BCD AH9249 High sensitivity micropower omnipolar hall-effect switch Datasheet

Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
General Description
Features
The AH9249 is an ultra-sensitive Hall-effect switch
with digital latched output, mainly designed for
battery-operation, hand-held equipments.
•
•
•
Special CMOS process is used for low-voltage and
low-power requirement. A chopper stabilized
amplifier improves stability of magnetic switch
points. A sleep-awake logic controls the IC in sleep
time or awake time. This function will reduce the
average operating current of the IC. During the
awake time, the output is changed with the magnetic
flux density. During the sleep time, the output is
latched in its previous state and the current
consumption will reduce to some μA.
•
•
•
•
•
AH9249
Micropower Operation
2.5 to 5.5V Power Supply
Switching for Both Poles of a Magnet
(Omnipolar)
Stabilized Chopper
Superior Temperature Stability
Digital Output Signal
Built-in Pull-up Resistor
ESD Rating: 4000V (Human Body Model)
600V (Machine Model)
Applications
•
•
•
The IC switching behaviour is omnipolar, either north
or south pole sufficient strength will turn the output
on. If the magnetic flux density is larger than
operating point(BOP), the output will be turned on; if
it is less than releasing point(BRP), the output will be
turned off.
Cover Switch in Notebook PC/PDA
Handheld Wireless Application Awake Switch
Magnet Switch in Low Duty Cycle Applications
The AH9249 is available in TO-92S-3, SOT-23-3 and
DFN-2×2-3 packages which are optimized for most
applications.
TO-92S-3
SOT-23-3
DFN-2×2-3
Figure 1. Package Types of AH9249
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
1
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Pin Configuration
Z3 Package
(TO-92S-3)
N Package
(SOT-23-3)
3
OUTPUT
2
GND
1
VCC
GND
2
OUTPUT
1
VCC
3
(Front View)
(Top View)
DN Package
(DFN-2×2-3)
Pin 1 Dot
by Marking
VCC
1
3
OUTPUT
GND
2
Figure 2. Pin Configuration of AH9249
Pin Description
Pin Number
Pin Name
Function
TO-92S-3
SOT-23-3
DFN-2×2-3
1
1
1
VCC
Power supply pin
2
3
3
GND
Ground pin
3
2
2
OUTPUT
Output pin
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
2
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Functional Block Diagram
VCC
1 (1)
Sleep/Awake
Control
Timing
Logic
Bias
3 (2)
Hall
Plate
Chopper
Comparator
OUTPUT
2 (3)
GND
A (B)
A for TO-92S-3
B for SOT-23-3 and DFN-2×2-3
Figure 3. Functional Block Diagram of AH9249
Ordering Information
AH9249
Package
Circuit Type
G1: Green
Package
Z3: TO-92S-3
N: SOT-23-3
DN: DFN-2×2-3
Blank: Bulk
TR: Tape and Reel
Temperature Range
TO-92S-3
SOT-23-3
DFN-2×2-3
-
-40 to 85°C
Part Number
Marking ID
Packing Type
AH9249Z3-G1
9249
Bulk
AH9249NTR-G1
GJ9
Tape & Reel
AH9249DNTR-G1
JB
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
3
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Absolute Maximum Ratings (TA=25°C, Note 1)
Parameter
Symbol
Value
Unit
Supply Voltage
VCC
7
V
Supply Current (Fault)
ICC
6
mA
Output Voltage
VOUT
7
V
Output Current
IOUT
2
mA
Magnetic Flux Density
B
Unlimited
Gauss
Power Dissipation
PD
TO-92S-3
SOT-23-3
DFN-2×2-3
400
230
230
Storage Temperature
TSTG
-55 to 150
Junction Temperature
TJ
150
ESD (Human Body Model) (Note 2)
4000
ESD (Machine Model) (Note 2)
600
mW
°C
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe
Electro Static Discharge control procedures whenever handling semiconductor products.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.5
5.5
V
Operating Temperature
TOP
-40
85
°C
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
4
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Electrical Characteristics
VCC =3V, TA =25°C, unless otherwise specified.
Parameter
Supply Voltage
Supply Current
Symbol
Conditions
Min
Typ
Max
Unit
2.5
3
5.5
V
VCC
Operating
IAW
Awake
2
4
mA
ISL
Sleep
6
10
μA
IAVG
Average
10
15
μA
1.0
mA
1
μA
0.4
V
Output Current
IOUT
Output Leakage Current
ILEAK
B<︱BRP︱
Saturation Voltage
VSAT
IOUT =1.0mA
Awake Mode Time
tAW
Operating
150
Sleep Mode Time
tSL
Operating
90
Duty Cycle
D
0.15
%
Chopper Frequency
fC
15
kHz
<0.1
μs
120
ms
Magnetic Characteristics (Note 3)
VCC =3V, TA=25°C, unless otherwise specified.
Parameter
Symbol
BOPS
Operating Point
BOPN
BRPS
Releasing Point
BRPN
Hysteresis
BHYS
Conditions
South pole to branded side
B>BOPS,VOUT=low (output on)
North pole to branded side
B>BOPN,VOUT=low (output on)
South pole to branded side
B<BRPS,VOUT=high (output off)
North pole to branded side
B<BRPN,VOUT=high (output off)
︱BOPX - BRPX︱(Note 4)
Min
Typ
Max
Unit
30
55
Gauss
-55
-30
Gauss
5
20
Gauss
-20
10
-5
Gauss
Gauss
Note 3: The specifications stated here are guaranteed by design. 1 Gauss=0.1Mt.
