Fairchild FCA16N60 600v n-channel mosfet Datasheet

SuperFET
FCA16N60
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
• Typ. Rds(on)=0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
D
G
G DS
TO-3P
FCA Series
S
Absolute Maximum Ratings
Symbol
Parameter
FCA16N60
Unit
600
V
16
10.1
A
A
48
A
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
16
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(TC = 25°C)
- Derate above 25°C
± 30
V
450
mJ
4.5
V/ns
167
1.33
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCA16N60
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.75
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
41.7
°C/W
©2006 Fairchild Semiconductor Corporation
FCA16N60 REV. A1
1
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FCA16N60 600V N-Channel MOSFET
September 2006
TM
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCA16N60
FCA16N60
TO-3P
-
-
30
FCA16N60
FCA16N60_F109
TO-3PN
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250μA, TJ = 150°C
--
650
--
V
ID = 250μA, Referenced to 25°C
--
0.6
--
V/°C
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 16A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.22
0.26
Ω
--
11.5
--
S
--
1730
2250
pF
--
960
1150
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 8A
gFS
Forward Transconductance
VDS = 40V, ID = 8A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Crss
Reverse Transfer Capacitance
--
85
--
pF
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
45
60
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
110
--
pF
VDD = 300V, ID = 16A
RG = 25Ω
--
42
85
ns
--
130
270
ns
--
165
340
ns
--
90
190
ns
--
55
70
nC
--
10.5
13
nC
--
28
--
nC
16
A
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 16A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 16A
--
--
1.4
V
trr
Reverse Recovery Time
435
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 16A
dIF/dt =100A/μs
--
Qrr
--
7.0
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCA16N60 REV. A1
2
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FCA16N60 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2
2
10
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
0
10
* Notes :
1. 250μs Pulse Test
1
10
150° )C
25° )C
-55° )C
0
10
* Note:
1. VDS = 40V
o
2. TC = 25 C
-1
0
10
2. 250μs Pulse Test
1
10
10
2
4
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2
0.5
VGS = 10V
0.4
0.3
VGS = 20V
0.2
0.1
1
10
150° )C
0
10
25° )C
∗ Notes :
1. VGS = 0V
2. 250 μs Pulse Test
o
* Note : ΤJ = 25 C
0.0
0
5
10
15
20
25
30
35
40
45
50
0.2
0.4
Figure 5. Capacitance Characteristics
Coss = Cds + Cgd
6000
VGS, Gate-Source Voltage [V]
Crss = Cgd
5000
Coss
4000
∗ Notes :
1. VGS = 0 V
Ciss
2. f = 1 MHz
2000
0
-1
10
Crss
0
10
1.2
1.4
1.6
1
10
VDS = 100V
10
VDS = 250V
VDS = 480V
8
6
4
2
∗ Note : ID = 16A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FCA16N60 REV. A1
1.0
12
Ciss = Cgs + Cgd (Cds = shorted)
1000
0.8
Figure 6. Gate Charge Characteristics
7000
3000
0.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
10
10
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.6
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
3
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FCA16N60 600V N-Channel MOSFET
Typical Performance Characteristics
FCA16N60 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
∗ Notes :
1. VGS = 10 V
0.5
2. ID = 8 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
50
100
150
200
o
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
Operation in This Area
is Limited by R DS(on)
2
10
15
ID, Drain Current [A]
ID, Drain Current [A]
10 us
100 us
1 ms
1
10
DC
0
10
∗ Notes :
o
1. TC = 25 C
-1
10
10
5
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
75
VDS, Drain-Source Voltage [V]
100
125
150
TC, Case Temperature [°C]
Figure 11. Transient Thermal Response Curve
ZθJC(t), Thermal Response
10
0
D = 0 .5
∗ N o te s :
0 .2
10
-1
o
1 . Z θ JC (t) = 0 .7 5 C /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
0 .1
3 . T J M - T C = P D M * Z θ JC (t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
10
10
t2
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FCA16N60 REV. A1
4
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FCA16N60 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA16N60 REV. A1
5
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FCA16N60 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FCA16N60 REV. A1
6
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FCA16N60 600V N-Channel MOSFET
Mechanical Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
FCA16N60 REV. A1
7
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FCA16N60 600V N-Channel MOSFET
Mechanical Dimensions (continued)
TO-3PN
Dimensions in Millimeters
FCA16N60 REV. A1
8
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FCA16N60 600V N-Channel MOSFET
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
9
FCA16N60 REV. A1
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