Rohm DTA124TH Digital transistors (built in resistor) Datasheet

DTA124TH / DTA124TE / DTA124TUA /
DTA124TKA / DTA124TSA
Transistors
Digital transistors (built in resistor)
DTA124TH / DTA124TE / DT124TUA /
DTA124TKA / DTA124TSA
!External dimensions (Units : mm)
DTA124TH
1.6
0to0.1
0.7
0.12
1.0
(2)
(3)
1.6
(1)
0.5 0.5
0.27
0.85
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3H
0.2
1.6
(2)
(3)
1.0
(1)
0.50.5
DTA124TE
0.2
Addreviated symbol : 95
0.3
!Features
1) Built-in circuit enables the configuration of an
inverter circuit without connecting external input
resistors.
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making device design easy.
0.8
0.7
0to0.1
!Equivalent circuit
0.55
0.15
1.6
0.1Min.
ROHM : EMT3
Addreviated symbol : 95
2.0
1.3
0.3
(3)
(2)
All terminals have same dimensions
E
0.65 0.65
(1)
R1
0.9
DTA124TUA
B
0.7
C
(1) Emitter
(2) Base
(3) Collector
1.25
B : Base
C : Collector
E : Emitter
0.1to0.4
ROHM : UMT3
EIAJ : SC-70
0to0.1
0.15
0.2
2.1
(1) Emitter
(2) Base
(3) Collector
Addreviated symbol : 95
(2)
(3)
0.4
All terminals have same dimensions
0.95 0.95
1.9
2.9
(1)
DTA124TKA
1.6
1.1
(1) Emitter
(2) Base
(3) Collector
0to0.1
ROHM : SMT3
EIAJ : SC-59
0.8
0.15
2.8
0.3to0.6
Addreviated symbol : 95
DTA124TSA
2
(15Min.)
3Min.
3
4
0.45
2.5
5
ROHM : SPT
EIAJ : SC-72
(1) (2) (3)
0.5 0.45
(1) Emitter
(2) Collector
(3) Base
DTA124TH / DTA124TE / DTA124TUA /
DTA124TKA / DTA124TSA
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Limits(DTA124T )
Symbol
H
E
UA
Unit
KA
SA
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55~+150
˚C
150
200
300
mW
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−50
-
-
V
IC=−50µA
Collector-emitter breakdown voltage
BVCEO
−50
-
-
V
IC=−1mA
Emitter-base breakdown voltage
BVEBO
−5
-
-
V
IE=−50µA
ICBO
-
-
−0.5
µA
VCB=−50V
VEB=−4V
Collector cutoff current
Conditions
IEBO
-
-
−0.5
µA
VCE(sat)
-
-
−0.3
V
IC/IB=−5mA/−0.5mA
DC current transfer ratio
hFE
100
250
600
-
VCE=−5V, IC=−1mA
Input resistance
R1
15.4
22
28.6
kΩ
-
Transition frequency
fT
-
250
-
MHz
VCE=−10V, IE=5mA, f=100MHz ∗
Emitter cutoff current
Collector-emitter saturation voltage
∗ Transition frequency of the device
!Packaging specifications
Part No.
Package
EMT3H
EMT3
UMT3
SMT3
SPT
Package type
Taping
Taping
Taping
Taping
Taping
Code
T2L
TL
T106
T146
TP
Basic ordering
unit (pieces)
8000
3000
3000
3000
5000
-
-
-
-
-
-
-
-
-
DTA124TH
DTA124TE
-
DTA124TUA
-
-
DTA124TKA
-
-
-
DTA124TSA
-
-
-
-
1k
VCE=−5V
DC CURRENT GAIN : hFE
500
200
100
50
Ta=100˚C
25˚C
−40˚C
20
10
5
2
1
-100µ -200µ -500µ -1m -2m
-5m -10m -20m
-50m -100m
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
!Electrical characteristic curves
-1
IC/IB=10
-500m
-200m
-100m
-50m
-20m
-10m
Ta=100˚C
25˚C
−40˚C
-5m
-2m
-1m
-10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
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