SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR FCX790A ISSUE 3 - OCTOBER 2005 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Excellent HFE Characteristics Low Saturation Voltages Partmarking Detail - C E 790 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ** ICM -6 A Continuous Collector Current IC -2 A Power Dissipation at Tamb=25°C Ptot 1 † 2 ‡ W W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † recommended Ptot calculated using FR4 measuring 15x15x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions when soldering surface mount components. FCX790A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -50 TYP. MAX. V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 µA VCB=-30V Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -250 -350 -450 mV mV mV IC=-0.5A, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-1A, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 250 200 150 Transition Frequency fT 100 -0.8 800 IC=-10mA, VCE=-2V IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* MHz IC=-50mA, VCE=-5V f=50MHz Input Capacitance Cibo 225 pF VEB=-0.5V, f=1MHz Output Capacitance Cobo 24 pF VCB=-10V, f=1MHz Switching Times ton toff 35 600 ns ns IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FCX790A TYPICAL CHARACTERISTICS 1.8 1.6 1.8 IC/IB=100 IC/IB=40 IC/IB=10 Tamb=25°C 1.6 1.4 VCE(sat) - (Volts) VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 1 1.0 0.8 0.6 0.4 0.01 0.1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC VCE=2V 1.6 750 1.0 500 0.8 0.6 250 0.4 1.4 VBE(sat) - (Volts) 1.2 hFE - Typical Gain 1.4 10 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 hFE - Normalised Gain 1.2 0 0.01 0.2 -55°C +25°C +100°C +175°C IC/IB=100 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 10 1 0 1 hFE v IC VBE(sat) v IC -55°C +25°C +100°C VCE=2V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) 1.6 0.01 IC - Collector Current (Amps) 10 VBE - (Volts) IC/IB=100 0.2 0 0 -55°C +25°C +100°C +175°C 0.01 0.1 1 IC - Collector Current (Amps) VBE(on) v IC 10 10 Single Pulse Test at Tamb=25°C 1 0.1 0.01 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 10 VCE - Collector Voltage (Volts) Safe Operating Area 100