BSM50GD60DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type VCE IC Package Ordering Code BSM50GD60DN2E3226 600V 50A ECONOPACK 2 C67070-A2515-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 600 Unit V 600 Gate-emitter voltage VGE DC collector current IC TC = 25 °C ± 20 A 50 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 100 Ptot Power dissipation per IGBT TC = 25 °C W 200 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.6 Diode thermal resistance, chip case RthJCD ≤ 1.5 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 + 150 °C -55 ... + 150 K/W sec 55 / 150 / 56 Jan-10-1997 BSM50GD60DN2E3226 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 1 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 50 A, Tj = 25 °C - 2.1 2.7 VGE = 15 V, IC = 50 A, Tj = 125 °C - 2.2 2.8 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current mA - - 1.5 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 50 A Input capacitance 10 nF - 2.8 - - 0.3 - - 0.2 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jan-10-1997 BSM50GD60DN2E3226 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Ω Rise time - 60 - - 80 - - 330 - - 550 - tr VCC = 300 V, VGE = 15 V, IC = 50 A RGon = 22 Ω Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Ω Fall time tf VCC = 300 V, VGE = -15 V, IC = 50 A RGoff = 22 Ω Free-Wheel Diode Diode forward voltage VF V IF = 50 A, VGE = 0 V, Tj = 25 °C - 2 - IF = 50 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 50 A, VR = -300 V, VGE = 0 V diF/dt = -500 A/µs, Tj = 125 °C Reverse recovery charge - 0.2 - Qrr µC IF = 50 A, VR = -300 V, VGE = 0 V diF/dt = -500 A/µs Tj = 25 °C - 2.8 - Tj = 125 °C - 5 - Semiconductor Group 3 Jan-10-1997 BSM50GD60DN2E3226 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 220 W Ptot A 180 IC tp = 16.0µs 10 2 160 140 100 µs 120 10 1 100 1 ms 80 60 10 0 10 ms 40 DC 20 0 0 20 40 60 80 100 120 °C 10 -1 0 10 160 10 1 10 2 V 10 TC 3 VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 50 A K/W IC 40 ZthJC 35 10 -1 30 25 D = 0.50 0.20 20 10 -2 0.10 15 0.05 0.02 10 0.01 single pulse 5 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jan-10-1997 BSM50GD60DN2E3226 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C IC 100 100 A A 80 70 17V 15V 13V 11V 9V 7V IC 80 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 100 A IC 80 70 60 50 40 30 20 10 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jan-10-1997 BSM50GD60DN2E3226 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 50 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 Ciss C 100 V 14 300 V 10 0 12 10 Coss Crss 8 10 -1 6 4 2 0 0 20 40 60 80 100 120 10 -2 0 160 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 6 0 100 200 300 400 500 600 V 800 VCE Jan-10-1997 BSM50GD60DN2E3226 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 300 V, VGE = ± 15 V, IC = 50 A 10 3 10 3 tdoff tf t tf t ns ns tdoff tr tdon tr 10 2 10 2 tdon 10 1 0 20 40 60 80 100 A IC 10 1 0 140 20 40 60 80 Ω 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 22 Ω par.: VCE = 300V, VGE = ± 15 V, IC = 50 A 10 10 Eoff mWs E mWs 8 E 8 7 7 6 6 Eoff Eon 5 5 4 4 3 3 2 2 1 1 0 0 20 40 Semiconductor Group 60 80 100 A IC 140 7 0 0 Eon 20 40 60 80 Ω 120 RG Jan-10-1997 BSM50GD60DN2E3226 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 1 100 A IF Diode K/W 80 ZthJC 10 0 70 60 10 -1 50 D = 0.50 0.20 40 Tj=125°C 0.10 Tj=25°C 30 0.05 10 -2 20 0.02 single pulse 0.01 10 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -3 -5 10 8 Jan-10-1997 BSM50GD60DN2E3226 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g Semiconductor Group 9 Jan-10-1997