DSK ER3GB Surface mount rectifier Datasheet

Diode Semiconductor Korea
ER3AB--- ER3JB
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 3.0 A
SURFACE MOUNT RECTIFIERS
FEATURES
DO - 214AA(SMB)
Low cost
4 . 5± 0.1 5
2.0± 0.15
3.5± 0.2
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
5 . 3± 0.2
MECHANICAL DATA
2.3± 0.15
Case:JEDEC DO-214AA,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
0.2± 0.05
1.25± 0.2
0.203MAX
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ER3AB ER3BB ER3CB ER3DB ER3EB ER3GB ER3JB UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
VRMS
35
70
105
140
210
280
420
V
Maximum DC blocking voltage
VDC
50
100
150
200
300
400
600
V
Maximum average forw ard rectified current
@TA=75
IF(AV)
3.0
A
IFSM
100
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=125
VF
IR
0.95
1.25
5.0
300
1.7
V
A
Maximum reverse recovery time (Note 1)
trr
35
ns
Typical junction capacitance
(Note 2)
CJ
95
pF
Typical thermal resistance
(Note 3)
RθJA
40
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
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Diode Semiconductor Korea
ER3AB --- ER3JB
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
t rr
10
N 1.
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
0
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
PULSE
GENERATOR
(NOTE2)
-0.25A
-1.0A
1cm
SET TIME BASE FOR 10 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
ER3EB ER3GB
ER3AB - ER3DB
3.0
ER3JB
2.0
T J =25
Pulse Width=300 µ s
1.0
0.4
0.8
1.2
1.6
2.0
2.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
4.0
CURRENT,AMPERES
INSTANTANEOUS FORWARD
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
1000
600
400
200
100
60
40
20
10
TJ=25
f=1.0MHz
0.1 0.2 0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
3.0
2.5
2.0
1.5
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead length
1.0
0.5
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT,AMPERES
JUNCTION CAPACITANCE,pF
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
z
120
100
8.3ms Single Half
Sine-Wave
80
60
40
20
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
CURRENT,MICROAMPERES
INSTANTANEOUS REVERSE
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
1000
TJ=100
100
10
TJ=75
1 .0
TJ=25
0 .1
0 .0 1
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE.
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