Note 4: BOPX=operating point (output turns on); BRPX=releasing point (output turned off).
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
5
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Output Voltage
Magnetic Characteristics (Continued)
Figure 4. Output Voltage vs. Magnetic Flux Density
Test Conditions
Figure 5. Average Supply Current (Note 5, 6)
Note 5: ICC represents the average supply current. OUTPUT is open during measurement.
Note 6: The device is put under magnetic field with B<BRP.
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
6
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Test Conditions (Continued)
Figure 6. Output Saturation Voltage (Note 7, 8)
Note 7: The output saturation voltage VSAT is measured at VCC=2.5V and VCC=5.5V.
Note 8: The device is put under magnetic field with B>BOP.
Figure 7. Magnetic Thresholds (Note 9, 10)
Note 9: BOP is determined by putting the device under magnetic field swept from BRP(min) to BOP(max) until the
output is switched on.
Note 10: BRP is determined by putting the device under magnetic field swept from BOP(max) to BRP(min) until the
output is switched off.
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
7
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Typical Performance Characteristics
50
50
40
TA=25 C
30
30
20
20
10
BOP1
0
BOP2
-10
BRP1
BOP/BRP (GS)
BOP/BRP (GS)
40
o
-20
-30
-30
-40
-40
3.00
3.25
BRP1
-10
BRP2
2.75
BOP2
0
-20
-50
2.50
BOP1
10
BRP2
-50
-40
3.50
-30
-20
-10
0
10
20
30
40
50
60
70
80
O
TA ( C)
VCC (V)
Figure 8. BOP/BRP vs. Supply Voltage
Figure 9. BOP/BRP vs. Ambient Temperature
300
15
14
o
o
250
TA=25 C
TA=25 C
13
200
tAW (μs)
IAVG (μA)
12
11
10
150
100
9
8
50
7
6
2.50
2.75
3.00
3.25
0
2.50
3.50
3.00
3.25
3.50
VCC (V)
VCC (V)
Figure 10. Average Supply Current vs. Supply Voltage
Jul. 2011
2.75
Figure 11. Awake Mode Time vs. Supply Voltage
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
8
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Typical Performance Characteristics (Continued)
450
120
400
110
350
100
300
PD (mW)
tSL (ms)
TO-92S-3
SOT-23-3/DFN-2X2-3
o
TA=25 C
90
80
250
200
150
70
100
60
50
2.50
50
0
2.75
3.00
3.25
0
3.50
25
50
75
100
125
150
O
TA ( C)
VCC (V)
Figure 12. Sleep Mode Time vs. Supply Voltage
Jul. 2011
Figure 13. Power Dissipation vs. Ambient Temperature
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
9
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Typical Application
Figure 14. Typical Application Circuit of AH9249
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
10
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Mechanical Dimensions
TO-92S-3
44°
46°
Unit: mm(inch)
0.750(0.030)
TYP
1.420(0.056)
1.620(0.064)
3.850(0.152)
4.150(0.163)
1.050(0.041)
1.350(0.053)
1.850(0.073)
2.150(0.085)
Package Sensor Location
0.380(0.015)
0.550(0.022)
2.900(0.114)
3.310(0.130)
1.600(0.063)
TYP
14.000(0.551)
15.500(0.610)
0.360(0.014)
0.480(0.019)
1.270(0.050)
TYP
Jul. 2011
0.360(0.014)
0.510(0.020)
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
11
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Mechanical Dimensions (Continued)
SOT-23-3
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.100(0.004)
0.200(0.008)
0.300(0.012)
0.600(0.024)
2.650(0.104)
2.950(0.116)
1.500(0.059)
1.700(0.067)
1.45(0.057)
TYP
0.200(0.008)
0.900(0.035)
TYP
1.800(0.071)
2.000(0.079)
0
8
0.300(0.012)
0.500(0.020)
1.450(0.057)
MAX.
0.950(0.037)
TYP
°
°
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
Jul. 2011
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
12
Data Sheet
High Sensitivity Micropower Omnipolar Hall-Effect Switch
AH9249
Mechanical Dimensions (Continued)
DFN-2×2-3
Unit: mm(inch)
1.220(0.048)
1.420(0.056)
1.900(0.075)
2.100(0.083)
0.300(0.012)
0.500(0.020)
N3
Package Sensor Location
(For Hall IC)
1.900(0.075)
2.100(0.083)
0.780(0.031)
0.980(0.039)
Pin 1 Dot
by Marking
N2
0.850(0.033)
1.150(0.045)
0.990(0.039)
1.290(0.051)
0.650(0.026)
TYP
N1
0.200(0.008)
MIN.
0.700(0.028)
0.800(0.031)
0.180(0.007)
0.300(0.012)
Jul. 2011
0.000(0.000)
0.050(0.002)
0.203(0.008)
REF
Rev. 1. 6
BCD Semiconductor Manufacturing Limited
13
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