AP40T03GS/P
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
30V
RDS(ON)
25mΩ
ID
G
▼ RoHS Compliant
BVDSS
28A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263
TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03J) are
(AP40T03GP)
are
available
available
forfor
low-profile
low-profile
applications.
applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±25
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
28
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
24
A
95
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200331053-1/4
AP40T03GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=18A
-
-
25
mΩ
VGS=4.5V, ID=14A
-
-
45
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=18A
-
15
-
S
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±25V
-
-
±100
nA
ID=18A
-
8.8
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VGS=0V, ID=250uA
Min.
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.8
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
62
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=0.83Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
655
-
pF
Coss
Output Capacitance
VDS=25V
-
145
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
-
-
28
A
-
-
95
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
1
Tj=25℃, IS=28A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40T03GS/P
90
75
10V
8 .0V
ID , Drain Current (A)
6 .0V
60
30
50
6 .0V
25
V G =4.0V
V G = 4. 0V
0
0
0.0
1.0
2.0
3.0
4.0
0.0
1.0
V DS , Drain-to-Source Voltage (V)
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
70
I D =18A
V G =10V
Normalized RDS(ON)
I D =14A
T C =25 ℃
50
RDS(ON) (mΩ)
10V
8 .0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
30
1.4
0.8
0.2
10
0
5
10
-50
15
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
100
2.0
10
T j =25 o C
IS(A)
VGS(th) (V)
T j =150 o C
1.5
1
1.0
0.1
0.5
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40T03GS/P
f=1.0MHz
12
1000
9
C iss
V DS =10V
V DS =15V
V DS =20V
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
6
C oss
C rss
100
3
10
0
0
3
6
9
1
12
8
15
22
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
ID (A)
Duty factor = 0.5
100us
10
1ms
o
T C =25 C
Single Pulse
10ms
100ms
DC
1
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4