DMN5L06W NEW PRODUCT Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · N-Channel MOSFET SOT-323 Low On-Resistance Very Low Gate Threshold Voltage · · · · · · Min Max Low Input Capacitance A A 0.25 0.40 Fast Switching Speed D B 1.15 1.35 C 2.00 2.20 Low Input/Output Leakage B C Ultra-Small Surface Mount Package S G Lead Free By Design/RoHS Compliant (Note 2) G “Green” Device (Note 3) H K Mechanical Data · · Dim Case: SOT-323 M J D L F Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Drain D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 a 0° 8° All Dimensions in mm Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Gate Weight: 0.006 grams (approximate) Source EQUIVALENT CIRCUIT Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 50 V Drain-Gate Voltage RGS £ 1.0MW VDGR 50 V Gate-Source Voltage Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 1) Continuous ID 280 mA Drain Current (Note 1) Pulsed IDM 1.5 A Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30613 Rev. 3 - 2 1 of 4 www.diodes.com DMN5L06W ã Diodes Incorporated @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 50 ¾ ¾ V VGS = 0V, ID = 10mA IDSS ¾ ¾ 0.1 500 µA VDS = 50V, VGS = 0V IGSS ¾ ¾ ±20 nA VGS = ±20V, VDS = 0V VGS(th) 0.49 ¾ 1.2 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ 1.6 2.2 3 4 W VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA On-State Drain Current ID(ON) 0.5 1.0 ¾ A Forward Transconductance ½Yfs½ 200 ¾ ¾ mS VSD 0.5 ¾ 1.4 V Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5.0 pF OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS 1 1.2 VDS = 25V, VGS = 0V f = 1.0MHz VDS = 10V Pulsed 8V VGS = 10V 8V 6V 5V 4V 3V 10V 6V 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.5 4V 0.9 3V 0.6 0.3 TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 0.01 TA = 0° C TA = -25° C TA = -55° C 0 2 1 0 3 4 5 0.001 0.8 2.5 3 1.5 2 1 0.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 3.5 10 VDS = 10V VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT Electrical Characteristics VGS = 10V Pulsed ID = 1mA 0.7 Pulsed TA = 125° C 0.6 TA = 85° C TA = 150° C 0.5 0.4 1 0.3 TA = -55° C TA = 25° C 0.2 TA = 0° C TA = -25° C 0.1 0 -75 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature DS30613 Rev. 3 - 2 0.1 0.001 2 of 4 www.diodes.com 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 DMN5L06W VGS = 5V Pulsed TA = 25° C Pulsed 7 TA = 85° C TA = 125° C 6 TA = 150° C 5 4 1 TA = -55° C TA = 25° C TA = 0° C 3 TA = -25° C 2 ID = 280mA 1 ID = 140mA 0 0.1 0.01 0.001 1 0.1 5 0 10 15 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 1 2.5 VGS = 0V Pulsed VGS = 10V Pulsed 2.3 2.1 1.9 ID = 280mA 1.7 ID = 140mA 1.5 1.3 1.1 0.9 IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT 8 10 TA = 150° C 0.1 TA = 125° C TA = 85° C 0.01 TA = 25° C TA = -25° C 0.7 TA = -55° C 0.5 0.001 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30613 Rev. 3 - 2 3 of 4 www.diodes.com 0 1 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage DMN5L06W |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 VGS = 0V 0.01 TA = 25°C Pulsed 0.001 0.5 0 1 TA = -55° C VDS = 10V Pulsed TA = -25° C TA = 0° C 0.1 TA = 25° C TA = 85° C TA = 125° C TA = 150° C 0.01 1 0.01 0.001 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 250 Pd, POWER DISSIPATION (mW) NEW PRODUCT 1 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 11, Derating Curve - Total Ordering Information Notes: (Note 5) Device Packaging Shipping DMN5L06W-7 SOT-323 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K5L = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K5L YM Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30613 Rev. 3 - 2 4 of 4 www.diodes.com DMN5L06W