Anpec APM2007 N-channel enhancement mode mosfet Datasheet

APM2007
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
20V/30A , RDS(ON)=6mΩ(typ.) @ VGS=10V
RDS(ON)=8mΩ(typ.) @ VGS=4.5V
RDS(ON)=16mΩ(typ.) @ VGS=2.5V
•
Super High Dense Cell Design for Extremely
1
2
3
G
D
S
Low RDS(ON)
•
•
Reliable and Rugged
TO-252 Package
Top View of TO-252
D
Applications
•
Power Management in Computer, Portable
G
Equipment and Battery Powered Systems.
Ordering and Marking Information
APM2007N
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150 °C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM2007N U :
APM2007N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
S
N-Channel MOSFET
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±16
Unit
V
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
1
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APM2007
Absolute Maximum Ratings (Cont.)
Symbol
*
D
(TA = 25°C unless otherwise noted)
Parameter
Rating
I
Maximum Drain Current – Continuous
30
IDM
Maximum Drain Current – Pulsed
70
PD
Maximum Power Dissipation
TJ
Maximum Junction Temperature
TA=25°C
50
TA=100°C
10
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
Unit
A
W
150
°C
-55 to 150
°C
50
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol
Param eter
(TA = 25°C unless otherwise noted)
Test Condition
APM 2007N
Min.
Typ.
Max.
Unit
Static
BV D SS
Drain-Source Breakdown
Voltage
V GS =0V , ID S =250µA
IDSS
Zero G ate Voltage Drain
Current
V DS =18V , V GS =0V
V GS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
R DS(ON)
Drain-Source On-state
a
Resistance
V SD a
Diode Forward Voltage
V DS =V G S , ID S =250µA
20
1
V
1.5
1
µA
2
V
nA
±100
V GS =±16V , V DS =0V
V GS =10V , IDS =30A
6
7.5
V GS =4.5V , IDS =20A
8
9.5
V GS =2.5V , IDS =15A
16
18
I SD =4A , V G S =0V
0.7
1.3
V DS =10V , IDS = 5A
28
5.2
35
mΩ
V
b
Dynam ic
Qg
Total G ate Charge
Q gs
Gate-Source Charge
Q gd
td(ON)
Gate-Drain Charge
Turn-on Delay Time
Tr
Turn-on Rise Tim e
Turn-off Delay Tim e
td(OFF)
V GS =4.5V ,
V DD =10V , ID S =1A ,
V GEN =4.5V , R G =0.2Ω
Tf
C iss
Turn-off Fall Time
Input Capacitance
C oss
C rss
Output Capacitance
V DS =15V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
V GS =0V
nC
7.6
17
32
15
45
29
56
25
2293
32
570
390
ns
pF
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
2
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APM2007
Typical Characteristics
Output Characteristics
Transfer Characteristics
30
30
VGS=3,4,5,6,7,8,9,10V
25
ID-Drain Current (A)
ID-Drain Current (A)
25
20
15
10
VGS=2V
15
10
TJ=125°C
5
5
0
20
0
2
4
6
8
TJ=25°C
0
0.0
10
VDS - Drain-to-Source Voltage (V)
2.0
2.5
3.0
16
IDS=250uA
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
1.5
On-Resistance vs. Drain Current
1.25
1.00
0.75
0.50
0.25
0.00
-50
1.0
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
0.5
TJ=-55°C
14
12
10
VGS=4.5V
8
VGS=10V
6
4
2
-25
0
25
50
75
0
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
0
10
20
30
40
50
60
70
ID - Drain Current (A)
3
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APM2007
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.020
On-Resistance vs. Junction Temperature
1.8
ID=30A
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.002
0.000
VGS=4.5V
ID=20A
1.6
1
2
3
4
5
6
7
8
9
0.0
-50
10
VGS - Gate-to-Source Voltage (V)
-25
0
75
100 125 150
Capacitance
4000
VDS=10V
ID=5A
Frequency=1MHz
3500
4
Capacitance (pF)
VGS-Gate-Source Voltage (V)
50
TJ - Junction Temperature (°C)
Gate Charge
5
25
3
2
3000
Ciss
2500
2000
1500
1000
Coss
1
500
0
0
5
10
15
20
25
30
0
35
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
Crss
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
4
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APM2007
Typical Characteristics
Source-Drain Diode Forward Voltage
Single Pulse Power
30
250
200
1
Power (W)
IS-Source Current (A)
10
TJ=25°C
TJ=150°C
100
50
0.1
0.0
150
0.2
0.4
0.6
0.8
1.0
0
1E-3
1.2
0.01
0.1
VSD -Source-to-Drain Voltage (V)
1
10
100
1000
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
0.01
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
5
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APM2007
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E
A
b2
C1
L2
D
H
L1
L
b
C
e1
Dim
A
A1
Mi ll im et er s
Inc he s
Min .
Ma x .
Min .
Ma x .
2. 1 8
2. 3 9
0. 0 86
0. 0 94
A1
0. 8 9
1. 2 7
0. 0 35
0. 0 50
b
0. 5 08
0. 8 9
0. 0 20
0. 0 35
b2
5. 2 07
5. 4 61
0. 2 05
0. 2 15
C
0. 4 6
0. 5 8
0. 0 18
0. 0 23
C1
0. 4 6
0. 5 8
0. 0 18
0. 0 23
D
5. 3 34
6. 2 2
0. 2 10
0. 2 45
E
6. 3 5
6. 7 3
0. 2 50
0. 2 65
e1
3. 9 6
5. 1 8
0. 1 56
0. 2 04
H
9. 3 98
10 . 41
0. 3 70
0. 4 10
L
0. 5 1
L1
0. 6 4
1. 0 2
0. 0 25
0. 0 40
L2
0. 8 9
2. 0 32
0. 0 35
0. 0 80
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
0. 0 20
6
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APM2007
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
(IR/Convection or VPR Reflow)
temperature
Reflow Condition
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
7
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM2007
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
TO-252
A
B
C
J
330 ±3
100 ± 2
13 ± 0. 5
2 ± 0.5
F
D
D1
Po
7.5 ± 0.1
1.5 +0.1
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
T1
T2
16.4 + 0.3 2.5± 0.5
-0.2
P1
1.5± 0.25 4.0 ± 0.1
8
2.0 ± 0.1
Ao
W
16+ 0.3
- 0.1
P
E
8 ± 0.1
1.75± 0.1
Bo
Ko
t
2.5± 0.1
0.3±0.05
6.8 ± 0.1 10.4± 0.1
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APM2007
Cover Tape Dimensions
Application
TO- 252
Carrier Width
16
Cover Tape Width
13.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
9
www.anpec.com.tw
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