First Sensor APD Data Sheet Part Description AD800-11 TO Order # 500970 Version 20-06-11 Features Description Application RoHS • ø 800 µm active area • High QE for λ = 350-750 nm • Low noise • Fast rise time Circular active area APD chip with blue enhanced sensitivity. Metal can type hermetic TO52 package with UV glass window. • Analytical equipment • Scintillation • Medical equipment • High speed photometry 2002/95/EC Absolute maximum ratings Spectral response (M = 100) Parameter Storage temp Operating temp Gain (IP0 = 1 nA) Peak DC current Min -55 -40 200 Max 125 85 Unit °C °C 40 35 30 0.25 Responsivity (A/W) Symbol TSTG TOP Mmax IPEAK mA Schematic PIN 3 PIN 4 25 20 15 10 5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 Wavelength (nm) PIN 1 Electro-optical characteristics @ 23 °C Symbol ID C tR VBR Characteristic Active area Active area Dark current Capacitance Responsivity Responsivity Rise time Cut-off frequency Breakdown voltage Temperature coefficiant Excess noise factor Excess noise index European, International Sales: Test Condition M = 100 M = 100 M = 100; λ = 410 nm M = 100; λ = 500 nm M = 100; λ = 410 nm; RL = 50 Ω -3dB IR = 2 µA, VBR - binning available Change of VBR with temperature M = 100 M = 100 First Sensor AG Peter-Behrens-Strasse 15 12459 Berlin Germany Phone: +49-30-6399-2399 Fax: +49-30-6399-23752 E-Mail: [email protected] USA: Min Typ diameter 800 0.5 1.0 2.8 22 32 1 350 90 Max 5.0 240 0.88 2.0 0.15 Unit µm mm² nA pF A/W A/W ns MHz V V/K Pacific Silicon Sensor, Inc. 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: [email protected] ta Sheet First Sensor APD Data Sheet 00-11 TO # 500970 Part Description AD800-11 TO Order # 500970 sion 20-06-11 Version 20-06-11 Quantum efficiency (23 °C) Capacitance as fct of reverse bias (23 °C) 100 80 70 Quantum efficiency (%) 80 Capacitance (pF) 60 60 40 20 50 40 30 20 10 0 0 350 450 550 650 750 850 950 0 10 20 30 40 50 60 70 80 90 100 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias (23 °C) Dark current as fct of bias (23 °C) 1.000 1,0E-07 Dark current (A) 1,0E-08 Multiplication 100 1,0E-09 10 1,0E-10 1 1,0E-11 20 40 60 80 100 120 140 160 180 20 40 60 80 100 120 140 160 180 Reverse bias [V] Reverse bias [V] Application hints: Bias supply voltage Current limiting resistor APD min. 0,1 µF, closest to APD • Current should be limited by a protecting resistor or current limiting - IC inside the power supply • For low light level applications blocking of ambient light should be used • For high gain applications bias voltage should be temperature compensated • Please consider basic ESD protection while handling • Use low noise read-out - IC • For further questions please refer to document "Instructions for handling and processing" • Optimum gain: 50-80 Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Package dimension: Small quantities: Foam pad, boxed (12 cm x 16.5 cm) Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C. European, International Sales: First Sensor AG Peter-Behrens-Strasse 15 12459 Berlin Germany Phone: +49-30-6399-2399 Fax: +49-30-6399-23752 E-Mail: [email protected] USA: Pacific Silicon Sensor, Inc. 5700 Corsa Avenue #105 Westlake Village CA 91362 USA Phone: +1-818-706-3400 Fax: +1-818-889-7053 E-Mail: [email protected]