Smart Low Side Power Switch HITFET BTS 3410G Features Product Summary · Logic Level Input Drain source voltage VDS · Input Protection (ESD) On-state resistance RDS(on) 200 mW · Thermal shutdown with auto restart Nominal load current ID(Nom) 1.3 A • Green product (RoHS compliant) Clamping energy EAS 150 mJ 42 V · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â In1 Pin 2 Drain1 Pin 7and 8 Logic Channel 1 Pin 1 Source1 Drain2 Pin 5and 6 In2 Pin 4 Logic Channel 2 Pin 3 Source2 Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin Configuration (Top view) Pin Symbol Function 1 S1 Source Channel 1 2 IN1 Input Channel 1 3 S2 4 S1 1· 8 D1 Source Channel 2 IN1 2 7 D1 IN2 Input Channel 2 S2 3 6 D2 5 D2 Drain Channel 2 IN2 4 5 D2 6 D2 Drain Channel 2 7 D1 Drain Channel 1 8 D1 Drain Channel 1 HITFET Drain1 â Current Limitation In1 PG- DSO-8-25 OvervoltageProtection Pin 7, 8 Vbb Gate-Driving Unit Pin 2 M ESD Overload Protection Over- temperature Protection Short circuit Protection Pin 1 Source1 Drain2 Current Limitation In2 OvervoltageProtection Pin 5, 6 Vbb Gate-Driving Unit Pin 4 M ESD Overload Protection Over- temperature Protection Short circuit Protection Pin 3 Source2 Datasheet 2 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection 1) VDS(SC) 18 Unit V Tj = -40...150 °C IIN Continuous input current1) mA -0.2V £ VIN £ 10V no limit VIN < -0.2V or VIN > 10V | IIN | £ 2 Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation2)5) Ptot 0.8 W EAS 150 mJ VLD 50 V 2 kV °C TA = 85 °C Unclamped single pulse inductive energy1) each channel Load dump protection VLoadDump1)3) = VA + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage1) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance junction - ambient: R thJA per channel @ 6 cm 2 cooling area2) K/W one channel on 100 both channels on 160 1not subject to production test, specified by design 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5 not subject to production test, calculated by R THJA and Rds(on) Datasheet 3 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics VDS(AZ) Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 0.3 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance R DS(on) VIN = 5 V, ID = 1.4 A, Tj = 25 °C VIN = 5 V, ID = 1.4 A, Tj = 150 °C µA mW - 190 240 - 350 480 - 150 200 - 280 400 R DS(on) On-state resistance VIN = 10 V, I D = 1.4 A, T j = 25 °C VIN = 10 V, I D = 1.4 A, T j = 150 °C ID(Nom) Nominal load current per channel5) A VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C, one channel on both channels on Current limit (active if VDS>2.5 V)2) ID(lim) 1.3 1.65 - 1 1.3 - 5 7.5 10 VIN = 10 V, VDS = 12 V, t m = 200 µs 1not subject to production test, specified by design 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on cond and a short circuit occurs, these values might be exceeded for max. 50 µs. 5 not subject to production test, calculated by R THJA and Rds(on) Datasheet 4 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. ton - 45 100 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: toff - 60 100 RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: -dVDS/dt on - 0.4 1.5 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.6 1.5 150 175 - °C - 10 - K Dynamic Characteristics Turn-on time VIN to 90% ID : µs V/µs RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Tjt Thermal hysteresis2) DT jt Input current protection mode IIN(Prot) 25 50 300 Input current protection mode IIN(Prot) - 40 300 EAS 150 - - mJ VSD - 1 - V µA Tj = 150 °C Unclamped single pulse inductive energy2) each channel ID = 0.9 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 7 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Datasheet 5 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Block diagram Inductive and overvoltage output clamp Terms RL V I IN D Z D IN ID VDS Vbb HITFET S S VIN HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input VIN Source/ Ground IIN IDS Tj Datasheet 6 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G 1 Overall maximum allowable power 2 On-state resistance dissipation; P tot = f(TS) resp. P tot = f(TA) @ R thJA=80 K/W R ON = f(Tj ); ID=1.4A; V IN=10V 3 500 mW W max. RDS(on) 400 T S Ptot 2 T 350 300 typ. A 1.5 250 200 1 150 100 0.5 50 0 -50 -25 0 25 50 75 100 °C Tj 0 -50 150 -25 0 25 50 75 100 125 °C Tj 3 On-state resistance 4 Typ. input threshold voltage R ON = f(T j); ID= 1.4A; V IN=5V VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V 500 2 max. mW V 400 1.6 VGS(th) RDS(on) 175 typ. 350 300 1.4 1.2 250 1 200 0.8 150 0.6 100 0.4 50 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj Datasheet -25 0 25 50 75 100 °C 150 Tj 7 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G 5 Typ. transfer characteristics 6 Typ. short circuit current I D=f(V IN); VDS=12V; T Jstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN 10 8 A A 8 7 ID(lim) ID 6 5 6 Vin=10V 5 4 5V 4 3 3 2 2 1 0 0 1 1 2 3 4 5 6 7 8 V 0 -50 10 -25 0 25 50 75 100 125 °C VIN 7 Typ. output characteristics 8 Typ. off-state drain current I D=f(V DS); T Jstart=25°C Parameter: V IN IDSS = f(T j) 10 Vin=10V A 175 Tj 11 µA 7V max. 9 8 6V 8 5V 6 IDSS ID 7 4V 7 6 5 5 4 4 3 3 3V 2 2 1 0 0 1 1 2 3 4 V 0 -50 6 VDS Datasheet typ. -25 0 25 50 75 100 125 °C 175 Tj 8 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink ZthJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T ; one channel on 10 2 12 K/W A -40°C 25°C ZthJA ID(lim) 10 1 8 85°C 10 0 6 150°C 4 10 -1 2 0 0 0.5 1 1.5 2 2.5 3 ms D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 10 -2 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 4 s 10 4 tP t 11 Determination of ID(lim) 12 Typ. transient thermal impedance ID(lim) = f(t); t m = 200µs ZthJA=f(tp) @ 6 cm2 cooling area Parameter: TJstart Parameter: D=tp/T ; both channels on 10 3 12 K/W A -40°C ZthJA ID(lim) 10 2 8 25°C 10 1 85°C 6 10 0 4 150°C 10 -1 2 0 0 0.1 0.2 0.3 0.4 ms 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 0.55 s 10 4 tP t Datasheet D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 9 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Package Outlines 1 Package Outlines 0.1 2) 0.41+0.1 -0.06 0.2 8 5 1 4 5 -0.2 1) M 0.19 +0.06 4 -0.2 C B 8 MAX. 1.27 1.75 MAX. 0.175 ±0.07 (1.45) 0.35 x 45˚ 1) 0.64 ±0.25 6 ±0.2 A B 8x 0.2 M C 8x A Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max. in dambar area GPS01181 Figure 1 PG-DSO8-25 (Plastic Green Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet 10 Dimensions in mm Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Revision History 2 Revision History Version Rev. 1.3 Date Changes 2007-11-06 updated package drawing of green package Rev. 1.2 2007-06-18 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green package naming Green explanation added Rev. 1.1 2004-03-05 released production version Datasheet 11 Rev. 1.3, 2007-11-06 Edition 2007-11-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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