ADPOW APTM100AM90F Phase leg mosfet power module Datasheet

APTM100AM90F
VDSS = 1000V
RDSon = 90mΩ typ @ Tj = 25°C
ID = 78A @ Tc = 25°C
Phase leg
MOSFET Power Module
Application
VBUS
Q1
G1
OUT
S1
•
•
•
•
Features
Q2
•
G2
S2
0/VBUS
•
•
•
VBUS
0/VBUS
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
OUT
S1
Benefits
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
78
59
312
±30
105
1250
25
50
3000
Unit
V
A
V
mΩ
W
A
May, 2005
•
•
•
•
S2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM100AM90F– Rev 1
G1
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
APTM100AM90F
All ratings @ Tj = 25°C unless otherwise specified
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Min
VGS = 0V,VDS = 1000V
T j = 25°C
VGS = 0V,VDS = 800V
T j = 125°C
VGS = 10V, ID = 39A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Min
VGS = 10V
VBus = 500V
ID = 78A
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery Z
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
20.7
3.5
0.64
744
Unit
Max
Unit
mA
mΩ
V
nA
nF
nC
488
18
12
40
3.6
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 78A, R G = 1.2Ω
5.7
Test Conditions
ns
155
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 78A, R G = 1.2Ω
mJ
2.5
mJ
3.1
Min
Typ
Tj = 25°C
Max
78
59
1.3
18
320
Tj = 125°C
650
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 78A
IS = - 78A
VR = 500V
diS/dt = 400A/µs
IS = - 78A
VR = 500V
diS/dt = 400A/µs
Max
1
3
105
5
±250
96
Source - Drain diode ratings and characteristics
Symbol
IS
90
3
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 78A
R G =1.2Ω
Rise Time
Typ
Tj = 25°C
14.4
Tj = 125°C
38.9
Unit
A
V
V/ns
ns
µC
May, 2005
IDSS
Characteristic
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 78A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2–6
APTM100AM90F– Rev 1
Electrical Characteristics
Symbol
APTM100AM90F
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Torque
Mounting torque
2500
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.1
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM100AM90F– Rev 1
May, 2005
Package outline
APTM100AM90F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
240
320
7V
160
6.5V
120
6V
80
5.5V
40
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
ID, Drain Current (A)
240
200
160
120
TJ =25°C
80
40
5V
0
0
5
10
15
20
25
TJ =125°C
30
0
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
9
80
Normalized to
VGS =10V @ 39A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.9
0.8
70
60
50
40
30
20
10
0
0
40
80
120
160
ID, Drain Current (A)
200
240
25
50
75
100
125
150
TC, Case Temperature (°C)
May, 2005
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1.4
TJ =-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM100AM90F– Rev 1
I D, Drain Current (A)
V GS=15, 10&8V
200
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=39A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by R DSon
100
1ms
10
10ms
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=78A
TJ=25°C
12
10
VDS=200V
V DS =500V
V DS=800V
8
6
4
2
0
0
200
400
600
800
1000
Gate Charge (nC)
May, 2005
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM100AM90F– Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100AM90F
APTM100AM90F
Delay Times vs Current
Rise and Fall times vs Current
80
t d(off)
160
V DS=670V
RG =1.2Ω
T J=125°C
L=100µH
120
80
0
40
tr
0
20
40
60
80
100 120 140 160
20
40
60
80 100 120 140 160
I D, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
14
Eon
VDS=670V
RG=1.2Ω
TJ=125°C
L=100µH
8
6
Switching Energy (mJ)
Switching Energy (mJ)
10
Eoff
4
2
0
V DS=670V
ID=78A
T J=125°C
L=100µH
12
10
Eoff
8
Eon
6
4
2
0
20
40
60
80
100 120 140 160
0
2
I D, Drain Current (A)
4
6
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
I DR, Reverse Drain Current (A)
250
ZVS
200
Frequency (kHz)
tf
20
td(on)
40
VDS=670V
RG=1.2Ω
TJ=125°C
L=100µH
60
tr and tf (ns)
td(on) and td(off) (ns)
200
ZCS
150
VDS=670V
D=50%
RG=1.2Ω
T J=125°C
T C=75°C
100
50
Hard
switching
0
10
20 30 40 50
ID, Drain Current (A)
60
70
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM100AM90F– Rev 1
May, 2005
0
100
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