CJ2306 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter 3. DRAIN MARKING: S6 Maximum ratings (at TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source voltage VDS 30 Gate-Source Voltage VGS ±20 ID 3.16 IDM 20 IS 0.62 PD 0.75 W RθJA 100 ℃/W a,b Continuous Drain Current (TJ=150℃) Pulsed Drain Current a,b Continuous Source Current(Diode Conduction) a,b Maximum Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction and Storage Temperature Range TJ, Tstg -55 to150 V A ℃ Notes : a. Surface Mounted on 1” ×1” FR4 board, t≤5s. b. Pulse width limited by maximum junction temperature. [email protected] www.zpsemi.com 1 of 2 CJ2306 Electrical characteristics (at TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DS VGS = 0V, ID =250µA 30 Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA 1.0 Gate-Body Leakage IGSS VDS =0V, VGS =±20V Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V Drain-Source On-Resistancea RDS(on) 3.0 ±100 nA 0.5 µA VGS =10V, ID =3.5A 0.038 0.047 VGS =4.5V, ID =2.8A 0.052 0.065 Forward Transconductancea gfs VDS =4.5V, ID =2.5A 7.0 Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.8 Gate Charge Qg VDS =15V,VGS =5V,ID =2.5A 3.0 Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss V Ω S 1.2 V Dynamic 6 VDS =15V,VGS =10V,ID =2.5A 4.5 9 1.6 nC 0.6 f =1.0MHz 2.5 5 7.5 Ω 305 VDS =15V,VGS =0V,f =1MHz pF 65 29 Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 7 11 12 18 14 25 6 10 ns Notes : a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. [email protected] www.zpsemi.com 2 of 2