500mA / 50V Digital transistors (with built-in resistors) DTD113ZK / DTD113ZU Applications Inverter, Interface, Driver Dimensions (Unit : mm) 2.9 DTD113ZK 1.1 0.4 (3) 1.6 2.8 Features 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors negative biasing of the input. They also have the advantage of almost completely eliminat ing parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. (2) 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 Each lead has same dimensions Abbreviated symbol: G21 DTD113ZU 2.0 2.1 1.25 ROHM : UMT3 EIAJ : SC-70 Taping Taping T146 T106 Basic ordering unit (pieces) 3000 3000 1.3 0.15 Each lead has same dimensions Abbreviated symbol: G21 0.1Min. (1) 0.65 0.65 SMT3 UMT3 Code 0.7 (3) (2) Part No. (1) GND (2) IN (3) OUT 0.9 0.2 0.3 Packaging specifications Packaging type 0.3Min. (1) 0.95 0.95 Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Package 0.8 (1) GND (2) IN (3) OUT − DTD113ZK − DTD113ZU Equivalent circuit OUT R1 IN R2 GND OUT IN GND R1=1.0kΩ, R2=10kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.05 - Rev.C DTD113ZK/DTD113ZU Data Sheet Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit DTD113ZU DTD113ZK Supply voltage Input voltage VCC 50 VIN −5 to +10 V Output current IC 500 mA Power dissipation PD 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C V Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.3 VI(on) 1.5 − − VO(on) − 0.1 0.3 V II − − 7.2 mA VI=5V IO(off) − − 0.5 μA VCC=50V, VI=0V VO=5V, IO=50mA Input voltage Output voltage Input current Output current Unit V DC current gain GI 82 − − − Input resistance R1 0.7 1 1.3 kΩ Resistance ratio R2/R1 8 10 12 − fT ∗ − 200 − MHz Transition frequency Conditions VCC=5V, IO=100μA VO=0.3V, IO=20mA IO/II=50mA/2.5mA − − VCE=10V, IE=−50mA, f=100MHz ∗ Characteristics of built-in transistor www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/3 2009.05 - Rev.C DTD113ZK/DTD113ZU Data Sheet Electrical characteristic curves 10m 100 VO=0.3V 1k VCC=5V 5m 500 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m 200m 100m 500μ 1m 2m DC CURRENT GAIN : GI OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 50 1m 50μ Ta=100 °C 25 °C −40 °C 200μ 100μ 50μ 20μ 10μ 5μ 2m 5m 10m 20m 50m 100m 200m 500m 0 Ta=100°C 25°C −40°C 100 50 20 10 5 2 2μ 1μ 200 VO=5V 0.5 1.0 1.5 2.0 2.5 3.0 1 500μ 1m 2m 5m 10m 20m 50m 100m200m 500m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig. 3 DC current gain vs. output current 1 lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 500μ 1m 2m 5m 10m 20m 50m100m200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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