BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT23 case with type designation DZ23 series. • The Zener voltages are graded according to the international E 24 standard. 17431 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation Ptot 5002) mW Power dissipation Ptot 1) mW Zener current see table " Characteristics " 1) Diode on ceramic substrate 0.7 mm; 2.5 mm pad areas 2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas 410 2 Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 3001) °C/W Junction temperature TJ 150 °C Storage temperature range TS - 65 to + 150 °C Thermal resistance junction to ambient air 1) Valid provided that electrodes are kept at ambient temperature Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 1 BZT52-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Dynamic Resistance Range1) VZ @ IZT1 rzj @ IZT1 rzj @ IZT2 Ω V Test Current Temp. Coefficient Reverse Voltage Admissible Zener IZT1 @ IZT1 V R @ IR = 100 nA, IZ @ Tamb = 45 °C, αVZ V mA Current4) IZ @ Tamb = 25 °C, mA (10-4/°C) min max BZT52C2V4-V W1 2.2 2.6 85 600 5 - 9 to - 4 - - - BZT52C2V7-V W2 2.5 2.9 75 (< 83) < 500 5 - 9 to - 4 - 113 134 BZT52C3V0-V W3 2.8 3.2 80 (< 95) < 500 5 - 9 to - 3 - 98 118 BZT52C3V3-V W4 3.1 3.5 80 (< 95) < 500 5 - 8 to - 3 - 92 109 BZT52C3V6-V W5 3.4 3.8 80 (< 95) < 500 5 - 8 to - 3 - 85 100 BZT52C3V9-V W6 3.7 4.1 80 (< 95) < 500 5 - 7 to - 3 - 77 92 BZT52C4V3-V W7 4 4.6 80 (< 95) < 500 5 - 6 to - 1 - 71 84 BZT52C4V7-V W8 4.4 5 70 (< 78) < 500 5 - 5 to +2 - 64 76 BZT52C5V1-V W9 4.8 5.4 30 (< 60) < 480 5 - 3 to +4 > 0.8 56 67 BZT52C5V6-V WA 5.2 6 10 (< 40) < 400 5 - 2 to +6 >1 50 59 BZT52C6V2-V WB 5.8 6.6 4.8 (< 10) < 200 5 - 1 to +7 >2 45 54 BZT52C6V8-V WC 6.4 7.2 4.5 (< 8) < 150 5 +2 to +7 >3 41 49 BZT52C7V5-V WD 7 7.9 4 (< 7) < 50 5 +3 to +7 >5 37 44 BZT52C8V2-V WE 7.7 8.7 4.5 (< 7) < 50 5 +4 to +7 >6 34 40 BZT52C9V1-V WF 8.5 9.6 4.8 (< 10) < 50 5 +5 to +8 >7 30 36 BZT52C10-V WG 9.4 10.6 5.2 (< 15) < 70 5 +5 to +8 > 7.5 28 33 BZT52C11-V WH 10.4 11.6 6 (< 20) < 70 5 +5 to +9 > 8.5 25 30 BZT52C12-V WI 11.4 12.7 7 (< 20) < 90 5 +6 to +9 >9 23 28 BZT52C13-V WK 12.4 14.1 9 (< 25) < 110 5 +7 to +9 > 10 21 25 BZT52C15-V WL 13.8 15.6 11 (< 30) < 110 5 +7 to +9 > 11 19 23 BZT52C16-V WM 15.3 17.1 13 (< 40) < 170 5 +8 to +9.5 > 12 17 20 BZT52C18-V WN 16.8 19.1 18 (< 50) < 170 5 +8 to +9.5 > 14 15 18 BZT52C20-V WO 18.8 21.2 20 (< 50) < 220 5 +8 to +10 > 15 14 17 BZT52C22-V WP 20.8 23.3 25 (< 55) < 220 5 +8 to +10 > 17 13 16 BZT52C24-V WR 22.8 25.6 28 (< 80) < 220 5 +8 to +10 > 18 11 13 BZT52C27-V WS 25.1 28.9 30 (< 80) < 250 5 +8 to +10 > 20 10 12 BZT52C30-V WT 28 32 35 (< 80) < 250 5 +8 to +10 > 22.5 9 10 BZT52C33-V WU 31 35 40 (< 80) < 250 5 +8 to +10 > 25 8 9 BZT52C36-V WW 34 38 40 (< 90) < 250 5 +8 to +10 > 27 8 9 BZT52C39-V WX 37 41 50 (< 90) < 300 5 +10 to +12 > 29 7 8 BZT52C43-V WY 40 46 60 (< 100) < 700 5 +10 to +12 > 32 6 7 BZT52C47-V WZ 44 50 70 (< 100) < 750 5 +10 to +12 > 35 5 6 BZT52C51-V X1 48 54 70 (< 100) < 750 5 +10 to +12 > 38 5 6 BZT52C56-V X2 52 60 < 135 BZT52C62-V X3 58 66 BZT52C68-V X4 64 72 < 200 BZT52C75-V X5 70 79 < 250(2) (3) < 1000 2.5 typ. +10 (2) - - - < 150(2) < 1000(3) 2.5 typ. +10(2) - - - (2) (3) < 1000 2.5 typ. +10 (2) - - - < 1500(3) 2.5 typ. +10(2) - - - (2) IZT1 = 5 mA, IZT2 = 1 mA (1) Measured with pulses Tp = 5 ms (2) = IZT1 = 2.5 mA (3) = IZT2 = 0.5 mA (4) Valid provided that electrodes are kept at ambient temperature. www.vishay.com 2 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Dynamic Resistance Range1) VZ @ IZT1 rzj @ IZT1 rzj @ IZT2 Ω V Test Current Temp. Coefficient Reverse Voltage Admissible Zener IZT1 @ IZT1 V R @ IR = 100 nA, IZ @ Tamb = 45 °C, αVZ V mA Current4) IZ @ Tamb = 25 °C, mA (10-4/°C) min max BZT52B2V4-V W1 2.35 2.45 85 600 5 - 9 to - 4 - - - BZT52B2V7-V W2 2.65 2.75 75 (< 83) < 500 5 - 9 to - 4 - 113 134 BZT52B3V0-V W3 2.94 3.06 80 (< 95) < 500 5 - 9 to - 3 - 98 118 BZT52B3V3-V W4 3.23 3.37 80 (< 95) < 500 5 - 8 to - 3 - 92 109 BZT52B3V6-V W5 3.53 3.67 80 (< 95) < 500 5 - 8 to - 3 - 85 100 BZT52B3V9-V W6 3.82 3.98 80 (< 95) < 500 5 - 7 to - 3 - 77 92 BZT52B4V3-V W7 4.21 4.39 80 (< 95) < 500 5 - 6 to - 1 - 71 84 BZT52B4V7-V W8 4.61 4.79 70 (< 78) < 500 5 - 5 to + 2 - 64 76 BZT52B5V1-V W9 5 5.2 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67 BZT52B5V6-V WA 5.49 5.71 10 (< 40) < 400 5 - 2 to + 6 >1 50 59 BZT52B6V2-V WB 6.08 6.32 4.8 (< 10) < 200 5 - 1 to + 7 >2 45 54 BZT52B6V8-V WC 6.66 6.94 4.5 (< 8) < 150 5 + 2 to + 7 >3 41 49 BZT52B7V5-V WD 7.35 7.65 4 (< 7) < 50 5 + 3 to + 7 >5 37 44 BZT52B8V2-V WE 8.04 8.36 4.5 (< 7) < 50 5 + 4 to + 7 >6 34 40 BZT52B9V1-V WF 8.92 9.28 4.8 (< 10) < 50 5 + 5 to + 8 >7 30 36 BZT52B10-V WG 9.8 10.2 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33 BZT52B11-V WH 10.8 11.2 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30 BZT52B12-V WI 11.8 12.2 7 (< 20) < 90 5 + 6 to + 9 >9 23 28 BZT52B13-V WK 12.7 13.3 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25 BZT52B15-V WL 14.7 15.3 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23 BZT52B16-V WM 15.7 16.3 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20 BZT52B18-V WN 17.6 18.4 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18 BZT52B20-V WO 19.6 20.4 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17 BZT52B22-V WP 21.6 22.4 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16 BZT52B24-V WR 23.5 24.5 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13 BZT52B27-V WS 26.5 27.5 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12 BZT52B30-V WT 29.4 30.6 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10 BZT52B33-V WU 32.3 33.7 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9 BZT52B36-V WW 35.3 36.7 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9 BZT52B39-V WX 38.2 39.8 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8 BZT52B43-V WY 42.1 43.9 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7 BZT52B47-V WZ 46.1 47.9 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6 BZT52B51-V X1 50 52 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6 BZT52B56-V X2 54.9 57.1 < 135 BZT52B62-V X3 60.8 63.2 BZT52B68-V X4 66.6 69.4 < 200 BZT52B75-V X5 73.5 76.5 < 250(2) (3) < 1000 2.5 (2) typ. + 10 - - - < 150(2) < 1000(3) 2.5 typ. + 10(2) - - - (2) (3) < 1000 2.5 (2) typ. + 10 - - - < 1500(3) 2.5 typ. + 10(2) - - - (2) IZT1 = 5 mA, IZT2 = 1 mA 1) Measured with pulses Tp = 5 ms 2) = IZT1 = 2.5 mA 3) = IZT2 = 0.5 mA 4) Valid provided that electrodes are kept at ambient temperature. Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 3 BZT52-V-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 18117 18114 Figure 1. Forward characteristics 18888 Figure 4. Dynamic Resistance vs. Zener Current 18118 Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 5. Capacitance vs. Zener Voltage °C 18116 Figure 3. Pulse Thermal Resistance vs. Pulse Duration www.vishay.com 4 18119 Figure 6. Dynamic Resistance vs. Zener Current Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors °C , = 18135 18120 Figure 7. Dynamic Resistance vs. Zener Current Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage °C/W 18124 18121 Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature °C 18122 18136 Figure 9. Dynamic Resistance vs. Zener Voltage Document Number 85760 Rev. 1.5, 21-Apr-05 Figure 12. Temperature Dependence of Zener Voltage vs. Zener Voltage www.vishay.com 5 BZT52-V-Series Vishay Semiconductors 18158 Figure 13. Change of Zener Voltage vs. Junction Temperature 18159 Figure 14. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage 18160 Figure 15. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors 18111 Figure 16. Breakdown Characteristics 18112 Figure 17. Breakdown Characteristics Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 7 BZT52-V-Series Vishay Semiconductors 18157 Figure 18. Breakdown Characteristics Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.55 (0.022) 0.15 (0.006) max. Mounting Pad Layout Cathode Band 2.40 (0.094) 2.55 (0.100) 2.85 (0.112) 3.55 (0.140) 3.85 (0.152) ISO Method E 1.40 (0.055) 1.70 (0.067) 0.72 (0.028) 17432 1.40 (0.055) www.vishay.com 8 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1