Rohm DTD113ZK 500ma / 50v digital transistor Datasheet

500mA / 50V Digital transistors
(with built-in resistors)
DTD113ZK / DTD113ZU
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
2.9
DTD113ZK
1.1
0.4
(3)
1.6
2.8
 Features
1) Built-in bias resistors enable theconfiguration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors negative
biasing of the input. They also have the advantage of
almost completely eliminat ing parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
(2)
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Abbreviated symbol: G21
DTD113ZU
2.0
2.1
1.25
ROHM : UMT3
EIAJ : SC-70
Taping Taping
T146
T106
Basic ordering unit (pieces) 3000
3000
1.3
0.15
Each lead has same dimensions
Abbreviated symbol: G21
0.1Min.
(1)
0.65 0.65
SMT3 UMT3
Code
0.7
(3)
(2)
Part No.
(1) GND
(2) IN
(3) OUT
0.9
0.2
0.3
 Packaging specifications
Packaging type
0.3Min.
(1)
0.95 0.95
 Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Package
0.8
(1) GND
(2) IN
(3) OUT
−
DTD113ZK
−
DTD113ZU
 Equivalent circuit
OUT
R1
IN
R2
GND
OUT
IN
GND
R1=1.0kΩ, R2=10kΩ
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1/3
2009.05 - Rev.C
DTD113ZK/DTD113ZU
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
DTD113ZU DTD113ZK
Supply voltage
Input voltage
VCC
50
VIN
−5 to +10
V
Output current
IC
500
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
V
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
VI(off)
−
−
0.3
VI(on)
1.5
−
−
VO(on)
−
0.1
0.3
V
II
−
−
7.2
mA
VI=5V
IO(off)
−
−
0.5
μA
VCC=50V, VI=0V
VO=5V, IO=50mA
Input voltage
Output voltage
Input current
Output current
Unit
V
DC current gain
GI
82
−
−
−
Input resistance
R1
0.7
1
1.3
kΩ
Resistance ratio
R2/R1
8
10
12
−
fT ∗
−
200
−
MHz
Transition frequency
Conditions
VCC=5V, IO=100μA
VO=0.3V, IO=20mA
IO/II=50mA/2.5mA
−
−
VCE=10V, IE=−50mA, f=100MHz
∗ Characteristics of built-in transistor
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2009.05 - Rev.C
DTD113ZK/DTD113ZU
Data Sheet
 Electrical characteristic curves
10m
100
VO=0.3V
1k
VCC=5V
5m
500
20
10
5
Ta=−40°C
25°C
100°C
2
1
500m
200m
100m
500μ 1m
2m
DC CURRENT GAIN : GI
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
50
1m
50μ
Ta=100 °C
25 °C
−40 °C
200μ
100μ
50μ
20μ
10μ
5μ
2m
5m 10m 20m
50m 100m 200m 500m
0
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
2μ
1μ
200
VO=5V
0.5
1.0
1.5
2.0
2.5
3.0
1
500μ 1m
2m
5m 10m 20m 50m 100m200m 500m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig. 3 DC current gain vs. output current
1
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
500μ 1m
2m
5m 10m 20m
50m100m200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
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2009.05 - Rev.C
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