BC857F Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847F Ordering Information Type NO. Marking BC857F UA Package Code SOT-23F : hFE rank Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC KST-2093-000 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 PIN Connections 1. Base 2. Emitter 3. Collector 1 BC857F (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -45 V Emitter-Base voltage VEBO -5 V Collector current IC -100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Collector-Emitter breakdown voltage BVCEO IC=-2mA, IB=0 Base -Emitter turn on voltage VBE(ON) Base -Emitter saturation voltage Collector-Emitter saturation voltage - - V VCE=-5V, IC=-2mA - - -700 mV VBE(sat) IC=-100mA, IB=-5mA - -900 - mV VCE(sat) IC=-100mA, IB=-5mA - - -650 mV - - -15 nA 110 - 800 - VCB=-5V, IC=-10mA - 150 - MHz Cob VCB=-10V, IE=0, f=1MHz - - 4.5 pF NF VCE=-5V, IC=-200µA, f=1KHz,Rg=2KΩ - - 10 dB ICBO VCB=-35V, IE= 0 DC current gain hFE* VCE=-5V, IC=-2mA Collector output capacitance Noise Figure Unit -45 Collector cut-off current Transition frequency Min. Typ. Max. fT * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2093-000 2 BC857F Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 3 IC-VCE Fig. 2 IC-VBE Fig. 4 hFE-IC Fig. 5 VCE(sat)-IC KST-2093-000 3