Diodes FCX790A Sot89 pnp silicon power (switching) transistor Datasheet

SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
FCX790A
ISSUE 3 - OCTOBER 2005
FEATURES
*
2W POWER DISSIPATION
*
*
*
6A Peak Pulse Current
Excellent HFE Characteristics
Low Saturation Voltages
Partmarking Detail -
C
E
790
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current **
ICM
-6
A
Continuous Collector Current
IC
-2
A
Power Dissipation at Tamb=25°C
Ptot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
† recommended Ptot calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
FCX790A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-50
TYP.
MAX.
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO
-40
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-0.1
µA
VCB=-30V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-250
-350
-450
mV
mV
mV
IC=-0.5A, IB=-5mA*
IC=-1A, IB=-10mA*
IC=-2A, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
300
250
200
150
Transition Frequency
fT
100
-0.8
800
IC=-10mA, VCE=-2V
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Cibo
225
pF
VEB=-0.5V, f=1MHz
Output Capacitance
Cobo
24
pF
VCB=-10V, f=1MHz
Switching Times
ton
toff
35
600
ns
ns
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
FCX790A
TYPICAL CHARACTERISTICS
1.8
1.6
1.8
IC/IB=100
IC/IB=40
IC/IB=10
Tamb=25°C
1.6
1.4
VCE(sat) - (Volts)
VCE(sat) - (Volts)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
1
1.0
0.8
0.6
0.4
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
VCE=2V
1.6
750
1.0
500
0.8
0.6
250
0.4
1.4
VBE(sat) - (Volts)
1.2
hFE - Typical Gain
1.4
10
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.6
hFE - Normalised Gain
1.2
0
0.01
0.2
-55°C
+25°C
+100°C
+175°C
IC/IB=100
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
1
0
1
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
VCE=2V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
1.6
0.01
IC - Collector Current (Amps)
10
VBE - (Volts)
IC/IB=100
0.2
0
0
-55°C
+25°C
+100°C
+175°C
0.01
0.1
1
IC - Collector Current (Amps)
VBE(on) v IC
10
10
Single Pulse Test at Tamb=25°C
1
0.1
0.01
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
1
10
VCE - Collector Voltage (Volts)
Safe Operating Area
100
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