\Pioaueti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
COMPLEMENTARY SILICON PLASTIC
POWER TRANSISTORS
... designed for use in general purpose power amplifier and switching
applications.
NPN
BD241
BD241A
BD241B
BD241C
FEATURES:
* Collector-Emitter Sustaining Voltage Vci««ia 45V(Mln)- BD241 ,BD242
60V(Min)- BD241A.BD242A
80V(Mln)- BD241B.BD242B
100V(Min)- BD241C.BD242C
• DC Current Gain hFE= 25(Mn)eic- 1 ,OA
* Current Gain-Bandwidth Product fT=3.0 MHz (Min)Q lc=500mA
3 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
45-100 VOLTS
40 WATTS
MAXIMUM RATINGS
Characteristic
PNP
BD242
BD242A
BD242B
BD242C
Symbol BD241 BD241A BD241B BD241C Unit
BD242 BD242A BD242B B0242C
Collector-Emitter Voltage
VCEO
45
SO
80
100
V
Collector-Base Voltage
VCBO
55
70
90
115
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current - Continuous
-Peak
'c
3.0
5.0
A
Base Current
'a
1.0
A
Total Power Di$sipattonGTc= 25°C
Derate above 25°C
PD
40
0.32
Operating and Storage Junction
Temperature Range
W
W/°C
TO-220
i-
r
1 2 3
—O
°C
L.TSTO
r
L.
-65 to +150
THERMAL CHARACTERISTICS
Ch araoteristic
Thermal Resistance Junction to Case
Symbol
Max
Unit
Rejc
3.125
°C/W
PIN 1 BASE
2.COOECTOR
3.EMITTER
4.COLLECTOR(CASE)
DIM
FIGURE-1 POWER DERATING
40
35
A
B
C
30
D
25
E
F
G
H
I
J
K
20
15
10
L
25
50
75
100
125
150
M
O
MILLIMETERS
MIN
MAX
14.38
9.78
5.01
13.06
3.S7
2.42
1.12
0.72
422
1.14
2.20
0.33
2.48
3.70
15.31
10.42
652
14.62
4.07
3.66
1.36
0.96
4.96
1.33
2.97
0.66
2.96
3.90
Tc , TEMPERATUREfC)
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ramished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T. = 25*C unless otherwise noted)
IsnWaCTenSUC
Symbol
Mln
w
vCEO(n»)
45
60
80
100
Max
Unit.
OFF CHARACTERISTICS
Collector-Emitter Sustaining Vottage(1)
( lc= 30mA,lB= 0 )
Collector Cutoff Current
(VCE=30V,IB»0)
(V^ 60V, IB= 0 )
Collector Cutoff Currant
(VM= 45V, Vm= 0 )
(Vc,= 60V,V_= 0 )
(V..- 80V, V.," 0 )
(VCI= 100V.V,.= 0 )
BD241 .BD242
BD241A.BD242A
BD241B.BD242B
BD241C.BD242C
BD241M2/41A/42A
BD241 B/42B/41 C/42C
BD241/42
BD241A/42A
BD241 B/42B
BD241C/42C
Emitter Cutoff Current
(VEB-SV.IC-O)
V
mA
'ceo
0.3
0.3
mA
'CES
0.2
0.2
0.2
0.2
mA
'no
1.0
ON CHARACTERISTICS (1)
DC Current Gain
(Vcj-4.OV.lc-1.OA)
(VC, = 4.0V. IC»3.0A)
Collector-Emitter Saturation Voltage
(lc = 3.0A.IB=600mA)
Base-Emitter On Voltage
(IC-3.0A.VC1=4.0V)
hFE
25
10
V
Vc«,
1.2
V
V«-
1.8
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Prodct (2)
{le«600 mA, VcflO V, t* 1 MHz)
IT
Small-Signal Current Gain
(lc-500mA,Vcg=10V,f=1 KHz)
hfe
(1) Pulse Test Pulse width - 300 M» , Duty Cycle ^ 2.0%
(2)fT
MHz
3.0
20