NXP BT151-1000RT 12 a thyristor high blocking voltage high operating temperature Datasheet

BT151-1000RT
12 A thyristor high blocking voltage high operating
temperature
Rev. 01 — 6 August 2007
Product data sheet
1. Product profile
1.1 General description
Passivated thyristor in a SOT78 plastic package.
1.2 Features
n High thermal cycling performance
n Tj is 150 °C capable
n VDRM, VRRM is 1000 V capable
1.3 Applications
n Motor control
n Ignition circuits
n Static switching
n Protection circuits
1.4 Quick reference data
n VDRM ≤ 1000 V
n VRRM ≤ 1000 V
n ITSM ≤ 120 A (t = 10 ms)
n IT(RMS) ≤ 12 A
n IGT ≤ 15 mA
n Tj ≤ 150 °C
2. Pinning information
Table 1.
Pinning
Pin
Description
1
cathode (K)
2
anode (A)
3
gate (G)
mb
mounting base; connected to anode
Simplified outline
Symbol
mb
A
K
G
sym037
1 2 3
SOT78 (3-lead TO-220AB)
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
3. Ordering information
Table 2.
Ordering information
Type number
Package
BT151-1000RT
Name
Description
Version
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDRM
Conditions
Min
Max
Unit
repetitive peak off-state voltage
-
1000
V
VRRM
repetitive peak reverse voltage
-
1000
V
IT(AV)
average on-state current
half sine wave; Tmb ≤ 134 °C;
see Figure 1
-
7.5
A
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4
and 5
-
12
A
ITSM
non-repetitive peak on-state
current
half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
-
120
A
t = 8.3 ms
-
131
A
t = 10 ms
-
72
A2s
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/µs
-
50
A/µs
-
2
A
-
5
W
-
0.5
W
I2t
I2t
dIT/dt
rate of rise of on-state current
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
150
°C
for fusing
over any 20 ms period
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
2 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab830
15
Ptot
(W)
a = 1.57
1.9
2.2
10
2.8
4
5
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
0
0
2
4
6
8
IT(AV) (A)
Form factor a = IT(RMS) / IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
003aab829
160
ITSM
(A)
120
80
IT
ITSM
40
t
tp
Tj initial = 25 °C max
0
1
102
10
n (number of cycles)
103
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
3 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
001aaa956
103
ITSM
(A)
dlT/dt limit
102
IT
ITSM
t
tp
Tj initial = 25 °C max
10
10−5
10−4
10−3
10−2
tp (s)
tp ≤ 10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa954
25
IT(RMS)
(A)
20
003aab828
16
IT(RMS)
(A)
12
15
8
10
4
5
0
10−2
10−1
1
10
surge duration (s)
0
−50
0
50
100
150
Tmb (°C)
f = 50 Hz; Tmb ≤ 134 °C
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
4 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
see Figure 6
-
-
1.3
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air
-
60
-
K/W
001aaa962
10
Zth(j-mb)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
T
10−3
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
5 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 100 mA; see Figure 8
2
-
15
mA
IL
latching current
VD = 12 V; IGT = 100 mA; see
Figure 10
-
-
40
mA
IH
holding current
VD = 12 V; IGT = 100 mA; see
Figure 11
-
-
20
mA
VT
on-state voltage
IT = 23 A
-
1.4
1.75
V
VGT
gate trigger voltage
IT = 100 mA; see Figure 7
VD = 12 V
-
0.6
1.5
V
VD = VDRM(max); Tj = 150 °C
0.25
0.4
-
V
ID
off-state current
VR = VDRM(max); Tj = 150 °C
-
0.5
2.5
mA
IR
reverse current
VR = VRRM(max); Tj = 150 °C
-
0.5
2.5
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 150 °C;
exponential waveform; gate open
circuit; see Figure 12
-
300
-
V/µs
tgt
gate-controlled turn-on
time
ITM = 40 A; VD = VDRM(max);
IG = 100 mA; dIG/dt = 5 A/µs
-
2
-
µs
tq
commutated turn-off
time
VDM = 0.67 × VDRM(max); Tj = 150 °C;
ITM = 20 A; VR = 25 V;
(dIT/dt)M = 30 A/µs; dVD/dt = 50 V/µs;
RGK = 100 Ω
-
70
-
µs
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
6 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab823
1.6
VGT
VGT(25°C)
IGT
IGT(25°C)
1.2
2
0.8
1
0.4
−50
0
50
100
150
003aab824
3
0
−50
0
50
100
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
001aaa959
30
150
Tj (°C)
Fig 8. Normalized gate trigger current as a function of
junction temperature
003aab825
3
IL
IL(25°C)
IT
(A)
2
20
(1)
(2)
(3)
1
10
0
0
0.5
1
1.5
2
0
−50
0
50
100
150
Tj (°C)
VT (V)
Vo = 1.06 V
Rs = 0.0304 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
Fig 10. Normalized latching current as a function of
junction temperature
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
7 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
003aab826
3
IH
IH(25°C)
dVD/dt
(V/µs)
2
103
1
102
0
−50
003aab827
104
10
0
50
100
150
0
50
100
150
Tj (°C)
Tj (°C)
Gate open circuit
Fig 11. Normalized holding current as a function of
junction temperature
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical values
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
8 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
L2
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
05-03-22
05-10-25
Fig 13. Package outline SOT78 (3-lead TO-220AB)
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
9 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT151-1000RT_1
20070806
Product data sheet
-
-
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
10 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BT151-1000RT_1
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 01 — 6 August 2007
11 of 12
BT151-1000RT
NXP Semiconductors
12 A thyristor high blocking voltage high operating temperature
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 6 August 2007
Document identifier: BT151-1000RT_1
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