CREE C460TR5270-SXX000-3 Maximum dc forward current - 250 ma class 2 esd rating Datasheet

TR5270™ LEDs
CxxxTR5270-Sxx00 (175-μm)
CxxxTR5270-Sxx00-3 (250-μm)
Data Sheet
Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5270 LEDs are among the brightest in the top-view market while delivering
a low forward voltage, resulting in a very bright and highly efficient solution. The TR5270 is available in two chip
thicknesses: 175 µm and 250 µm. The 250-µm-thick version offers 5% improvement brightness over the 175-µm
version due the increased bevel area. The design is optimally suited for industry-standard top-view packages.
FEATURES
APPLICATIONS
•
•
Rectangular LED RF Performance
–
450 nm – 200 mW min
–
460 nm – 180 mW min
Large LCD Backlighting
–
Television
•
General Illumination
•
Medium LCD Backlighting
•
Adhesive Die Attach
•
Low Forward Voltage – 3.2 V Typical at 120 mA
–
Portable PCs
•
Maximum DC Forward Current - 250 mA
–
Monitors
•
Class 2 ESD Rating
•
LED Video Displays
•
InGaN Junction on Thermally Conductive SiC
•
White LEDs
Substrate
CxxxTR5270-Sxx00 (175-µm) Chip Diagram
.CPR3ET Rev
Data Sheet:
Top View
Die Cross Section
Cathode (-)
98-μm diameter
TR5270 LED
520 x 700 μm
Anode (+)
90-μm diameter
Bottom Surface
347 x 527 μm
Bottom View
t = 175 μm
Subject to change without notice.
www.cree.com
1
CxxxTR5270-Sxx00-3 (250-µm) Chip Diagram
Top View
Die Cross Section
Bottom View
Cathode (-)
98-μm diameter
TR5270 LED
520 x 700 μm
Anode (+)
90-μm diameter
Bottom Surface
260 x 440 μm
t = 250 μm
Mechanical Specifications
Description
CxxxTR5270-Sxx00 (175-µm)
Dimension
Tolerance
P-N Junction Area (μm)
450 x 640
±35
Chip Area (μm)
520 x 700
±35
175
±15
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
98
±10
347 x 527
±35
Au Bond Pad Diameter Cathode (μm)
Bottom Area (μm)
Mechanical Specifications
CxxxTR5270-Sxx00-3 (250-µm)
Description
Dimension
Tolerance
P-N Junction Area (μm)
450 x 640
±35
Chip Area (μm)
520 x 700
±35
250
±15
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
98
±10
260 x 440
±45
Au Bond Pad Diameter Cathode (μm)
Bottom Area (μm)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
2
CPR3ET Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1, 3 & 4
CxxxTR5270-Sxx00 and CxxxTR5270-Sxx00-3
DC Forward Current
250 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
300 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA
Part Number
Forward Voltage (Vf, V)
Min.
C450TR5270-Sxx000
C460TR5270-Sxx000
C450TR5270-Sxx000-3
C460TR5270-Sxx000-3
Notes:
1.
2.
3.
4.
Typ.
Max
2.7 If (mA)
3.2
2.7
3.2
Max Vf @Max
If (V)
2.7
3.2
Max Tj (Deg C)
2.7
3.2
Max Power
(W)
Thermal Resistance (C/W)
Max.
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Max.
Typ.
250
3.5
2
20
3.5
3.5
2
21
3.5
150
2
20
3.5
0.875
2
21
10
20
30
Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for
characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations.
Assembly processing temperature
must not exceed 325°C (<Rth
5 seconds).
(j-A) =
If @ Tamb
Tamb
Tamb
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
250 to approximate the maximum 25
25
25
The RAET procedures are designed
ESD ratings shown.
All products conform to the listed
assembled and operated at 120
250minimum and maximum specifications
141.25 for electrical and optical
132.5characteristics when123.75
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
0 quantities and are provided for
150
150
150lamps in T-1 3/4 packages
expected by manufacturer in large
information only. All measurements
were made using
(with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
Maximum Forward Current (mA)
300
250
200
150
Rth j-a = 10
Rth j-a = 20
Rth j-a = 30
Rth j-a = 40
100
50
C/W
C/W
C/W
C/W
0
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
3
CPR3ET Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR5270-Sxx00
Radiant Flux (mW)
Radiant Flux (mW)
Radiant Flux (mW)
Radiant Flux (mW)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR5270-Sxxxx or CxxxTR5270-Sxxxx-3 ) orders may be filled with any or all bins
(CxxxTR5270-xxxx or CXXXTR5270-xxxx-3) contained in the kit. All radiant flux and dominant wavelength values shown
and specified are at If = 120 mA.
C450TR5270-S20000 (175-µm thick)
C450TR5270-0209
C450TR5270-0210
C450TR5270-0211
C450TR5270-0212
C450TR5270-0205
C450TR5270-0206
C450TR5270-0207
C450TR5270-0208
220
200
445
447.5
450
Dominant Wavelength (nm)
452.5
455
C460TR5270-S18000 (175-µm thick)
C460TR5270-0205
C460TR5270-0206
C460TR5270-0207
C460TR5270-0208
C460TR5270-0201
C460TR5270-0202
C460TR5270-0203
C460TR5270-0204
200
180
455
457.5
460
462.5
465
Dominant Wavelength (nm)
C450TR5270-S21000-3 (250-µm thick)
C450TR5270-0309-3
C450TR5270-0310-3
C450TR5270-0311-3
C450TR5270-0312-3
C450TR5270-0305-3
C450TR5270-0306-3
C450TR5270-0307-3
C450TR5270-0308-3
230
210
445
447.5
450
452.5
455
Dominant Wavelength (nm)
C460TR5270-S19000-3 (250-µm thick)
C460TR5270-0305-3
C460TR5270-0306-3
C460TR5270-0307-3
C460TR5270-0308-3
C460TR5270-0301-3
C460TR5270-0302-3
C460TR5270-0303-3
C460TR5270-0304-3
210
190
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
4
CPR3ET Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the TR5270 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
Relative Light Intensity Vs Junction Temperature
200%
100%
Relative Light Intensity
Relative Light Intensity
175%
150%
125%
100%
75%
50%
25%
0%
95%
90%
85%
80%
75%
70%
0
62.5
125
187.5
250
25
50
If (mA)
2
1
0
-1
-2
-3
62.5
125
150
187.5
5
4
3
2
1
0
-1
-2
25
250
50
75
100
125
150
Junction Temperature (°C)
Forward Current vs. Forward Voltage
Voltage Shift Vs Junction Temperature
200
0
175
-0.050
150
-0.100
Voltage Shift (V)
If (mA)
125
6
If (mA)
125
100
75
50
25
-0.150
-0.200
-0.250
-0.300
-0.350
0
-0.400
0
1
2
Vf (V)
3
4
25
50
75
CPR3ET Rev. -
100
125
150
Junction Temperature (°C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
5
100
Dominant Wavelength Shift Vs Junction Temperature
Dominant Wavelength Shift (nm)
Dominant Wavelength Shift (nm)
Wavelength Shift vs. Forward Current
3
0
75
Junction Temperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
Far Fields – TR430
This is a representative radiation pattern for the TR5270 (175-µm) LED product. Actual patterns will vary slightly for
each chip.
This is a representative radiation pattern for the TR5270 (250-µm) LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2010, Cree, Inc. (Confidential)
pg. 1
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
6
CPR3ET Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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