AO4443 40V P-Channel MOSFET General Description Product Summary The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=-10V) -40V -6A RDS(ON) (at VGS=-10V) < 42mΩ RDS(ON) (at VGS =-4.5V) < 63mΩ VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D Bottom View G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Units V ±20 V -6 ID TA=70°C Maximum -40 -5 A IDM -40 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 20 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: August 2011 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL www.aosmd.com -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4443 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 VGS=-10V, ID=-6A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-5A gFS Forward Transconductance VDS=-5V, ID=-6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max ±100 nA -2.6 V 35 42 53 65 46.5 63 A -0.76 750 940 14 V -3.5 A 1175 pF 21 Ω nC 17.3 22 Qg(4.5V) 8.4 11 Gate Source Charge Qgd Gate Drain Charge VGS=-10V, VDS=-20V, ID=-6A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs VGS=-10V, VDS=-20V, RL=3.35Ω, RGEN=3Ω 3.2 nC 4.3 nC 10.3 ns 4.3 ns 39 ns 46.5 IF=-6A, dI/dt=100A/µs pF pF SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs mΩ S 97 7 mΩ -1 72 VGS=0V, VDS=0V, f=1MHz µA -2 17 VGS=0V, VDS=-20V, f=1MHz Units V VDS=-40V, VGS=0V IGSS RDS(ON) Typ 17 ns 24 11.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: August 2011 www.aosmd.com Page 2 of 5 AO4443 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 -10V -7V -4.5V 30 -ID(A) 30 -ID (A) VDS=-5V -5V 20 -4V 20 125°C 25°C 10 10 VGS=-3.5V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 2 65 Normalized On-Resistance 60 55 RDS(ON) (mΩ Ω) 1 VGS=-4.5V 50 45 40 VGS=-10V 35 30 1.8 VGS=-10V ID=-6A 1.6 17 5 2 VGS=-4.5V 10 1.4 1.2 ID=-5A 1 0.8 0 3 6 9 12 15 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 100 1.0E+02 ID=-6A 1.0E+01 40 1.0E+00 125°C -IS (A) RDS(ON) (mΩ Ω) 80 60 1.0E-02 125°C 1.0E-03 25°C 40 1.0E-01 25°C 1.0E-04 1.0E-05 20 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: August 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4443 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=-20V ID=-6A 1200 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 1000 800 600 400 Coss 2 200 0 Crss 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 18 0 100.0 5 10 15 20 25 30 35 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 TA=25°C 10µs 1000 100µs RDS(ON) limited Power (W) 10.0 -ID (Amps) 40 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 1 0.0 0.01 0.1 1 -VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: August 2011 www.aosmd.com Page 4 of 5 AO4443 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: August 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5