CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM2323PT CURRENT 4.1 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (1) 0.3~0.51 * P-Channel Enhancement 1.2~1.9 0.89~1.3 0.085~0.2 3 CIRCUIT 0~0.1 0.3~0.6 D 2.1~2.95 1 G Dimensions in millimeters 2S Absolute Maximum Ratings Symbol VDSS VGSS SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHM2323PT Units Drain-Source Voltage -30 V Gate-Source Voltage ± 20 V Maximum Drain Current - Continuous -4.1 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -16 1250 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 °C/W 2008-01 RATING CHARACTERISTIC CURVES ( CHM2323PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3.0 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance -1.0 VDS = VGS, ID =-250 µA VGS=-10V, ID=-4.1A 40 48 VGS=-4.5V, ID=-3.2A 60 80 VDS =-15V, ID = -4.1A 4 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 845 VDS = -15V, VGS = 0V, f = 1.0 MHz 155 pF 95 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge 13.8 VDS=-15V, ID=-4.1A 18.3 nC 1.8 VGS=-10V 2.2 t on Turn-On Time V DD= -15V 11 22 tr Rise Time I D = -10A , VGS = -10 V 4 8 t off Turn-Off Time RGEN= 6 Ω 59 118 tf Fall Time 23 46 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.7A , VGS = 0 V (Note 1) (Note 2) -4.1 A -1.2 V RATING CHARACTERISTIC CURVES ( CHM2323PT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 16 10 -VG S =1 0 , 8 , 6 , 4 V 8 -I D , DRAIN CURRENT (A) -I D , DRAIN CURRENT (A) 12 9 6 -VG S =3 . 0 V 3 6 4 TJ=125°C TJ=-55°C 2 TJ=25°C 0 0 0.4 0.8 1.2 1.6 -V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 2.0 0 5.0 6.0 VGS=-10V ID=-4.1A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 3 6 Qg , TOTAL GATE CHARGE (nC) 9 12 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE -VGS , GATE TO SOURCE VOLTAGE (V) 4.0 2.2 VDS=-15V ID=-4.1A THRESHOLD VOLTAGE 3.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge Vth , NORMALIZED GATE-SOURCE 2.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) 10 1.3 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200