;
Tj = 125 °C
-
4
5.5
A
peak reverse recovery
current
IRM
003aae163
20
IF
(A)
003aae182
140
Qr
(nC)
120
16
100
(1)
12
80
(1)
8
(2)
(3)
60
(2)
40
(3)
4
20
0
0
0
Fig 4.
1
2
3
VF (V)
4
Forward current as a function of forward
voltage
BYC58X-600_1
Product data sheet
0
Fig 5.
100
200
300
400
500
dIF/dt (A/μs)
Recovered charge as a function of rate of
change of forward current; Tj = 125 °C; typical
values
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Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
5 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
IF
dlF
003aae181
60
dt
trr
(ns)
trr
40
time
(1)
(2)
25 %
Qr
IR
(3)
20
100 %
IRM
003aac562
0
0
Fig 6.
Reverse recovery definitions; ramp recovery
BYC58X-600_1
Product data sheet
Fig 7.
100
200
300
400
500
dIF/dt (A/μs)
Recovered charge as a function of rate of
change of forward current; Tj = 125 °C; typical
values
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
6 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 'full pack'
SOD113
A
A1
E
z
P
q
m
T
D
HE
L2
j
L1(1)
k
Q
L
1
b1
2
b
w
c
M
e
0
10
z(2)
20 mm
scale
0.8
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
E
e
HE
max
j
k
L
L 1(1)
L2
max
m
P
Q
q
T
w
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
0.7
0.4
15.8
15.2
10.3
9.7
5.08
19.0
2.7
1.7
0.6
0.4
14.4
13.5
3.3
2.8
0.5
6.5
6.3
3.2
3.0
2.6
2.3
2.6
2.55
0.4
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
OUTLINE
VERSION
SOD113
Fig 8.
REFERENCES
IEC
JEDEC
JEITA
2-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
07-06-18
Package outline SOD113 (TO-220F)
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
7 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYC58X-600_1
20100223
Product data sheet
-
-
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
8 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
10. Legal information
10.1 Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
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suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BYC58X-600_1
Product data sheet
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
9 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BYC58X-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 23 February 2010
© NXP B.V. 2010. All rights reserved.
10 of 11
BYC58X-600
NXP Semiconductors
8 A hyperfast rectifier diode
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Isolation characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 February 2010
Document identifier: BYC58X-600_1
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