Anachip ASS355BF Smd switching diode Datasheet

ASS355
SMD Switching Diode
Features
General Description
IO = 100mA
VR = 80V
0603(1608)
0.071(1.80)
0.063(1.60)
- Designed for mounting on small surface.
0.039(1.00)
0.031(0.80)
- High speed switching.
- High mounting capability, strong surge withstand,
0.033(0.85)
0.028(0.70)
high reliability.
0.010(0.25)Typ.
- Extremely thin package.
- Lead-free device
0.012(0.30)Typ.
0.014(0.35)Typ.
Dimensions in inches and (millimeter)
1005(2512)
P+
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Mechanical Data
0.035(0.90)
0.027(0.70)
- Case : 0603(1608) 1005(2512) standard package,
0.014(0.35)Typ.
molded plastic.
0.12(0.30)Typ.
- Terminals : Gold plated, solderable per
MIL-STD-750, method 2026.
0.014(0.35)Typ.
- Polarity : Indicated by cathode band.
Dimensions in inches and (millimeter)
- Mounting position : Any.
- Weight : BD:0.003gram (approximately)
BF:0.006gram (approximately)
Ordering information
A
Feature
SS : Small Singal
XX
355
PN
XX
Package type
BD-0603
BF-1005
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 0.0 Oct 29, 2003
1/3
ASS355
SMD Switching Diode
Maximum Rating (at TA=25ºC unless otherwise noted)
Symbol
Parameter
VRRM
Conditions
Min
Typ
Max
Unit
Repetitive peak reverse voltage
-
-
90
V
VR
Reverse voltage
-
-
80
V
IO
Average forward current
-
-
100
mA
-
1000
-
-
1000
-
-
-
150
300
mW
-
-
225
mA
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
0603
IFSM
Forward current,
surge peak
PD
Power Dissipation
IFRM
Repetitive peak forward current
TSTG
Storage temperature
-40
-
+125
ºC
Tj
Junction temperature
-40
-
+125
ºC
1005
0603
1005
mA
Electrical Characteristics (at TA=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forward voltage
IF=100mADC
-
-
1.0
V
IR
Reverse current
VR=80V
-
-
0.1
µA
CT
Capacitance between
terminals
F=1MHz, and 0.5 VDC reverse
voltage
-
3
-
pF
Trr
Reverse recovery time
VR=6V, IF=10mA, RL=50ohms
-
4
-
nS
Anachip Corp.
www.anachip.com.tw
Rev. 0.0 Oct 29, 2003
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ASS355
SMD Switching Diode
Rating And Characteristic Curves
Fig. 1 - Forward characteristics
Fig. 2 - Reverse characteristics
1000
10u
125 oC
1u
Reverse current (A)
Forward current (mA)
100
10
125 o
C
75 o
C
25 oC
-25 o
C
1
0.1
75oC
100n
10n
25oC
1n
-25oC
0.01
0.1n
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
10
20
30
40
50
60
70
80
90 100
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Fig. 4 - Current derating curve
f=1MHz
Ta=25oC
Mounting on glass epoxy PCBs
Average forward current (%)
Capacitance between terminals:(pF)
5.0
4.0
3.0
2.0
1.0
0
100
80
60
40
20
0
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
Ambient temperature (oC)
Reverse voltage (V)
Marking Information
ASS355
S4
Anachip Corp.
www.anachip.com.tw
Rev. 0.0 Oct 29, 2003
3/3
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