BT151-1000RT 12 A thyristor high blocking voltage high operating temperature Rev. 01 — 6 August 2007 Product data sheet 1. Product profile 1.1 General description Passivated thyristor in a SOT78 plastic package. 1.2 Features n High thermal cycling performance n Tj is 150 °C capable n VDRM, VRRM is 1000 V capable 1.3 Applications n Motor control n Ignition circuits n Static switching n Protection circuits 1.4 Quick reference data n VDRM ≤ 1000 V n VRRM ≤ 1000 V n ITSM ≤ 120 A (t = 10 ms) n IT(RMS) ≤ 12 A n IGT ≤ 15 mA n Tj ≤ 150 °C 2. Pinning information Table 1. Pinning Pin Description 1 cathode (K) 2 anode (A) 3 gate (G) mb mounting base; connected to anode Simplified outline Symbol mb A K G sym037 1 2 3 SOT78 (3-lead TO-220AB) BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 3. Ordering information Table 2. Ordering information Type number Package BT151-1000RT Name Description Version SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 1000 V VRRM repetitive peak reverse voltage - 1000 V IT(AV) average on-state current half sine wave; Tmb ≤ 134 °C; see Figure 1 - 7.5 A IT(RMS) RMS on-state current all conduction angles; see Figure 4 and 5 - 12 A ITSM non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 10 ms - 120 A t = 8.3 ms - 131 A t = 10 ms - 72 A2s ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs - 50 A/µs - 2 A - 5 W - 0.5 W I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current PGM peak gate power PG(AV) average gate power Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C for fusing over any 20 ms period BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 2 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 003aab830 15 Ptot (W) a = 1.57 1.9 2.2 10 2.8 4 5 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α 0 0 2 4 6 8 IT(AV) (A) Form factor a = IT(RMS) / IT(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values 003aab829 160 ITSM (A) 120 80 IT ITSM 40 t tp Tj initial = 25 °C max 0 1 102 10 n (number of cycles) 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 3 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 001aaa956 103 ITSM (A) dlT/dt limit 102 IT ITSM t tp Tj initial = 25 °C max 10 10−5 10−4 10−3 10−2 tp (s) tp ≤ 10 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 001aaa954 25 IT(RMS) (A) 20 003aab828 16 IT(RMS) (A) 12 15 8 10 4 5 0 10−2 10−1 1 10 surge duration (s) 0 −50 0 50 100 150 Tmb (°C) f = 50 Hz; Tmb ≤ 134 °C Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 4 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 6 - - 1.3 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W 001aaa962 10 Zth(j-mb) (K/W) 1 10−1 δ= P tp T 10−2 t tp T 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 5 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise stated. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 100 mA; see Figure 8 2 - 15 mA IL latching current VD = 12 V; IGT = 100 mA; see Figure 10 - - 40 mA IH holding current VD = 12 V; IGT = 100 mA; see Figure 11 - - 20 mA VT on-state voltage IT = 23 A - 1.4 1.75 V VGT gate trigger voltage IT = 100 mA; see Figure 7 VD = 12 V - 0.6 1.5 V VD = VDRM(max); Tj = 150 °C 0.25 0.4 - V ID off-state current VR = VDRM(max); Tj = 150 °C - 0.5 2.5 mA IR reverse current VR = VRRM(max); Tj = 150 °C - 0.5 2.5 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 150 °C; exponential waveform; gate open circuit; see Figure 12 - 300 - V/µs tgt gate-controlled turn-on time ITM = 40 A; VD = VDRM(max); IG = 100 mA; dIG/dt = 5 A/µs - 2 - µs tq commutated turn-off time VDM = 0.67 × VDRM(max); Tj = 150 °C; ITM = 20 A; VR = 25 V; (dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs; RGK = 100 Ω - 70 - µs BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 6 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 003aab823 1.6 VGT VGT(25°C) IGT IGT(25°C) 1.2 2 0.8 1 0.4 −50 0 50 100 150 003aab824 3 0 −50 0 50 100 Tj (°C) Fig 7. Normalized gate trigger voltage as a function of junction temperature 001aaa959 30 150 Tj (°C) Fig 8. Normalized gate trigger current as a function of junction temperature 003aab825 3 IL IL(25°C) IT (A) 2 20 (1) (2) (3) 1 10 0 0 0.5 1 1.5 2 0 −50 0 50 100 150 Tj (°C) VT (V) Vo = 1.06 V Rs = 0.0304 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 7 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 003aab826 3 IH IH(25°C) dVD/dt (V/µs) 2 103 1 102 0 −50 003aab827 104 10 0 50 100 150 0 50 100 150 Tj (°C) Tj (°C) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 8 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1 Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1 L2 max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.45 1.00 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 05-03-22 05-10-25 Fig 13. Package outline SOT78 (3-lead TO-220AB) BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 9 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BT151-1000RT_1 20070806 Product data sheet - - BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 10 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BT151-1000RT_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 6 August 2007 11 of 12 BT151-1000RT NXP Semiconductors 12 A thyristor high blocking voltage high operating temperature 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 August 2007 Document identifier: BT151-1000RT_1