BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6 BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6 Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2006-04-20 Nominal Current Nennstrom Ø 12.75 Ø 11 ±0.1 28.5 min Rändel 0.8 knurl 0.8 Repetitive peak reverse voltage Periodische Spitzensperrspannung 5 ±0.2 10.7 ±0.2 1.3 25 A Ø 13±01 Dimensions - Maße [mm] 50 ... 600 V Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung Weight approx. Gewicht ca. 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Anode Cathode BYP25A05 BYP25K05 50 60 BYP25A1 BYP25K1 100 120 BYP25A2 BYP25K2 200 240 BYP25A3 BYP25K3 300 360 BYP25A4 BYP25K4 400 480 BYP25A6 BYP25K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C IFAV 25 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 90 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 270/300 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 375 A2s Tj TS -50...+215°C -50...+215°C Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 BYP25A05 ... BYP25A6, BYP25K05 ... BYP25K6 Characteristics Kennwerte Forward Voltage Durchlass-Spannung Tj = 25°C IF = 25 A VF < 1.1 V Leakage Current Sperrstrom Tj = 25°C VR = VRRM IR < 100 µA RthC < 1 K/W Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse 120 103 [%] [A] 100 Tj = 125°C 102 80 Tj = 25°C 10 60 40 1 20 IF IFAV 0 10-1 0 100 TC 50 150 200 [°C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. 270a-(25a-1,1v) 0.4 VF 0.8 1.0 1.4 1.2 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 3 10 [A] 2 10 îF 10 1 © Diotec Semiconductor AG 2 3 10 10 [n] 10 Peak forward surge current versus number of cycles at 50 Hz Durchlass-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz http://www.diotec.com/ 2