SEMICONDUCTOR BAV23S TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE High Voltage Switching. FEATURES ·High Reliability. E B L L 3 H G A 2 D ·Small surface mounting type (SOT-23). 1 MAXIMUM RATING (Ta=25℃) RATING UNIT VRM 300 V Reverse Voltage VR 250 V Continuous Forward Current IF 200 mA IFSM 2 A Surge Current (10mS) PD Power Dissipation Junction Temperature Storage Temperature Range P MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M K C Maximum (Peak) Reverse Voltage P J SYMBOL N CHARACTERISTIC DIM A 3 1. CATHODE 1 2. ANODE 2 225* mW 3. ANODE 1/ CATHODE 2 2 300** Tj 150 ℃ Tstg -55～150 ℃ 1 SOT-23 * Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm) Marking Type Name Lot No. JC ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT V VF IF=150mA - - 1.25 IR(1) VR=250V - - 0.2 IR(2) VR=300V - - 100 Total Capacitance CT VR=0V, f=1MHz - - 3 pF Reverse Recovery Time trr IR=30mA, IF=30mA - - 100 nS Forward Voltage Reverse Current 2009. 1. 23 Revision No : 1 μA 1/2 BAV23S I F - VF 100 Ta=25 C REVERSE CURRENT I R (nA) 10 5 FORWARD CURRENT I F (µA) IR - VR 10 4 10 3 10 2 10 1 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 1200 FORWARD VOLTAGE VF (mV) Ta=25 C 10 1 0.1 0 50 100 150 200 250 300 REVERSE VOLTAGE VR (V) TERMINAL CAPACITANCE C T (pF) C T - VR 1.5 f=1MHz Ta=25 C 1.4 1.3 1.2 1.1 1.0 0 10 20 30 REVERSE VOLTAGE VR (V) 2009. 1. 23 Revision No : 1 2/2