Diode Semiconductor Korea DF150M- - - DF1510M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A SILICON BRIDGE RECTIFIERS FEATURES DB-1 Rating to 1000V PRV Surge overload rating to 50 Amperes peak 1± 0.1 8.3± 0.3 6.3± 0.2 Reliable low cost construction utilizing molded 8.8± 0.5 Glass passivated chip junctions plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 8.3± 0.1 Lead: silver plated copper, solderde plated 94V-O 2.5± 0.15 Plastic material has UL flammability classification 5± 0.2 Polarity symbols molded on body Dimensions in millimeters Weight: 0.02 ounces,0.38 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. DF 150M DF 151M DF 152M DF DF 154M 156M DF DF UNITS 158M 1510M Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forw ard Output current @TA=40 IF(AV) 1.5 A IFSM 50 A VF 1.1 V 10.0 μA 0.5 mA Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 1.5 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =125 Operating junction temperature range Storage temperature range IR TJ - 55 ---- + 150 TSTG - 55 ---- + 150 www.diode.kr Diode Semiconductor Korea 1.5 1.0 0.5 0 0 25 50 75 100 125 150 FIG.2 -- MAXIMUM NON-REPETITIVE FORWARD SURGE VVVVVVVCURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERSE 2.0 AMPERSE PEAK FORWARD SURGE CURRENT, FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE DF150M - - - DF1510M 50 O 40 30 20 10 0 1 AMBIENT TEMPERATURE, 0 .1 T J= 1 2 5 P u ls e W id th =300u S 10 1.0 1 .0 1 .2 1 .4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TA=125 0.1 TA=25 .01 0 .8 100 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MICRO AMPERSE 1 .0 AMPERSE INSTANTANEOUS FORWARD CURRENT, 10 0 .6 10 NUMBER OF CYCLES AT 60HZ FIG.3 -- TYPICAL FORWARD CHARACTERISTIC .0 1 0 .4 TL =100 C 8.3ms Single Half Sine-Wave (JEDEC Method) 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr