BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) ICP *Collector Current (Pulse) 5 A 15 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage Test Condition IC = 100mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 ICES Collector Cut-off Current VCE = 1500V, VBE = 0 Min. 700 Typ. Max. Units V 1 mA 10 mA 5 V IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 5V, IC = 4.5A VCE(sat) * Collector-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1 V VBE(sat) * Base-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1.5 V 2.25 * Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 BU508AF Typical Characteristics 10000 100 VBE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 0.01 0.1 1 IC = 2 IB 1000 100 10 0.1 10 1 IC[A], COLLECTOR CURRENT 10 100 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Voltage 10000 1000 f = 1MHz Cob [pF], CAPACITANCE VCE(sat)[mV], SATURATION VOLTAGE IC = 2 IB 1000 100 10 0.1 100 10 1 10 100 1 10 IC[A], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 100 10 PC [W], POWER DISSIPATIOAN IC[A], COLLECTOR CURRENT 70 IC Max. (Pulsed) 1m s IC Max. (Continuous) DC 1 0.1 60 50 40 30 20 10 0 0.01 1 10 100 1000 0 25 50 75 100 125 150 175 200 o VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, December 2002 BU508AF Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1