TiEU ^£,mL-C-.ona.uatoi , One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 INVERTER THYRISTOR C458 53nm / 1400V / 2000Arrns / 35us Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially available heat dissipators and mechanical clamping hardware. ON-STATE CHARACTERISTICS MODEL V DRM '/ VRRM Oto+125°C C458PD 1400 1300 C458PB 1200 1100 C458P 1000 900 Y @ -40°C volts Gate Drive Requirements: 20 V / 20 ohms / O.Sus risetime 5 - 10 us minimum duration External Clamping Force 5000 - 6000 Ibs. 24.5 - 26.7 kN GMMM1 <A> MECHANICAL OUTLINE THERMAL IMPEDANCE 20° ±5° B 0 • = 2.96 in (75.2 iraj = 1.90 in (48.3 ion) 1.0T7 in (27.2 ran) [lziiE.iiJ ^£mL~(Lona.uctoi tJ^toaucti, tine. Cs 20 STERN AVE. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SPRINGFIELD, NEW JERSEY 07081 U.S.A. C458 LIMITING CHARACTERISTICS PARAMETER TEST CONDITIONS LIMIT UNITS Repetitive peak offstate & reverse voltage VDRM^RR T, = -40 to+125"C up to 1400V volts Off-state & re verse current IDRM/IRRM T = 125"C 65 ma Peak half cycle non-repetitive ITSM 60Hz (8,3ms) 50Hz(10ms) 16 14.6 kA Forfusing I2t 8.3ms 1.06 MA2s On-state voltage V^ IT = 4000A t p = 8.3ms T = 25°C 2.6 volts Critical rate of rise of on-state current di/dt 400 A/us Critical rate of rise of off-state voltage dv/dt 500 v/us Reverse recovery charge QRR surge current Circuit commutated turn-off time 60Hz Tj=125"C T. = 125"C tQ .T^ 125°C VR>-50V @ 100 A/us 400 uC 200V/US to 80% V D Vr= -50 V us 35 MUK mm won* i,»> Quality Semi-Conductors