DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) Drain D Gate TOP VIEW Maximum Ratings S G Source Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State Units V V IDM Value 20 ±12 6.4 4.5 30 Symbol PD RθJA TJ, TSTG Value 0.78 161 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 4) A A Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMN2041L Document number: DS31962 Rev. 1 - 2 1 of 6 www.diodes.com September 2009 © Diodes Incorporated DMN2041L @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 - 1.2 V RDS (ON) - 20 26 28 41 mΩ |Yfs| VSD - 6 0.7 1.2 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A VGS = 0V, IS = 1.7A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 550 88 81 1.34 15.6 7.2 1.0 1.9 4.69 13.19 22.10 6.43 - pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω nC VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 10V, ID = 6A nC VGS = 4.5V, VDS = 10V, ID = 6A ns VDD = 10V, VGEN = 4.5V, RGEN = 1Ω, ID = 6.7A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 20 VGS = 10V VDS = 5V VGS = 2.0V 16 VGS = 4.5V 16 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = 2.5V 12 12 8 4 VGS = 1.5V 8 T A = 150°C TA = 125°C 4 TA = 85°C T A = 25°C TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN2041L Document number: DS31962 Rev. 1 - 2 5 2 of 6 www.diodes.com 0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 September 2009 © Diodes Incorporated 0.05 0.04 VGS = 1.8V 0.03 VGS = 2.5V 0.02 VGS = 10V VGS = 4.5V 0.01 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 10A VGS = 2.5V ID = 5.0A 1.2 VGS = 4.5V 0.04 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0 20 1.6 1.4 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.06 0 1.0 0.8 0.6 -50 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.08 0.06 0.04 VGS = 2.5V ID = 5.0A 0.02 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature VGS = 4.5V ID = 10A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 20 1.6 1.4 16 1.2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN2041L 1.0 ID = 1mA 0.8 0.6 ID = 250µA 0.4 12 T A = 25°C 8 4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMN2041L Document number: DS31962 Rev. 1 - 2 3 of 6 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 September 2009 © Diodes Incorporated DMN2041L 1,000 10,000 f = 1MHz TA = 150°C IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT C, CAPACITANCE (pF) Ciss Coss 100 Crss 1,000 TA = 125°C 100 TA = 85°C 10 T A = -55°C TA = 25°C 1 10 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 2 20 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA (t) = r(t) * R θJA RθJA = 160°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMN2041L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information MN9 Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMN2041L Document number: DS31962 Rev. 1 - 2 Mar 3 MN9 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 4 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D September 2009 © Diodes Incorporated DMN2041L Package Outline Dimensions NEW PRODUCT A SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Y Z C X DMN2041L Document number: DS31962 Rev. 1 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com September 2009 © Diodes Incorporated DMN2041L IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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