October 1997 FDC6302P Digital FET, Dual P-Channel General Description Features These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series. -25 V, -0.12 A continuous, -0.5 A Peak. R DS(ON) = 13 Ω @ VGS= -2.7 V R DS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. SOT-23 Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD SuperSOTTM-8 SuperSOTTM-6 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 TA = 25oC unless other wise noted FDC6302P Units -25 V -8 V - Continuous -0.12 A - Pulsed -0.5 Maximum Power Dissipation (Note 1a) 0.9 (Note 1b) 0.7 TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) W -55 to 150 °C 6.0 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 140 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W © 1997 Fairchild Semiconductor Corporation FDC6302P Rev.C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS mV /o C -20 -1 µA -10 µA -100 nA (Note 2) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance mV /o C 1.9 -0.65 -1 -1.5 V VGS = -2.7 V, ID = -0.05A 10.6 13 Ω VGS = -4.5 V, ID = -0.2 A 7.9 10 12 18 TJ =125°C ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID= -0.2 A -0.05 A 0.135 S 11 pF 7 pF 1.4 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = -6 V, ID = -0.2 A, VGS = -4.5 V, RGEN = 50 Ω VDS = -5 V, ID = - 0.2 A, VGS = -4.5 V 5 12 ns 8 16 ns 9 18 ns 5 10 ns 0.22 0.31 nC 0.12 nC 0.05 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.7 A (Note 2) -1 -0.7 A -1.3 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 140OC/W on a 0.125 in2 pad of 2oz copper. b. 180OC/W on a 0.005 in2 of pad of 2oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC6302P Rev.C 2 0.2 V GS = -5.0V -4.5 -4.0 -3.5 RDS(ON), NORMALIZED -3.0 0.15 -2.7 -2.5 0.1 -2.0 0.05 0 DRAIN-SOURCE ON-RESISTANCE -I D , DRAIN-SOURCE CURRENT (A) Typical Electrical Characteristics V GS = -2.0 V 1.5 -2.7 -3.0 1 1 2 3 -4.0 -3.5 -4.5 0.5 0 -2.5 4 0 0.05 ,DRAIN-SOURCE ON-RESISTANCE V GS = -2.7V 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 R DS(ON) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE (OHMS) I D = -0.05A ID = -0.05A TA= 25°C 20 125 °C 15 10 5 0 0 1 2 3 4 5 6 7 8 -V GS ,GATE TO SOURCE VOLTAGE (V) Figure 4. On Resistance Variation with Gate-To- Source Voltage. Figure 3. On-Resistance Variation with Temperature. -1 0.5 T = -55°C J -I , REVERSE DRAIN CURRENT (A) V DS = -5V 25°C -0.75 125°C -0.5 -0.25 VGS = 0V 0.1 T J = 125°C 25°C 0.01 -55°C S I D , DRAIN CURRENT (A) 0.2 25 1.6 0.6 -50 0.15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.4 0.1 -I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 0 -0.5 -1 -1.5 -2 -2.5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -3 0.0001 0 0.2 -V SD 0.4 0.6 0.8 1 , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6302P Rev.C Typical Electrical And Thermal Characteristics 25 I D = -0.2A VDS = -5V 15 -10 6 -15 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 8 4 2 C iss 10 Coss 5 3 2 0 0 0.1 0.2 0.3 0.4 f = 1 MHz V GS = 0 V 1 0.1 0.5 Q g , GATE CHARGE (nC) 1m RD S( IT 10 0m m s VGS = -2.7V SINGLE PULSE R θJA =See Note 1b TA = 25°C 0.02 0.01 1 2 15 25 SINGLE PULSE RθJA =See note 1b TA = 25°C 4 s DC 0.05 10 5 1s 0.1 5 s POWER (W) 10 3 2 1 5 10 20 0 0.01 40 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID , DRAIN CURRENT (A) 0.5 0.2 2 Figure 8. Capacitance Characteristics. 0.8 ) ON 1 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. LIM Crss 0.3 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 0.0001 RθJA (t) = r(t) * R θJA R θJA = See Note 1b 0.1 P(pk) 0.05 t1 0.02 0.01 Single Pulse 0.001 t2 TJ - TA = P * R JA(t) θ Duty Cycle, D = t 1/ t 2 0.01 0.1 1 10 100 300 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC6302P Rev.C