KEC BAV23S Silicon epitaxial planar diode Datasheet

SEMICONDUCTOR
BAV23S
TECHNICAL DATA
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching.
FEATURES
·High Reliability.
E
B
L
L
3
H
G
A
2
D
·Small surface mounting type (SOT-23).
1
MAXIMUM RATING (Ta=25℃)
RATING
UNIT
VRM
300
V
Reverse Voltage
VR
250
V
Continuous Forward Current
IF
200
mA
IFSM
2
A
Surge Current (10mS)
PD
Power Dissipation
Junction Temperature
Storage Temperature Range
P
MILLIMETERS
_ 0.20
2.93 +
B
C
1.30+0.20/-0.15
1.30 MAX
D
0.45+0.15/-0.05
E
G
2.40+0.30/-0.20
1.90
H
J
0.95
0.13+0.10/-0.05
K
0.00 ~ 0.10
L
0.55
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
M
K
C
Maximum (Peak) Reverse Voltage
P
J
SYMBOL
N
CHARACTERISTIC
DIM
A
3
1. CATHODE 1
2. ANODE 2
225*
mW
3. ANODE 1/ CATHODE 2
2
300**
Tj
150
℃
Tstg
-55~150
℃
1
SOT-23
* Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10×8×0.6mm)
Marking
Type Name
Lot No.
JC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VF
IF=150mA
-
-
1.25
IR(1)
VR=250V
-
-
0.2
IR(2)
VR=300V
-
-
100
Total Capacitance
CT
VR=0V, f=1MHz
-
-
3
pF
Reverse Recovery Time
trr
IR=30mA, IF=30mA
-
-
100
nS
Forward Voltage
Reverse Current
2009. 1. 23
Revision No : 1
μA
1/2
BAV23S
I F - VF
100
Ta=25 C
REVERSE CURRENT I R (nA)
10 5
FORWARD CURRENT I F (µA)
IR - VR
10 4
10 3
10 2
10
1
0.1
0.01
0.001
0.0001
0
200
400
600
800
1000
1200
FORWARD VOLTAGE VF (mV)
Ta=25 C
10
1
0.1
0
50
100
150
200
250
300
REVERSE VOLTAGE VR (V)
TERMINAL CAPACITANCE C T (pF)
C T - VR
1.5
f=1MHz
Ta=25 C
1.4
1.3
1.2
1.1
1.0
0
10
20
30
REVERSE VOLTAGE VR (V)
2009. 1. 23
Revision No : 1
2/2
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